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PDF NTTFS4H05N Data sheet ( Hoja de datos )
| Número de pieza | NTTFS4H05N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTTFS4H05N
Power MOSFET
25 V, 94 A, Single N−Channel, m8−FL
Features
• Optimized Design to Minimize Conduction and Switching Losses
• Optimized Package to Minimize Parasitic Inductances
• Optimized material for improved thermal performance
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Performance DC-DC Converters
• System Voltage Rails
• Netcom, Telecom
• Servers & Point of Load
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current RqJA
(TA = 25°C, Note 1)
Power Dissipation RqJA
(TA = 25°C, Note 1)
Continuous Drain Current RqJC
(TC = 25°C, Note 1)
Power Dissipation RqJC
(TC = 25°C, Note 1)
Pulsed Drain Current (tp = 10 ms)
Single Pulse Drain-to-Source Avalanche
Energy (Note 1)
(IL = 41 Apk, L = 0.1 mH) (Note 3)
Drain to Source dV/dt
VDSS
VGS
ID
PD
ID
PD
IDM
EAS
25
±20
22.4
2.66
94
46.3
304
84
V
V
A
W
A
W
A
mJ
dV/dt
7 V/ns
Maximum Junction Temperature
Storage Temperature Range
TJ(max)
TSTG
150
−55 to
150
°C
°C
Lead Temperature Soldering Reflow (SMD TSLD 260 °C
Styles Only), Pb-Free Versions (Note 2)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness
and FR4 PCB substrate.
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C,
VGS = 10 V, IL = 27 A, EAS = 36 mJ.
THERMALCHARACTERISTICS
Parameter
Symbol Max Units
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)
RqJA
RqJC
47
2.7
4. Thermal Resistance RqJA and RqJC as defined in JESD51−3.
°C/W
www.onsemi.com
VGS
4.5 V
10 V
MAX RDS(on)
4.8 mW
3.3 mW
TYP QGTOT
8.7 nC
18.9 nC
PIN CONNECTIONS
m8−FL (3.3 x 3.3 mm)
(Top View)
(Bottom View)
N−CHANNEL MOSFET
D (5−8)
G (4)
S (1,2,3)
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 3
1
Publication Order Number:
NTTFS4H05N/D
1 page  
NTTFS4H05N
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
20%
10 10%
5%
2%
1 1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Characteristics
1
PCB Cu Area 650 mm2
PCB Cu thk 1 oz
10 100 1000
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140
ID (A)
Figure 14. GFS vs. ID
1E+03
1E+02
1E+01
1E+00
1E−07
1E−06
1E−05
1E−04 1E−03
PULSE WIDTH (sec)
Figure 15. Avalanche Characteristics
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