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NCP339 PDF даташит

Спецификация NCP339 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «3A Ultra-Small Controlled Load Switch».

Детали детали

Номер произв NCP339
Описание 3A Ultra-Small Controlled Load Switch
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NCP339 Даташит, Описание, Даташиты
NCP339
3 A Ultra-Small Controlled
Load Switch with
Auto-Discharge Path and
Reverse Current Control
The NCP339 is a very low Ron MOSFET controlled by external
logic pin, allowing optimization of battery life, and portable device
autonomy.
Indeed, due to a current consumption optimization with PMOS
structure, leakage currents are eliminated by isolating connected IC on
the battery when not used.
Reverse blocking control is automatically engage if OUT pin
voltage is higher than IN pin voltage, eliminate leakages current from
OUT to IN.
Proposed in a wide input voltage range from 1.2 V to 5.5 V, in a
small 1 x 1.5 mm WLCSP6, pitch 0.5 mm.
Features
1.2 V 5.5 V Operating Range
19 mW P MOSFET at 4.5 V
DC Current up to 3 A
Soft Start Control
Low Quiescent Current
Reverse Blocking
Active High EN pin
WLCSP6 1 x 1.5 mm
This is a PbFree Device
Typical Applications
Mobile Phones
Tablets
Digital Cameras
GPS
Portable Devices
Computers
http://onsemi.com
WLCSP6, 1.00x1.50
CASE 567FH
MARKING DIAGRAM
XX
AYWG
G
XX = NP or DP
A = Assembly Location
Y = Year
W = Work Week
G = PbFree Package
(*Note: Microdot may be in either location)
PACKAGE PINOUT DIAGRAM
12
A OUT IN
B OUT IN
C GND EN
(Top View)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
November, 2013 Rev. 2
1
Publication Order Number:
NCP339/D









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NCP339 Даташит, Описание, Даташиты
VCC
SMPS
V+
DCDC Converter
or LDO
ENx
NCP339
LS
1 mF
NCP339
A2
B2
C2
ENy
IN OUT
IN OUT
EN
A1
B1
100n
0
Platform IC’n
LS Platform IC’n+1
Figure 1. Typical Application Circuit
Table 1. PIN FUNCTION DESCRIPTION
Pin Name Pin Number
Type
Description
IN
A2, B2
POWER Load-switch input voltage; connect a 1 mF or greater ceramic capacitor from IN to GND
as close as possible to the IC.
GND
C1 POWER Ground connection.
EN
C2
INPUT
Enable input, logic high turns on power switch.
OUT
A1, B1
OUTPUT
Load-switch output; connect a 100 nF ceramic capacitor from OUT to GND as close as
possible to the IC is recommended.
IN: pin A2, B2
EN: C2
Control
logic
Gate driver and soft
start control
EN block
7M
Optional
OUT: pin A1, B1
GND: C1
Figure 2. Block Diagram
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NCP339 Даташит, Описание, Даташиты
NCP339
Table 2. MAXIMUM RATINGS
Rating
Symbol
Value
Unit
IN, OUT, EN, Pins: (Note 1)
From IN to OUT Pins: Input/Output (Note 1)
Human Body Model (HBM) ESD Rating are (Note 1 and 2)
VEN, VIN, VOUT
VIN, VOUT
ESD HBM
-0.3 to +7.0
-7.0 to +7.0
4000
V
V
V
Machine Model (MM) ESD Rating are (Note 1 and 2)
ESD MM
250 V
Latch-up protection (Note 3)
Pins IN, OUT, EN
LU 100 mA
Maximum Junction Temperature
TJ
-40 to +125
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Moisture Sensitivity (Note 4)
MSL
Level 1
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. OPERATING CONDITIONS
Symbol
Parameter
Conditions
Min Typ Max Unit
VIN Operational Power Supply
1.2 5.5 V
VEN Enable Voltage
0 5.5
TA Ambient Temperature Range
-40 25 +85 °C
TJ Junction Temperature Range
-40 25 +125 °C
CIN Decoupling input capacitor
1 mF
COUT
Decoupling output capacitor
100 nF
RqJA
Thermal Resistance Junction to Air
WLCSP package (Note 3)
100 °C/W
IOUT
Maximum DC current
3A
PD Power Dissipation Rating (Note 4)
TA 25 °C
WLCSP package
1W
TA = 85 °C
WLCSP package
0.4 W
1. According to JEDEC standard JESD22-A108.
2. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J-STD-020.
3.
4.
The
The
mRqaJxAimisudmeppeonwdeerndtisosf itphaetioPnC(BPDh)eiast
dissipation and thermal via.
given by the following formula:
PD
+
TJMAX*TA
RqJA
http://onsemi.com
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