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NIS5452MT2TXG PDF даташит

Спецификация NIS5452MT2TXG изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «+5 Volt Electronic Fuse».

Детали детали

Номер произв NIS5452MT2TXG
Описание +5 Volt Electronic Fuse
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NIS5452MT2TXG Даташит, Описание, Даташиты
NIS5452 Series
+5 Volt Electronic Fuse
The NIS5452 series is a cost effective, resettable fuse which can
greatly enhance the reliability of a hard drive or other circuit from both
catastrophic and shutdown failures.
It is designed to buffer the load device from excessive input voltage
which can damage sensitive circuits. It also includes an overvoltage
clamp circuit that limits the output voltage during transients but does
not shut the unit down, thereby allowing the load circuit to continue
operation. Two thermal options are available, latching and auto−retry.
Features
Integrated Power Device
Power Device Thermally Protected
No External Current Shunt Required
40 mW Typical
Internal Charge Pump
Internal Undervoltage Lockout Circuit
Internal Overvoltage Clamp
ESD Ratings: Human Body Model (HBM); 2000 V
Machine Model (MM); 200 V
These are Pb−Free Devices and are RoHS Compliant
Typical Applications
Mother Board
Hard Drives
Fan Drives
www.onsemi.com
4.5 AMP, 5 VOLT
ELECTRONIC FUSE
WDFN10
CASE 522AA
MARKING DIAGRAM
1
XXX
AYWG
G
Pin
1−5
6
7
8
9
10
11 (flag)
Function
SOURCE
NC
ILIMIT
Enable/Fault
dv/dt
GND
VCC
XXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Features
Marking
Package
Shipping
NIS5452MT1TXG
Thermal Latching
Vclamp = 5.85 V, ILIM = 2.1 A @ 18 W
52
WDFN10
(Pb−Free)
3000 / Tape & Reel
NIS5452MT2TXG
Thermal Auto−Retry
Vclamp = 5.85 V, ILIM = 2.1 A @ 18 W
52H
WDFN10
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
June, 2015 − Rev. 0
1
Publication Order Number:
NIS5452/D









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NIS5452MT2TXG Даташит, Описание, Даташиты
ENABLE/
FAULT
Enable
Thermal
Shutdown
NIS5452 Series
VCC
Charge
Pump
Current
Limit
SOURCE
ILIMIT
UVLO
Voltage
Clamp
dv/dt
Control
dv/dt
Figure 1. Block Diagram
Table 1. FUNCTIONAL PIN DESCRIPTION
GND
Pin Function
Description
1−5
Source
This pin is the source of the internal power FET and the output terminal of the fuse.
7
ILimit
A resistor between this pin and the source pin sets the overload and short circuit current limit
levels.
8 Enable/Fault The enable/fault pin is a tri−state, bidirectional interface. It can be used to enable or disable the
output of the device by pulling it to ground using an open drain or open collector device. If a ther-
mal fault occurs, the voltage on this pin will go to an intermediate state to signal a monitoring cir-
cuit that the device is in thermal shutdown. It can also be connected to another device in this fami-
ly to cause a simultaneous shutdown during thermal events.
9
dv/dt
The internal dv/dt circuit controls the slew rate of the output voltage at turn on. It has an internal
capacitor that allows it to ramp up over a period of 1.4 ms. An external capacitor can be added to
this pin to increase the ramp time. If an additional time delay is not required, this pin should be left
open.
10
Ground
Negative input voltage to the device. This is used as the internal reference for the IC.
11 (belly pad)
VCC Positive input voltage to the device.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Voltage, operating, steady−state (VCC to GND, Note 1)
Thermal Resistance, Junction−to−Air
0.1 in2 copper (Note 2)
0.5 in2 copper (Note 2)
VIN
−0.6 to 14
V
qJA °C/W
227
95
Thermal Resistance, Junction−to−Lead (Pin 1)
Thermal Resistance, Junction−to−Case
Total Power Dissipation @ TA = 25°C
Derate above 25°C
qJL
qJC
Pmax
27 °C/W
20 °C/W
1.3 W
10.4 mW/°C
Operating Temperature Range (Note 3)
TJ
−40 to 150
°C
Nonoperating Temperature Range
TJ
−55 to 155
°C
Lead Temperature, Soldering (10 Sec)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Negative voltage will not damage device provided that the power dissipation is limited to the rated allowable power for the device.
2. 1 oz copper, double−sided FR4.
3. Thermal limit is set above the maximum thermal rating. It is not recommended to operate this device at temperatures greater than the
maximum ratings for extended periods of time.
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NIS5452MT2TXG Даташит, Описание, Даташиты
NIS5452 Series
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted: VCC = 5.0 V, Cin = 2.2 mF, CL = 70 mF, dv/dt pin open, TA = 25°C unless otherwise noted.)
Characteristics
Symbol
Min
Typ
Max
Unit
POWER FET
Delay Time (enabling of chip to ID = 100 mA with 1 A resistive load)
ON Resistance (Note 4)
TJ = 140°C (Note 5)
Off State Output Voltage
(VCC = 10 Vdc, VGS = 0 Vdc, RL = 100 kW)
Output Capacitance
(VDS = 5 VDC, VGS = 0 VDC, RL = R)
Continuous Current (TA = 25°C, 0.5 in2 pad) (Note 5)
(TA = 80°C, minimum copper)
THERMAL LATCH
Tdly
RDS(on)
Voff
Cout
ID
ID
19
200 ms
40 50 mW
60
50 200 mV
230 pF
4.5 A
1.7
Shutdown Temperature (Note 5)
TSD 150 175 200 °C
Thermal Hysteresis (Decrease in die temperature for turn on, does not
apply to latching parts)
THyst
45 °C
UNDER/OVERVOLTAGE PROTECTION
VOUT Maximum (VCC = 10 V)
Undervoltage Lockout (Turn on, Voltage Going High)
UVLO Hysteresis
CURRENT LIMIT
NIS5452
Vout−clamp
VUVLO
VHyst
5.0
1.9
0.055
5.85
2.5
0.1
8.05
2.8
0.250
V
V
V
Kelvin Short Circuit Current Limit (Note 6) NIS5452 (RLimit = 18 W)
ILIM
1.0
2.1
3.6 A
Overload Current Limit (Note 6)
NIS5452 (RLimit = 18 W)
ILIM
2.7 A
dv/dt CIRCUIT
Output Voltage Ramp Time (Enable to VOUT = 4.7 V)
Maximum Capacitor Voltage
ENABLE/FAULT
tslew
0.37
1.4
3.0 ms
Vmax
VCC
V
Logic Level Low (Output Disabled)
Vin−low
0.35
0.58
0.81
V
Logic Level Mid (Thermal Fault, Output Disabled)
Vin−mid
0.82
1.4
1.95 V
Logic Level High (Output Enabled)
Vin−high
1.96
2.2
2.5 V
High State Maximum Voltage
Vin−max
2.51
3.3
5.2 V
Logic Low Sink Current (Venable = 0 V)
Iin−low
−12 −20 mA
Logic High Leakage Current for External Switch (Venable = 3.3 V)
Iin−leak
1.0 mA
Maximum Fanout for Fault Signal (Total number of chips that can be
connected to this pin for simultaneous shutdown)
Fan
3.0 Units
TOTAL DEVICE
Bias Current (Operational)
IBias 400 750 mA
Bias Current (Shutdown)
IBias
100 mA
Minimum Operating Voltage (Notes 5 and 7)
Vmin
2.8 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse test: Pulse width 300 ms, duty cycle 2%.
5. Verified by design.
6. Refer to explanation of short circuit and overload conditions in application note AND8140/D.
7. Device will shut down prior to reaching this level based on actual UVLO trip point.
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NIS5452MT2TXG+5 Volt Electronic FuseON Semiconductor
ON Semiconductor

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