DataSheet26.com

даташит BFL4007 PDF ( Datasheet )

BFL4007 Datasheet Download - Sanyo

Номер произв BFL4007
Описание N-Channel Silicon MOSFET
Производители Sanyo
логотип Sanyo логотип 



1Page
		

No Preview Available !

BFL4007 Даташит, Описание, Даташиты
Ordering number : ENA1689
BFL4007
SANYO Semiconductors
DATA SHEET
BFL4007
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Reverse recovery time trr=95ns (typ)
Input capacitance Ciss=1200pF (typ)
ON-resistance RDS(on)=0.52Ω (typ)
10V drive
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VDSS
VGSS
IDc*1
IDpack*2
IDP
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
PW10μs, duty cycle1%
600 V
±30 V
14 A
8.7 A
49 A
Source-to-Drain Diode Forward Current (DC) IS
Source-to-Drain Diode Forward Current (Pulse) ISP
Allowable Power Dissipation
PD
PW10μs, duty cycle1%
Tc=25°C (SANYO’s ideal heat dissipation condition*)3
14 A
49 A
2.0 W
40 W
Note :*1 Shows chip capability
*2 Package limited
*3 SANYO’s condition is radiation from backside.
Continued on next page.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
Package Dimensions
unit : mm (typ)
7509-002
10.0
3.2
4.5
2.8
Product & Package Information
• Package
: TO-220FI(LS)
• JEITA, JEDEC
: SC-67, SOT-186A, TO-220F
• Minimum Packing Quantity : 100/bag, 50/magazine
Marking
0.9
1.2
0.75
123
2.55 2.55
1.2
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
FL4007
LOT No.
http://semicon.sanyo.com/en/network
60210QB TK IM TC-00002337 No. A1689-1/5







No Preview Available !

BFL4007 Даташит, Описание, Даташиты
BFL4007
Continued from preceding page.
Parameter
Symbol
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
EAS
IAV
Note :*4 VDD=99V, L=5mH, IAV=8.5A (Fig.1)
*5 L5mH, single pulse
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
ID=10mA, VGS=0V
VDS=480V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=7A
ID=7A, VGS=10V
VDS=30V, f=1MHz
VDS=30V, f=1MHz
VDS=30V, f=1MHz
See Fig.2
See Fig.2
See Fig.2
See Fig.2
VDS=200V, VGS=10V, ID=14A
VDS=200V, VGS=10V, ID=14A
VDS=200V, VGS=10V, ID=14A
IS=14A, VGS=0V
See Fig.3
IS=14A, VGS=0V, di/dt=100A/μs
Ratings
150
--55 to +150
215
8.5
Unit
°C
°C
mJ
A
min
600
Ratings
typ
3
4.3 8.5
0.52
1200
220
43
27
72
122
48
46
8.6
26.4
1.1
95
250
max
100
±100
5
0.68
1.5
Unit
V
μA
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
50Ω
RG G
D
L
VIN
10V
0V
VIN
VDD=200V
ID=7A
RL=28.6Ω
S BFL4007
10V
0V
50Ω
VDD
PW=10μs
D.C.0.5%
G
D
VOUT
BFL4007
P.G RGS=50Ω S
No. A1689-2/5







No Preview Available !

BFL4007 Даташит, Описание, Даташиты
BFL4007
Fig.3 trr Reverse Recovery Resistance Test Circuit
D
BFL4007
G 500μH
S
VDD=50V
Driver MOSFET
35
Tc=25°C
30 VGS=20V
25
ID -- VDS
10V 15V
8V
20
15
10
6V
5
VGS=5V
0
0 5 10 15 20 25 30
2.0
Drain-to-Source
RDS(on)
Vo--ltagVeG, VSDS
--
V
IT15477
ID=7A
1.8
1.6
1.4
1.2
1.0
0.8 Tc=75°C
0.6 25°C
0.4 --25°C
0.2
0
3 5 7 9 11 13 15
3
Gate-to-Source
| yfs
V| ol-t-ageID, VGS
--
V
IT15479
2 VDS=10V
10 25°C
7
5
3
Tc=
--25°C
75°C
2
1.0
7
5
3
0.1
2 3 5 7 1.0
2 3 5 7 10
Drain Current, ID -- A
23 5
IT15481
40
VDS=20V
35
ID -- VGS
Tc= --25°C
30
25°C
25
75°C
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
1.6
Gate-to-Source Voltage,
RDS(on) --
VTcGS
--
V
IT15478
1.4
1.2
1.0
0.8
0.6
V GS=10V, I D=7A
0.4
0.2
0
--50
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IS -- VSD
IT15480
VGS=0V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Diode Forward Voltage, VSD -- V IT15482
No. A1689-3/5










Всего страниц 5 Pages
Скачать PDF[ BFL4007.PDF Даташит ]

Ссылка Поделиться


Related Datasheets

Номер в каталогеОписаниеПроизводители
BFL4001N-Channel Silicon MOSFETSanyo
Sanyo
BFL4001N-Channel Power MOSFETON Semiconductor
ON Semiconductor
BFL4004N-Channel Silicon MOSFETSanyo
Sanyo
BFL4004N-Channel Power MOSFETON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
6MBP200RA-060

Intelligent Power Module

Fuji Electric
Fuji Electric
ADF41020

18 GHz Microwave PLL Synthesizer

Analog Devices
Analog Devices
AN-SY6280

Low Loss Power Distribution Switch

Silergy
Silergy

DataSheet26.com    |    2020    |   Контакты    |    Поиск