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BFL4026 Datasheet Download - Sanyo

Номер произв BFL4026
Описание N-Channel Silicon MOSFET
Производители Sanyo
логотип Sanyo логотип 



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BFL4026 Даташит, Описание, Даташиты
Ordering number : ENA1797A
BFL4026
SANYO Semiconductors
DATA SHEET
BFL4026
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
ON-resistance RDS(on)=2.8Ω (typ.)
10V drive
Input capacitance Ciss=650pF (typ.)
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
900 V
Gate-to-Source Voltage
VGSS
±30 V
Drain Current (DC)
IDc*1
IDpack*2
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
5A
3.5 A
Drain Current (Pulse)
IDP PW10μs, duty cycle1%
10 A
Allowable Power Dissipation
PD Tc=25°C (SANYO’s ideal heat dissipation condition)*3
2.0 W
35 W
Channel Temperature
Tch
150 °C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
132 mJ
Avalanche Current *5
IAV
5A
Note :*1 Shows chip capability
*2 Package limited
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=10mH, IAV=5A (Fig.1)
*5 L10mH, single pulse
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
4.7
2.54
BFL4026-1E
Product & Package Information
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
1.47 MAX
0.8
123
2.54 2.54
2.76
0.5 1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3FS
FL4026
LOT No.
1
3
http://semicon.sanyo.com/en/network
71112 TKIM/70710QB TKIM TC-00002399 No.A1797-1/7







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BFL4026 Даташит, Описание, Даташиты
BFL4026
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
ID=10mA, VGS=0V
VDS=720V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=20V, ID=2.5A
ID=2.5A, VGS=10V
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=5A
IS=5A, VGS=0V
See Fig.3
IS=5A, VGS=0V, di/dt=100A/μs
min
900
Ratings
typ
2.0
1.4 2.8
2.8
650
100
35
14
37
117
39
33
5.3
16.5
0.85
720
4700
max
1.0
±100
4.0
3.6
1.2
Unit
V
mA
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Fig.1 Avalanche Resistance Test Circuit
50Ω
RG G
D
L
S BFL4026
10V
0V
50Ω
VDD
Fig.2 Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.0.5%
G
VDD=200V
ID=2.5A
RL=80Ω
D VOUT
BFL4026
P.G RGS=50Ω S
Fig.3 Reverse Recovery Time Test Circuit
BFL4026 D
G
S
500μH
VDD=50V
Driver MOSFET
Ordering Information
Device
BFL4026-1E
Package
TO-220F-3FS
Shipping
50pcs./magazine
memo
Pb Free
No.A1797-2/7







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BFL4026 Даташит, Описание, Даташиты
BFL4026
ID -- VDS
10
Tc=25°C
9
8 15V
7 10V
7V
6
5 6V
4
3
2
5V
1
0 VGS=4V
0 5 10 15 20 25 30 35 40 45 50
9
Drain-to-Source
RDS(on)
Vo--ltagVeG, VSDS
--
V
IT15761
ID=2.5A
8 Single pulse
7
6
5
Tc=75°C
4
3 25°C
2 --25°C
1
0
2 3 4 5 6 7 8 9 10 11 12 13 14 15
Gate-to-Source
| yfs
V| o-l-tagIeD, VGS
--
V
7
5 VDS=20V
IT15763
3 25°C
2
1.0
7
Tc=
--25°C
75°C
5
3
2
0.1
7
5
3
0.01 2 3 5 7 0.1
2 3 5 7 1.0
2 3 5 7 10
7
Drain Current,
SW Time
I-D-
-- A
ID
IT15765
5
VDD=200V
VGS=10V
3
2 td(off)
100
7
5 tf
3
2 tr td(on)
10
7
0.1
23
5 7 1.0
23
Drain Current, ID -- A
5 7 10
IT15767
ID -- VGS
8
VDS=20V
7
Tc= --25°C
6
25°C
5
75°C
4
3
2
1
0
0 2 4 6 8 10 12
10
Gate-to-Source Voltage,
RDS(on) --
VTcGS
--
V
IT15762
Single pulse
9
8
7
6
5
4
V GS=10V, I D=2.5A
3
2
1
0
--50 --25
0
25 50 75 100
Case Temperature, Tc -- °C
IS -- VSD
2
10
7
VGS=0V
Single pulse
5
3
2
125 150
IT15764
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
5
3
2
0.4 0.6 0.8 1.0 1.2
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-D
-- V
VDS
IT15766
f=1MHz
1000
7
5
3
2
100
7
5
3
2
10
0
Ciss
Coss
Crss
5 10 15 20 25 30 35 40 45 50
Drain-to-Source Voltage, VDS -- V IT15768
No.A1797-3/7










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