ZXMP3A17E6 PDF даташит
Спецификация ZXMP3A17E6 изготовлена «Zetex Semiconductors» и имеет функцию, называемую «30V P-CHANNEL ENHANCEMENT MODE MOSFET». |
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Детали детали
Номер произв | ZXMP3A17E6 |
Описание | 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
Производители | Zetex Semiconductors |
логотип |
7 Pages
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30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP3A17E6
SUMMARY
V(BR)DSS = -30V; RDS(ON) = 0.07 ID = -4.0A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23-6 package
SOT23-6
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
ZXMP3A17E6TA
ZXMP3A17E6TC
REEL
SIZE
7”
13”
TAPE QUANTITY
WIDTH PER REEL
8mm 3000 units
8mm 10000 units
PINOUT
DEVICE MARKING
• 317
Top View
PROVISIONAL ISSUE C - AUGUST 2002
1
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ZXMP3A17E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj:Tstg
LIMIT
-30
20
-4.0
-3.2
-3.2
-14.4
-2.5
-14.4
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
Junction to Ambient (b)
RθJA
RθJA
113 °C/W
73 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
PROVISIONAL ISSUE C - AUGUST 2002
2
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CHARACTERISTICS
ZXMP3A17E6
10
R
DS(ON)
Limited
1 DC
1s
100m
100ms 10ms
1ms
100us
10m Single Pulse, T =25°C
amb
0.1 1 10
-VDS Drain-Source Voltage (V)
P-channel Safe Operating Area
1.2
1.0
0.8
0.6
0.4
0.2
0.00 25 50 75 100 125 150
Temperature (°C)
Derating Curve
100
80
D=0.5
60
40
D=0.2
20
Single Pulse
D=0.05
D=0.1
1000µ 1m 10m 100m 1 10 100
Pulse Width (s)
Transient Thermal Impedance
1k
100 Single Pulse
T =25°C
amb
10
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
PROVISIONAL ISSUE C - AUGUST 2002
3
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Номер в каталоге | Описание | Производители |
ZXMP3A17E6 | 30V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex Semiconductors |
ZXMP3A17E6TA | 30V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex Semiconductors |
ZXMP3A17E6TC | 30V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex Semiconductors |
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