NP20P06SLG Datasheet PDF - Renesas
| Part Number | NP20P06SLG | |
| Description | MOS FIELD EFFECT TRANSISTOR | |
| Manufacturers | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP20P06SLG
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP20P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP20P06SLG-E1-AY Note
NP20P06SLG-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-252 (MP-3ZK)
FEATURES
• Super low on-state resistance
RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −10 A)
RDS(on)2 = 64 mΩ MAX. (VGS = −4.5 V, ID = −10 A)
• Low input capacitance
Ciss = 1650 pF TYP.
• Built-in gate protection diode
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
−60
m20
m20
m60
38
1.2
175
−55 to +175
17
28
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
3.9
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19076EJ1V0DS00 (1st edition)
Date Published December 2007 NS
Printed in Japan
2007
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NP20P06SLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
80
VGS = −4.5 V
60
40 −10 V
20
0
-75
ID = −10 A
Pulsed
-25 25 75 125 175
Tch - Channel Temperature - °C
225
1000
SWITCHING CHARACTERISTICS
100
td(off)
tf
10
VDD = −30 V
VGS = −10 V
RG = 0 Ω
1
-0.1 -1
tr
td(on)
-10
ID - Drain Current - A
-100
-100
-10
-1
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VGS = −10 V
0V
-0.1
-0.01
0
Pulsed
0.5 1
VF(S-D) - Source to Drain Voltage - V
1.5
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
Coss
100
Crss
VGS = 0 V
f = 1 MHz
10
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-60 -12
-50 VDD = −48 V
−30 V
-40 −12 V
-10
-8
-30 -6
VGS
-20 -4
-10
0
0
VDS
10 20
ID = −20 A
30
-2
0
40
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = −100 A/μs
VGS = 0 V
1
-0.1 -1
-10
IF - Diode Forward Current - A
-100
Data Sheet D19076EJ1V0DS
5
Preview 5 Page |
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| Information | Total 6 Pages | |
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