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PDF NP23N06YDG Data sheet ( Hoja de datos )
| Número de pieza | NP23N06YDG | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
| Logotipo |  |
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NP23N06YDG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0014EJ0100
Rev.1.00
Jul 01, 2010
Description
The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A)
• Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V)
• Logic level drive type
• Designed for automotive application and AEC-Q101 qualified
• Small size package 8-pin HSON
Ordering Information
Part No.
NP23N06YDG -E1-AY ∗1
NP23N06YDG -E2-AY ∗1
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
8-pin HSON, Taping (E1 type)
8-pin HSON, Taping (E2 type)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) ∗2
Channel Temperature
Storage Temperature
Repetitive Avalanche Current ∗3
Repetitive Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
60
±20
±23
±46
60
1.0
175
−55 to +175
11
12
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Rth(ch-C) 2.5 °C/W
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
150
°C/W
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
*3. Tch(peak) ≤ 150°C, RG = 25 Ω
R07DS0014EJ0100 Rev.1.00
Jul 01, 2010
Page 1 of 6
1 page  
NP23N06YDG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
ID = 11.5 A
70 Pulsed
60
50
40
VGS = 5 V
30 10 V
20
10
0
-100 0 100 200
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
100
VDD = 30 V
VGS = 10 V
RG = 0 Ω
td(off)
td(on)
10
tr
tf
1
0.1 1 10 100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
10
VGS = 10 V
0V
1
Pulsed
0.1
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
VGS = 0 V
f = 1 MHz
Ciss
100
Coss
Crss
10
0.1 1 10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60 12
50
VDD = 48 V
40
30 V
12 V
30
10
VGS 8
6
20 4
10
0
0
VDS
10
2
ID = 23 A
0
20 30
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
VGS = 0 V
di/dt = 100 A/μs
1 10 100
IF - Drain Current - A
R07DS0014EJ0100 Rev.1.00
Jul 01, 2010
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP23N06YDG.PDF ] | |
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