DataSheet26.com

NSI45090JDT4G PDF даташит

Спецификация NSI45090JDT4G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Adjustable Constant Current Regulator & LED Driver».

Детали детали

Номер произв NSI45090JDT4G
Описание Adjustable Constant Current Regulator & LED Driver
Производители ON Semiconductor
логотип ON Semiconductor логотип 

8 Pages
scroll

No Preview Available !

NSI45090JDT4G Даташит, Описание, Даташиты
NSI45090JDT4G
Adjustable Constant Current
Regulator & LED Driver
45 V, 90 − 160 mA + 15%, 2.7 W Package
The adjustable constant current regulator (CCR) is a simple,
economical and robust device designed to provide a cost effective
solution for regulating current in LEDs (similar to Constant Current
Diode, CCD). The CCR is based on Self-Biased Transistor (SBT)
technology and regulates current over a wide voltage range. It is
designed with a negative temperature coefficient to protect LEDs from
thermal runaway at extreme voltages and currents.
The CCR turns on immediately and is at 20% of regulation with
only 0.5 V Vak. The Radj pin allows Ireg(SS) to be adjusted to higher
currents by attaching a resistor between Radj (Pin 3) and the Cathode
(Pin 4). The Radj pin can also be left open (No Connect) if no
adjustment is required. It requires no external components allowing it
to be designed as a high or low−side regulator. The high anode-
cathode voltage rating withstands surges common in Automotive,
Industrial and Commercial Signage applications. This device is
available in a thermally robust package and is qualified to stringent
AEC−Q101 standard, which is lead-free RoHS compliant and uses
halogen-free molding compound, and UL94−V0 certified.
Features
Robust Power Package: 2.7 Watts
Adjustable up to 160 mA
Wide Operating Voltage Range
Immediate Turn-On
Voltage Surge Suppressing − Protecting LEDs
UL94−V0 Certified
SBT (Self−Biased Transistor) Technology
Negative Temperature Coefficient
Eliminates Additional Regulation
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Automobile: Chevron Side Mirror Markers, Cluster, Display &
Instrument Backlighting, CHMSL, Map Light
AC Lighting Panels, Display Signage, Decorative Lighting, Channel
Lettering
Switch Contact Wetting
Application Note AND8391/D − Power Dissipation Considerations
Application Note AND8349/D − Automotive CHMSL
http://onsemi.com
Ireg(SS) = 90 − 160 mA
@ Vak = 7.5 V
Anode
1
3
Radj
4
Cathode
4
12
3
DPAK
CASE 369C
MARKING DIAGRAM
1
A
Radj
YWW
NSI
90JG
C
Y = Year
WW = Work Week
NSI90J = Specific Device Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NSI45090JDT4G
DPAK 2500/Tape & Reel
(Pb−Free)
NSV45090JDT4G DPAK 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 3
1
Publication Order Number:
NSI45090JD/D









No Preview Available !

NSI45090JDT4G Даташит, Описание, Даташиты
NSI45090JDT4G
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Anode−Cathode Voltage
Vak Max
45
V
Reverse Voltage
Operating and Storage Junction Temperature Range
ESD Rating:
Human Body Model
Machine Model
VR
TJ, Tstg
ESD
500 mV
−55 to +175
°C
Class 3A (4000 V)
Class B (200 V)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Steady State Current @ Vak = 7.5 V (Note 1)
Voltage Overhead (Note 2)
Pulse Current @ Vak = 7.5 V (Note 3)
Capacitance @ Vak = 7.5 V (Note 4)
Ireg(SS)
Voverhead
Ireg(P)
C
76.5
86.2
90 103.5 mA
1.8 V
103 119.6 mA
17 pF
Capacitance @ Vak = 0 V (Note 4)
C 70 pF
1. Ireg(SS) steady state is the voltage (Vak) applied for a time duration 80 sec, using FR−4 @ 300 mm2 2 oz. Copper traces, in still air.
2. Voverhead = Vin − VLEDs. Voverhead is typical value for 65% Ireg(SS).
3. Ireg(P) non−repetitive pulse test. Pulse width t 1 msec.
4. f = 1 MHz, 0.02 V RMS.
Figure 1. CCR Voltage−Current Characteristic
http://onsemi.com
2









No Preview Available !

NSI45090JDT4G Даташит, Описание, Даташиты
NSI45090JDT4G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 5) TA = 25°C
Derate above 25°C
PD
1771
mW
14.16
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 5)
Thermal Reference, Junction−to−Lead 4 (Note 5)
Total Device Dissipation (Note 6) TA = 25°C
Derate above 25°C
RθJA
RψJL4
PD
70.6
6.8
2083
16.67
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 6)
Thermal Reference, Junction−to−Lead 4 (Note 6)
Total Device Dissipation (Note 7) TA = 25°C
Derate above 25°C
RθJA
RψJL4
PD
60
6.3
2080
16.64
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 7)
Thermal Reference, Junction−to−Lead 4 (Note 7)
Total Device Dissipation (Note 8) TA = 25°C
Derate above 25°C
RθJA
RψJL4
PD
60.1
6.5
2441
19.53
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 8)
Thermal Reference, Junction−to−Lead 4 (Note 8)
Total Device Dissipation (Note 9) TA = 25°C
Derate above 25°C
RθJA
RψJL4
PD
51.2
5.9
2309
18.47
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 9)
Thermal Reference, Junction−to−Lead 4 (Note 9)
Total Device Dissipation (Note 10) TA = 25°C
Derate above 25°C
RθJA
RψJL4
PD
54.1
6.2
2713
21.71
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 10)
RθJA
46.1 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 10)
RψJL4
5.7 °C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +175
°C
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
5. FR−4 @ 300 mm2, 1 oz. copper traces, still air.
6. FR−4 @ 300 mm2, 2 oz. copper traces, still air.
7. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
8. FR−4 @ 500 mm2, 2 oz. copper traces, still air.
9. FR−4 @ 700 mm2, 1 oz. copper traces, still air.
10. FR−4 @ 700 mm2, 2 oz. copper traces, still air.
http://onsemi.com
3










Скачать PDF:

[ NSI45090JDT4G.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NSI45090JDT4GAdjustable Constant Current Regulator & LED DriverON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск