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NSIC2050JBT3G PDF даташит

Спецификация NSIC2050JBT3G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Constant Current Regulator & LED Driver».

Детали детали

Номер произв NSIC2050JBT3G
Описание Constant Current Regulator & LED Driver
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSIC2050JBT3G Даташит, Описание, Даташиты
NSIC2050JBT3G
Constant Current Regulator
& LED Driver for A/C off-line
Applications
120 V, 50 mA + 15%, 3 W Package
The linear constant current regulator (CCR) is a simple, economical
and robust device designed to provide a cost−effective solution for
regulating current in LEDs (similar to Constant Current Diode, CCD).
The CCR is based on Self−Biased Transistor (SBT) technology and
regulates current over a wide voltage range. It is designed with a
negative temperature coefficient to protect LEDs from thermal
runaway at extreme voltages and currents.
The CCR turns on immediately and is at 20% of regulation with
only 0.5 V Vak. It requires no external components allowing it to be
designed as a high or low−side regulator.
The 120 V anode−cathode voltage rating is designed to withstand
the high peak voltage incurred in A/C offline applications. The high
anode−cathode voltage rating withstands surges common in
Automotive, Industrial and Commercial Signage applications.
Features
Robust Power Package: 2.3 W
Wide Operating Voltage Range
Immediate Turn-On
Voltage Surge Suppressing − Protecting LEDs
UL94−V0 Certified
SBT (Self−Biased Transistor) Technology
Negative Temperature Coefficient
Also available in 30 mA (NSIC2030JBT1G) and 20 mA
(NSIC2020JBT1G)
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications and Reference/Design Documents
Automobile: Chevron Side Mirror Markers, Cluster, Displays &
Instruments Backlighting, CHMSL, Map Light
AC Lighting Panels, Display Signage, Decorative Lighting, Channel
Lettering
Application Note AND8349/D – Automotive CHMSL
Application Notes AND8391/D, AND9008/D − Power Dissipation
Considerations
Application Note AND8433/D – A/C Application
Application Note AND8492/D – A/C Capacitive Drop Design
Application Note AND9098/D − Protecting a CCR from ISO 7637−2
Pulse 2A and Reverse Pulses
Design Note DN05013 – A/C Design
Design Note DN06065 – A/C Design with PFC
http://onsemi.com
Ireg(SS) = 50 mA
@ Vak = 7.5 V
Anode 2
Cathode 1
1
2
SMB
CASE 403A
MARKING DIAGRAM
AYWW
1
2050JG
2
G
2050J = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NSIC2050JBT3G
Package
SMB
(Pb−Free)
Shipping
2500 / Tape &
Reel
NSVC2050JBT3G SMB
(Pb−Free)
2500 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 1
1
Publication Order Number:
NSIC2050JB/D









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NSIC2050JBT3G Даташит, Описание, Даташиты
NSIC2050JBT3G
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Anode−Cathode Voltage
Vak Max
120
V
Reverse Voltage
Operating Junction and Storage Temperature Range
ESD Rating: Human Body Model
Machine Model
VR
TJ, Tstg
ESD
500
−55 to +175
Class 3A (4000 V)
Class C (400 V)
mV
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Steady State Current @ Vak = 7.5 V (Note 1)
Ireg(SS)
42.5
50
57.5 mA
Voltage Overhead (Note 2)
Voverhead
1.8
V
Pulse Current @ Vak = 7.5 V (Note 3)
Ireg(P)
48.1 57.4 66.7
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Ireg(SS) steady state is the voltage (Vak) applied for a time duration 80 sec, using 100 mm2 , 1 oz. Cu (or equivalent), in still air.
2. Voverhead = Vin − VLEDs. Voverhead is typical value for 80% Ireg(SS).
3. Ireg(P) non−repetitive pulse test. Pulse width t 360 msec.
Figure 1. CCR Voltage−Current Characteristic
http://onsemi.com
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NSIC2050JBT3G Даташит, Описание, Даташиты
NSIC2050JBT3G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 1) TA = 25°C
Derate above 25°C
PD
1210
mW
8.0 mW/°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Reference, Junction−to−Tab (Note 1)
Total Device Dissipation (Note 2) TA = 25°C
Derate above 25°C
RθJA
RψJL
PD
124
17.5
1282
8.5
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Reference, Junction−to−Tab (Note 2)
Total Device Dissipation (Note 3) TA = 25°C
Derate above 25°C
RθJA
RψJL
PD
117
18.2
1667
11.1
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 3)
Thermal Reference, Junction−to−Tab (Note 3)
Total Device Dissipation (Note 4) TA = 25°C
Derate above 25°C
RθJA
RψJL
PD
90
16.4
1765
11.8
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 4)
Thermal Reference, Junction−to−Tab (Note 4)
Total Device Dissipation (Note 5) TA = 25°C
Derate above 25°C
RθJA
RψJL
PD
85
16.7
1948
13
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 5)
Thermal Reference, Junction−to−Tab (Note 5)
Total Device Dissipation (Note 6) TA = 25°C
Derate above 25°C
RθJA
RψJL
PD
77
15.5
2055
12.7
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 6)
Thermal Reference, Junction−to−Tab (Note 6)
Total Device Dissipation (Note 7) TA = 25°C
Derate above 25°C
RθJA
RψJL
PD
73
15.6
2149
14.3
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 7)
Thermal Reference, Junction−to−Tab (Note 7)
Total Device Dissipation (Note 8) TA = 25°C
Derate above 25°C
RθJA
RψJL
PD
69.8
14.8
2269
15.1
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 8)
Thermal Reference, Junction−to−Tab (Note 8)
Total Device Dissipation (Note 9) TA = 25°C
Derate above 25°C
RθJA
RψJL
PD
66.1
14.8
2609
17.4
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 9)
Thermal Reference, Junction−to−Tab (Note 9)
Total Device Dissipation (Note 10) TA = 25°C
Derate above 25°C
RθJA
RψJL
PD
57.5
13.9
2500
16.7
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 10)
Thermal Reference, Junction−to−Tab (Note 10)
Total Device Dissipation (Note 11) TA = 25°C
Derate above 25°C
RθJA
RψJL
PD
60
16
3000
20
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 11)
Thermal Reference, Junction−to−Tab (Note 11)
RθJA 50 °C/W
RψJL 16 °C/W
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
1. 100 mm2, 1 oz. Cu, still air.
2. 100 mm2, 2 oz. Cu, still air.
3. 300 mm2, 1 oz. Cu, still air.
4. 300 mm2, 2 oz. Cu, still air.
5. 500 mm2, 1 oz. Cu, still air.
6. 500 mm2, 2 oz. Cu, still air.
7. 700 mm2, 1 oz. Cu, still air.
8. 700 mm2, 2 oz. Cu, still air.
9. 1000 mm2, 3 oz. Cu, still air.
10. 400 mm2, PCB is DENKA K1, 1.5 mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu, or equivalent, still air.
11. 900 mm2, PCB is DENKA K1, 1.5 mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu, or equivalent, still air.
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NSIC2050JBT3GConstant Current Regulator & LED DriverON Semiconductor
ON Semiconductor

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