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NSV50010YT1G PDF даташит

Спецификация NSV50010YT1G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Constant Current Regulator & LED Driver».

Детали детали

Номер произв NSV50010YT1G
Описание Constant Current Regulator & LED Driver
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSV50010YT1G Даташит, Описание, Даташиты
NSI50010YT1G
Constant Current Regulator
& LED Driver
50 V, 10 mA + 30%, 460 mW Package
The linear constant current regulator (CCR) is a simple, economical
and robust device designed to provide a cost−effective solution for
regulating current in LEDs (similar to Constant Current Diode, CCD).
The CCR is based on Self-Biased Transistor (SBT) technology and
regulates current over a wide voltage range. It is designed with a
negative temperature coefficient to protect LEDs from thermal
runaway at extreme voltages and currents.
The CCR turns on immediately and is at 40% of regulation with
only 0.5 V Vak. It requires no external components allowing it to be
designed as a high or low−side regulator. The high anode-cathode
voltage rating withstands surges common in Automotive, Industrial
and Commercial Signage applications. The CCR comes in thermally
robust packages and is qualified to AEC-Q101 standard, and
UL94−V0 certified.
Features
Robust Power Package: 460 mW
Wide Operating Voltage Range
Immediate Turn-On
Voltage Surge Suppressing − Protecting LEDs
UL94−V0 Certified
SBT (Self−Biased Transistor) Technology
Negative Temperature Coefficient
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Automobile: Chevron Side Mirror Markers, Cluster, Display &
Instrument Backlighting, CHMSL, Map Light
AC Lighting Panels, Display Signage, Decorative Lighting, Channel
Lettering
Switch Contact Wetting
Application Note AND8391/D − Power Dissipation Considerations
Application Note AND8349/D − Automotive CHMSL
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Anode−Cathode Voltage
Vak Max
50
V
Reverse Voltage
Operating and Storage Junction
Temperature Range
VR
TJ, Tstg
500
−55 to +150
mV
°C
ESD Rating: Human Body Model
Machine Model
ESD
Class 1C
Class B
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
Ireg(SS) = 10 mA
@ Vak = 7.5 V
Anode 2
Cathode 1
2
1
SOD−123
CASE 425
STYLE 1
MARKING DIAGRAM
AJ M G
1 G2
AJ = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NSI50010YT1G SOD−123 3000/Tape & Reel
(Pb−Free)
NSV50010YT1G SOD−123 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 2
1
Publication Order Number:
NSI50010Y/D









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NSV50010YT1G Даташит, Описание, Даташиты
NSI50010YT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Steady State Current @ Vak = 7.5 V (Note 1)
Voltage Overhead (Note 2)
Pulse Current @ Vak = 7.5 V (Note 3)
Capacitance @ Vak = 7.5 V (Note 4)
Ireg(SS)
Voverhead
Ireg(P)
C
7.0
7.1
10 13 mA
1.8 V
10.5 13.8 mA
2.5 pF
Capacitance @ Vak = 0 V (Note 4)
C 5.7 pF
1. Ireg(SS) steady state is the voltage (Vak) applied for a time duration 10 sec, using FR−4 @ 300 mm2 1 oz. Copper traces, in still air.
2. Voverhead = Vin − VLEDs. Voverhead is typical value for 80% Ireg(SS).
3. Ireg(P) non−repetitive pulse test. Pulse width t 300 msec.
4. f = 1 MHz, 0.02 V RMS.
Figure 1. CCR Voltage−Current Characteristic
http://onsemi.com
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NSV50010YT1G Даташит, Описание, Даташиты
NSI50010YT1G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 5) TA = 25°C
Derate above 25°C
PD 208 mW
1.66 mW/°C
Thermal Resistance, Junction−to−Ambient (Note 5)
Thermal Reference, Lead−to−Ambient (Note 5)
Thermal Reference, Junction−to−Cathode Lead (Note 5)
Total Device Dissipation (Note 6) TA = 25°C
Derate above 25°C
RθJA
RψLA
RψJL
PD
600 °C/W
404 °C/W
196 °C/W
227 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient (Note 6)
Thermal Reference, Lead−to−Ambient (Note 6)
Thermal Reference, Junction−to−Cathode Lead (Note 6)
Total Device Dissipation (Note 7) TA = 25°C
Derate above 25°C
RθJA
RψLA
RψJL
PD
550 °C/W
390 °C/W
160 °C/W
347 mW
2.8 mW/°C
Thermal Resistance, Junction−to−Ambient (Note 7)
Thermal Reference, Lead−to−Ambient (Note 7)
Thermal Reference, Junction−to−Cathode Lead (Note 7)
Total Device Dissipation (Note 8) TA = 25°C
Derate above 25°C
RθJA
RψLA
RψJL
PD
360 °C/W
200 °C/W
160 °C/W
368 mW
2.9 mW/°C
Thermal Resistance, Junction−to−Ambient (Note 8)
Thermal Reference, Lead−to−Ambient (Note 8)
Thermal Reference, Junction−to−Cathode Lead (Note 8)
Total Device Dissipation (Note 9) TA = 25°C
Derate above 25°C
RθJA
RψLA
RψJL
PD
340 °C/W
208 °C/W
132 °C/W
436 mW
3.5 mW/°C
Thermal Resistance, Junction−to−Ambient (Note 9)
Thermal Reference, Lead−to−Ambient (Note 9)
Thermal Reference, Junction−to−Cathode Lead (Note 9)
Total Device Dissipation (Note 10) TA = 25°C
Derate above 25°C
RθJA
RψLA
RψJL
PD
287 °C/W
139 °C/W
148 °C/W
463 mW
3.7 mW/°C
Thermal Resistance, Junction−to−Ambient (Note 10)
RθJA
270 °C/W
Thermal Reference, Lead−to−Ambient (Note 10)
RψLA
150 °C/W
Thermal Reference, Junction−to−Cathode Lead (Note 10)
RψJL
120 °C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
5. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
6. FR−4 @ 100 mm2, 2 oz. copper traces, still air.
7. FR−4 @ 300 mm2, 1 oz. copper traces, still air.
8. FR−4 @ 300 mm2, 2 oz. copper traces, still air.
9. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
10. FR−4 @ 500 mm2, 2 oz. copper traces, still air.
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NSV50010YT1GConstant Current Regulator & LED DriverON Semiconductor
ON Semiconductor

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