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FDPF680N10T Datasheet Download - Fairchild Semiconductor

Номер произв FDPF680N10T
Описание N-Channel PowerTrench MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FDPF680N10T Даташит, Описание, Даташиты
November 2013
FDPF680N10T
N-Channel PowerTrench® MOSFET
100 V, 12 A, 68 mΩ
Features
• RDS(on) = 54 mΩ (Typ.) @ VGS = 10 V, ID = 6 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Applications
• Consumer Appliances
• LCD/LED/PDP TV
• Synchronous Rectification
• Uninterruptible Power Supply
• Micro Solar Inverter
D
GDS
TO-220F
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDPF680N10T
100
±20
12
7.6
48
50.4
13.0
24
0.19
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDPF680N10T
5.2
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2008 Fairchild Semiconductor Corporation
FDPF680N10T Rev. C5
1
www.fairchildsemi.com







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FDPF680N10T Даташит, Описание, Даташиты
Package Marking and Ordering Information
Part Number
FDPF680N10T
Top Mark
FDPF680N10T
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TC = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
100
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 6 A
VDS = 10 V, ID = 12 A
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 50 V, VGS = 0 V,
f = 1 MHz
VDS = 80 V, ID = 12 A,
VGS = 10 V
(Note 4)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 50 V, ID = 12 A,
VGS = 10 V, RG = 10 Ω
(Note 4)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 12 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 12 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.7 mH, IAS = 12A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 12 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
Typ.
-
0.1
-
-
-
3.5
54
26
750
60
25
13
4
4
13
19
18
6
-
-
-
29
35
Quantity
50 units
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
4.5 V
68 mΩ
-S
1000
80
40
17
-
-
pF
pF
pF
nC
nC
nC
36 ns
48 ns
46 ns
22 ns
12 A
48 A
1.3 V
- ns
- nC
©2008 Fairchild Semiconductor Corporation
FDPF680N10T Rev. C5
2
www.fairchildsemi.com







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FDPF680N10T Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
60
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
10 6.5 V
6.0 V
5.5 V
1
0.1
0.01
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
0.1 1
VDS,Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.20
0.15
0.10
0.05
VGS = 10V
VGS = 20V
0 *Note: TC = 25oC
0 10 20 30 40 50 60
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
5000
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Ciss
Crss = Cgd
Coss
100 Crss
10
0.01
*Note:
1. VGS = 0V
2. f = 1MHz
0.1 1 10
VDS, Drain-Source Voltage [V]
50
Figure 2. Transfer Characteristics
60
150oC
10 -55oC
25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
45678
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
200
100
150oC
10
25oC
1
0.1
0.0
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.5 1.0
VSD, Body Diode Forward Voltage [V]
1.5
Figure 6. Gate Charge Characteristics
10
VDS = 25V
8 VDS = 50V
VDS = 80V
6
4
2
0 *Note: ID = 12A
0 3 6 9 12 15
Qg, Total Gate Charge [nC]
©2008 Fairchild Semiconductor Corporation
FDPF680N10T Rev. C5
3
www.fairchildsemi.com










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