DataSheet26.com

даташит FDS86242 PDF ( Datasheet )

FDS86242 Datasheet Download - Fairchild Semiconductor

Номер произв FDS86242
Описание N-Channel PowerTrench MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

1Page
		

No Preview Available !

FDS86242 Даташит, Описание, Даташиты
August 2010
FDS86242
N-Channel PowerTrench® MOSFET
150 V, 4.1 A, 67 mΩ
Features
General Description
„ Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A
„ Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A
„ High performance trench technology for extremely low rDS(on)
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
„ High power and current handling capability in a widely used
surface mount package
„ 100% UIL Tested
„ RoHS Compliant
Applications
„ DC/DC converters and Off-Line UPS
„ Distributed Power Architectures and VRMs
„ Primary Switch for 24V and 48V Systems
„ High Voltage Synchronous Rectifier
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1)
(Note 1a)
Ratings
150
±20
4.1
20
40
5.0
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
25
50
°C/W
Device Marking
FDS86242
Device
FDS86242
Package
SO-8
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
FDS86242 Rev. C
1
www.fairchildsemi.com







No Preview Available !

FDS86242 Даташит, Описание, Даташиты
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperatur
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
150 V
104 mV/°C
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 4.1 A
VGS = 6 V, ID = 3.3 A
VGS = 10 V, ID = 4.1 A, TJ = 125 °C
VDS = 10 V, ID = 4.1 A
2
3.5
-10
56.3
73.8
107
11
4V
mV/°C
67
98 mΩ
126
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 75 V, VGS = 0 V,
f = 1MHz
570 760
64 85
2.9 5
0.5
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 75 V, ID = 4.1 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V
VDD = 75 V,
ID = 4.1 A
7.9 16
ns
1.5 10
ns
13 23 ns
2.8 10
ns
8.9 13 nC
4.9 7
nC
3.0 nC
2.0 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = 4.1 A
VGS = 0 V, IS = 2 A
(Note 2)
(Note 2)
0.81 1.3
0.77 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 4.1 A, di/dt = 100 A/μs
61 98 ns
71 114 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 9 A, VDD = 135 V, VGS = 10 V.
©2010 Fairchild Semiconductor Corporation
FDS86242 Rev. C
2
www.fairchildsemi.com







No Preview Available !

FDS86242 Даташит, Описание, Даташиты
Typical Characteristics TJ = 25 °C unless otherwise noted
20
VGS = 10 V
VGS = 7 V
15
VGS = 6 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
10
VGS = 5.5 V
5
VGS = 5 V
0
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
5
VGS = 5 V
VGS = 5.5 V
4
VGS = 6 V
3
2
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0 5 10
ID, DRAIN CURRENT (A)
VGS = 7 V
VGS = 10 V
15 20
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.4
2.2
ID = 4.1 A
VGS = 10 V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
300
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
250
ID = 4.1 A
200
150
TJ = 125 oC
100
TJ = 25 oC
50
0
456789
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
15
VDS = 5 V
10
TJ = 150 oC
5
TJ = 25 oC
TJ = -55 oC
0
234567
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
30
VGS = 0 V
10
TJ = 150 oC
1
0.1
0.01
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2010 Fairchild Semiconductor Corporation
FDS86242 Rev. C
3
www.fairchildsemi.com










Всего страниц 6 Pages
Скачать PDF[ FDS86242.PDF Даташит ]

Ссылка Поделиться


Related Datasheets

Номер в каталогеОписаниеПроизводители
FDS86240MOSFETFairchild Semiconductor
Fairchild Semiconductor
FDS86242N-Channel PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor

Номер в каталоге Описание Производители
6MBP200RA-060

Intelligent Power Module

Fuji Electric
Fuji Electric
ADF41020

18 GHz Microwave PLL Synthesizer

Analog Devices
Analog Devices
AN-SY6280

Low Loss Power Distribution Switch

Silergy
Silergy

DataSheet26.com    |    2019    |   Контакты    |    Поиск