DataSheet26.com

даташит HGT1S20N36G3VLS PDF ( Datasheet )

HGT1S20N36G3VLS Datasheet Download - Fairchild Semiconductor

Номер произв HGT1S20N36G3VLS
Описание Voltage Clamping IGBTs
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

1Page
		

No Preview Available !

HGT1S20N36G3VLS Даташит, Описание, Даташиты
March 2004
HGTP20N36G3VL,HGT1S20N36G3VLS,
HGT1S20N36G3VL
20A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175oC
• Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device which is
intended to be used as an ignition coil driver in automotive ignition
circuits. Unique features include an active voltage clamp between
the collector and the gate which provides Self Clamped Inductive
Switching (SCIS) capability in ignition circuits. Internal diodes pro-
vide ESD protection for the logic level gate. Both a series resistor
and a shunt resistor are provided in the gate circuit.
PACKAGING
PART NUMBER
PACKAGE
BRAND
HGTP20N36G3VL
TO-220AB
20N36GVL
HGT1S20N36G3VL
TO-262AA
20N36GVL
HGT1S20N36G3VLS
TO-263AB
20N36GVL
Packages
COLLECTOR
(FLANGE)
JEDEC TO-220AB
EC
G
JEDEC TO-263AB
G
E
JEDEC TO-262AA
ECG
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
Symbol
COLLECTOR
The development type number for this device is TA49296.
GATE
R1
R2
EMITTER
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Bkdn Voltage At 10mA, RGE = 1k. . . . . . . . . . . . . . . . . . . . . . . BVCER
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS
Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 . . . . . . . . . . . . . IC25
At VGE = 5.0V, TC = +100oC . . . . . . . . . . . . . . . . . . . .IC100
Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Inductive Switching Current At L = 2.3mH, TC = +25o C . . . . . . . . . . . . . . . . . . . . . . ISCIS
At L = 2.3mH, TC = +150oC . . . . . . . . . . . . . . . . . . . . . . ISCIS
Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . EAS
Power Dissipation Total At TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Electrostatic Voltage at 100pF, 1500. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
NOTE: May be exceeded if IGEM is limited to 10mA.
HGTP20N36G3VL
HGT1S20N36G3VL
HGT1S20N36G3VLS
395
28
37.7
26
±10
21
16
500
150
1.0
-40 to +175
260
6
UNITS
V
V
A
A
V
A
A
mJ
W
W/oC
oC
oC
KV
©2004 Fairchild Semiconductor Corporation
HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1







No Preview Available !

HGT1S20N36G3VLS Даташит, Описание, Даташиты
Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Gate-Emitter Plateau Voltage
Gate Charge
Collector-Emitter Clamp Breakdown
Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Leakage Current
Emitter-Collector Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Gate Series Resistance
Gate-Emitter Resistance
Gate-Emitter Leakage Current
Gate-Emitter Breakdown Voltage
Current Turn-Off Time-Inductive Load
Inductive Use Test
Thermal Resistance
SYMBOL
TEST CONDITIONS
BVCES
IC = 10mA,
VGE = 0V
BVCER
IC = 10mA
VGE = 0V
RGE = 1k
VGEP
QG(ON)
BVCE(CL)
BVECS
ICES
IECS
VCE(SAT)
IC = 10A
VCE = 12V
IC = 10A
VGE = 5V
VCE = 12V
IC = 10A
RG = 1K
IC = 10mA
VCE = 250V
VCE = 250V
VEC = 24V
IC = 10A
VGE = 4.5V
IC = 20A
VGE = 5.0V
VGE(TH)
R1
R2
IC = 1mA
VCE = VGE
TC = +175oC
TC = +25oC
TC = -40oC
TC = +175oC
TC = +25oC
TC = -40oC
TC = +25oC
TC = +25oC
TC = +175oC
TC = +25oC
TC = +25oC
TC = +175oC
TC = +25oC
TC = +25oC
TC = +175oC
TC = +25oC
TC = +175oC
TC = +25oC
TC = +25oC
TC = +25oC
IGES
VGE = ±10V
BVGES
IGES = ±2mA
tD(OFF)I +
tF(OFF)I
ISCIS
IC = 10A, RG = 25,
L = 550µH, RL = 26.4, VGE = 5V,
VCL = 300V, TC = +175oC
L = 2.3mH,
VG = 5V,
RG = 1K
TC = +150oC
TC = +25oC
RθJC
LIMITS
MIN TYP MAX UNITS
345 380 415
V
355 385 415
V
355 390 425
V
320 360 395
V
335 365 395
V
335 370 410
V
- 3.7 - V
- 28.7
-
nC
330 360 415
V
28 36
-
V
- - 5 µA
- - 250 µA
- - 1.0 mA
- 1.3 1.6 V
-
1.25
1.5
V
- 1.6 1.9 V
- 1.9 2.4 V
1.1 1.6 2.3
V
-
10
±330
±12
-
75
20
±500
±14
15
-
30
±1000
-
30
k
µA
V
µs
16 -
-A
21 -
-A
- - 1.0 oC/W
©2004 Fairchild Semiconductor Corporation
HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1







No Preview Available !

HGT1S20N36G3VLS Даташит, Описание, Даташиты
Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS
Typical Performance Curves
50
PULSE DURATION = 250µs,
DUTY CYCLE <0.5%, VCE = 10V
40
30
TC = 175oC
20
TC = 25oC
10
0
1
TC = -40oC
234 5
VGE, GATE to EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
6
100
VGE = 10V
80
7V
60
40
20
0
0
5.0V
4.5V
4.0V
3.5V
PULSE DURATION = 250µs,
DUTY CYCLE <0.5%, TC = +25oC
24
68
VCE, COLLECTOR to EMITTER VOLTAGE (V)
10
FIGURE 2. SATURATION CHARACTERISTICS
TC = 175oC
40
30
VGE = 4.5V
20
10
VGE = 5.0V
VGE = 4.0V
0
01 2 34
VCE(SAT) , SATURATION VOLTAGE (V)
FIGURE 3. COLLECTOR to EMITTER CURRENT vs
SATURATION VOLTAGE
1.4
ICE = 10A
1.3
VGE = 4.0V
VGE = 4.5V
1.2 VGE = 5.0V
1.1
-25
25
75
125
TJ, JUNCTION TEMPERATURE (oC)
175
FIGURE 5. SATURATION VOLTAGE vs JUNCTION
TEMPERATURE
©2004 Fairchild Semiconductor Corporation
50
VGE = 4.5V
40
30
-40oC
25oC
175oC
20
10
0
01 23 4
VCE(SAT) , SATURATION VOLTAGE (V)
5
FIGURE 4. COLLECTOR to EMITTER CURRENT vs
SATURATION VOLTAGE
2.2
ICE = 20A
2.1
2.0 VGE = 4.0V
1.9
1.8 VGE = 4.5V
1.7
1.6 VGE = 45.50V
1.5
-25
25
75 125
TJ, JUNCTION TEMPERATURE (oC)
175
FIGURE 6. SATURATION VOLTAGE vs JUNCTION
TEMPERATURE
HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1










Всего страниц 7 Pages
Скачать PDF[ HGT1S20N36G3VLS.PDF Даташит ]

Ссылка Поделиться


Related Datasheets

Номер в каталогеОписаниеПроизводители
HGT1S20N36G3VLVoltage Clamping IGBTsFairchild Semiconductor
Fairchild Semiconductor
HGT1S20N36G3VLSVoltage Clamping IGBTsFairchild Semiconductor
Fairchild Semiconductor

Номер в каталоге Описание Производители
6MBP200RA-060

Intelligent Power Module

Fuji Electric
Fuji Electric
ADF41020

18 GHz Microwave PLL Synthesizer

Analog Devices
Analog Devices
AN-SY6280

Low Loss Power Distribution Switch

Silergy
Silergy

DataSheet26.com    |    2019    |   Контакты    |    Поиск