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PDF NCV7707 Data sheet ( Hoja de datos )
| Número de pieza | NCV7707 | |
| Descripción | Door-Module Driver-IC | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NCV7707, NCV7707B
Door-Module Driver-IC
The NCV7707/B is a powerful Driver−IC for automotive body
control systems. The IC is designed to control several loads in the front
door of a vehicle. The monolithic IC is able to control mirror functions
like mirror positioning, heating and folding including the
electro−chromic mirror feature. Besides two half−bridge outputs to
control lock and safe−lock motors, the device features four high−side
outputs to drive LEDs or incandescent bulbs (up to 10 W). To allow
maximum flexibility, all lighting outputs can be PWM controlled thru
PWM inputs (external signal source) or by an internal programmable
PWM generator unit. The NCV7707/B is controlled thru a 24 bit SPI
interface with in−frame response.
Features
• Operating Range from 5.5 V to 28 V
• Six High−Side and Six Low−Side Drivers Connected as
Half−Bridges
♦ 2x Half−bridges Iload = 0.75 A; RDS(on) = 1.6 W @ 25°C
♦ 2x Half−Bridges Iload = 3 A; RDS(on) = 300 mW @ 25°C
♦ 2x Half−Bridges Iload = 6 A; RDS(on) = 150 mW @ 25°C
• Four High−Side Lamp Drivers
♦ 2x LED; Iload = 0.3 A; RDS(on) = 1.4 W @ 25°C
♦ 2x 10 W; configurable as LED Driver; Iload = 2.5 A;
RDS(on) = 300 mW @ 25°C
• One High−Side Driver for Mirror Heating; Iload = 6 A;
RDS(on) = 100 mW @ 25°C
• Electro Chromic Mirror Control
♦ 1x 6−Bit Selectable Output Voltage Controller
♦ 1x LS for EC Control; Iload = 0.75 A; RDS(on) = 1.6 W @ 25°C
• Independent PWM Functionality for All Outputs
• Integrated Programmable PWM Generator Unit for All Lamp Driver
Outputs
• Programmable Soft−start Function to Drive Loads with Higher
Inrush Currents as Current Limitation Value
• Multiplex Current Sense Analog Output for Advanced Load
Monitoring
• Very Low Current Consumption in Standby Mode
• Charge Pump Output to Control an External Reverse Polarity
Protection MOSFET
• 24−Bit SPI Interface for Output Control and Diagnostic
• Protection Against Short−circuit, Overvoltage and Overtemperature
• AEC−Q100 Qualified and PPAP Capable
• SSOP36−EP Power Package
• This is a Pb−Free Device
Typical Applications
• De−centralized Door Electronic Systems
• Body Control Units (BCUs)
www.onsemi.com
SSOP36 EP
CASE 940AB
MARKING DIAGRAM
NCV7707x
AWLYYWWG
x = blank or B
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NCV7707DQR2G SSOP36−EP 1500 / Tape &
(Pb−Free)
Reel
NCV7707DQBR2G SSOP36−EP 1500 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
September, 2016 − Rev. 3
1
Publication Order Number:
NCV7707/D
1 page  
NCV7707, NCV7707B
ABSOLUTE MAXIMUM RATINGS
Symbol
Rating
Min Max Unit
Power supply voltage
Vs − Continuous supply voltage
− Transient supply voltage (t < 500 ms, ”clamped load dump”)
−0.3 28 V
−0.3 40
VCC
Vdig
Visout/pwm2
Logic supply
DC voltage at all logic pins (SO, SI, SCLK, CSB, PWM1)
Current monitor output / PWM2 logic input
Vchp
Charge pump output (the most stringent value is applied)
−0.3
−0.3
−0.3
−25
Vs − 25
5.5
VCC + 0.3
VCC + 0.3
40
Vs + 15
V
V
V
V
Voutx,
Vecon, Vecfb
Static output voltage (OUT1−11, ECON, ECFB)
−0.3
Vs + 0.3
V
Iout1/6
OUT1/6 Output current
−5 5 A
Iout2/3
OUT2/3 Output current
−1.25
1.25 A
Iout4/5
OUT4/5 Output current
−10 10 A
Iout7/8
OUT7/8 Output current
−5 5 A
Iout9/10
OUT9/10 Output current
−1.25
1.25 A
Iout11
OUT11 Output current
−10 10 A
Iout_ecfb
ECFB Output current
1.25 A
ESD_HBM
ESD Voltage, Human Body Model (HBM); (100 pF, 1500 W) (Note 1)
− All pins
− Output pins OUT1−6 and ECFB to GND (all unzapped pins grounded)
−2 2 kV
−4 4
ESD_CDM
ESD according to CDM (Charge Device Model) (Note 1)
− All pins
− Corner pins
−500
−750
500 V
750
TJ Operating junction temperature range
Tstg Storage temperature range
−40 150 °C
−55 150 °C
MSL
Moisture sensitivity level (Note 2)
MSL3
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Charge Device Model tested per EIA/JES D22/C101, Field Induced Charge Model
2. For soldering information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
THERMAL CHARACTERISTICS
Symbol
Rating
Value
Unit
RθJC
Thermal Characteristics, SSOP36−EP
Thermal Resistance, Junction−to−Case
2.5 °C/W
RθJA
Thermal Characteristics, SSOP36−EP, 1−layer PCB
Thermal Resistance, Junction−to−Air (Note 3)
42 °C/W
RθJA
Thermal Characteristics, SSOP36−EP, 4−layer PCB
Thermal Resistance, Junction−to−Air (Note 4)
19.5 °C/W
3. Values based on PCB of 76.2 x 114.3 mm, 72 μm copper thickness, 20 % copper area coverage and FR4 PCB substrate.
4. Values based on PCB of 76.2 x 114.3 mm, 72 / 36 μm copper thickness (signal layers / internal planes), 20 / 90 % copper area coverage
(signal layers / internal planes) and FR4 PCB substrate.
www.onsemi.com
5
5 Page 
NCV7707, NCV7707B
ELECTRICAL CHARACTERISTICS (continued)
4.5 V < VCC < 5.25 V, 8 V < Vs < 18 V, −40°C < TJ < 150°C; unless otherwise noted.
Symbol
Parameter
Test Conditions
Min Typ
Max Unit
BULB / LED DRIVER OUTPUTS OUT7, OUT8
Ron_out7,8_ICB
Ron_out7,8_LED
Ilim7,8_ICB
On−resistance to supply,
HS switch, Bulb mode
On−resistance to supply,
HS switch, LED mode
Output current limitation to
GND, Bulb mode
TJ = 25°C, Iout7,8 = −1 A
TJ = 125°C, Iout7,8 = −1 A
TJ = 25°C, Iout7,8 = −0.2 A
TJ = 125°C, Iout7,8 = −0.2 A
0.3
W
0.6
1.4
W
3
−3.7 −2.5 A
Ilim7,8_LED
Overcurrent threshold,
LED mode
−1.1 −0.5 A
Iuld7,8_ICB
Underload detection
threshold, Bulb mode
−60 −5 mA
Iuld7,8_LED
Underload detection
threshold, LED mode
−15 −5 mA
Output delay time, Driver
td_OUT7,8_ICB(on) on,
Bulb mode
Output delay time, Driver
td_OUT7,8_ICB(off) off,
Bulb mode
Time from CSB going high to
V(OUT7,8) = 0.1·Vs / 0.9·Vs (on/
off);
Rload = 16 W
15 48
ms
21 48
Output delay time, Driver
td_OUT7,8_LED(on) on,
LED mode
Output delay time, Driver
td_OUT7,8_LED(off) off,
LED mode
Time from CSB going high to
V(OUT7,8) = 0.1·Vs / 0.9·Vs (on/
off);
Rload = 64 W
15 48
ms
21 48
Ileak_act7,8
Output leakage current,
Active mode
V(OUT7,8) = 0 V
−15
mA
Ileak_stdby7,8
Output leakage current,
Standby mode
V(OUT7,8) = 0 V
−5
mA
Ileak_out_vs7,8 Output pull−down current V(OUT7,8) = VS
1 mA
td_uld7,8
Underload blanking delay
430
3000
ms
td_old_ICB7,8
Overload shutdown
blanking delay, Bulb mode
100 160 ms
td_old_LED7,8
Overload shutdown
blanking delay, LED mode
only
10 100 ms
frec7,8L
Recovery frequency, slow
recovery mode recovery
CONTROL_3.OCRF = 0
1
2.1 kHz
frec7,8H
Recovery frequency, fast
recovery mode (LED mode CONTROL_3.OCRF = 1
only)
2
6 kHz
dVout7,8_ICB Slew rate, Bulb mode
Vs = 13.5 V, Rload = 16 W
0.2 V/ms
dVout7,8_LED Slew rate, LED mode
Vs = 13.5 V, Rload = 64 W
0.2 V/ms
dVout7,8_ocr
Slew rate in overcurrent
recovery mode
Vs = 13.5 V, Rload = 5 W
12
3 V/ms
www.onsemi.com
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet NCV7707.PDF ] | |
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