DataSheet26.com

SZNUD3160DMT1G PDF даташит

Спецификация SZNUD3160DMT1G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Industrial Inductive Load Driver».

Детали детали

Номер произв SZNUD3160DMT1G
Описание Industrial Inductive Load Driver
Производители ON Semiconductor
логотип ON Semiconductor логотип 

10 Pages
scroll

No Preview Available !

SZNUD3160DMT1G Даташит, Описание, Даташиты
NUD3160, SZNUD3160
Industrial Inductive
Load Driver
This microintegrated part provides a single component solution to
switch inductive loads such as relays, solenoids, and small DC motors
without the need of a freewheeling diode. It accepts logic level
inputs, thus allowing it to be driven by a large variety of devices
including logic gates, inverters, and microcontrollers.
Features
Provides Robust Interface between D.C. Relay Coils and Sensitive
Logic
Capable of Driving Relay Coils Rated up to 150 mA at 12 V, 24 V
or 48 V
Replaces 3 or 4 Discrete Components for Lower Cost
Internal Zener Eliminates Need for FreeWheeling Diode
Meets Load Dump and other Automotive Specs
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These are PbFree Devices
Typical Applications
Automotive and Industrial Environment
Drives Window, Latch, Door, and Antenna Relays
Benefits
Reduced PCB Space
Standardized Driver for Wide Range of Relays
Simplifies Circuit Design and PCB Layout
Compliance with Automotive Specifications
http://onsemi.com
MARKING DIAGRAMS
3
1
2
SOT23
CASE 318
STYLE 21
JW8 MG
G
JW8 = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
6
1
SC74
CASE 318F
STYLE 7
JW8 MG
G
JW8 = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping
NUD3160LT1G
SZNUD3160LT1G
SOT23
(PbFree)
SOT23
(PbFree)
3000 / Tape &
Reel
3000 / Tape &
Reel
NUD3160DMT1G
SC74 3000 / Tape &
(PbFree)
Reel
SZNUD3160DMT1G SC74 3000 / Tape &
(PbFree)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Drain (3)
Drain (6)
Drain (3)
Gate (1)
10 k
100 k
Source (2)
CASE 318
Gate (2)
10 k
100 k
10 k
100 k
Source (1)
Source (4)
Figure 1. Internal Circuit DiagramsCASE 318F
Gate (5)
© Semiconductor Components Industries, LLC, 2012
February, 2012 Rev. 6
1
Publication Order Number:
NUD3160/D









No Preview Available !

SZNUD3160DMT1G Даташит, Описание, Даташиты
NUD3160, SZNUD3160
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Symbol
Rating
Value
Unit
VDSS
VGSS
ID
DraintoSource Voltage – Continuous (TJ = 125°C)
GatetoSource Voltage – Continuous (TJ = 125°C)
Drain Current – Continuous (TJ = 125°C)
Minimum copper, double sided board, TA = 80°C
SOT23
SC74 Single device driven
SC74 Both devices driven
1 in2 copper, double sided board, TA = 25°C
SOT23
SC74 Single device driven
SC74 Both devices driven
60
12
158
157
132 ea
272
263
230 ea
V
V
mA
EZ
PPK
ELD1
ELD2
ELD3
RevBat
Single Pulse DraintoSource Avalanche Energy
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
Peak Power Dissipation, DraintoSource (Notes 1 and 2)
(TJ Initial = 85°C)
Load Dump Pulse, DraintoSource (Note 3)
RSOURCE = 0.5 W, T = 300 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
Inductive Switching Transient 1, DraintoSource
(Waveform: RSOURCE = 10 W, T = 2.0 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
Inductive Switching Transient 2, DraintoSource
(Waveform: RSOURCE = 4.0 W, T = 50 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
Reverse Battery, 10 Minutes (DraintoSource)
(For Relay’s Coils/Inductive Loads of 80 W or more)
200 mJ
20 W
60 V
100 V
300 V
14 V
DualVolt
Dual Voltage Jump Start, 10 Minutes (DraintoSource)
28 V
ESD
Human Body Model (HBM)
According to EIA/JESD22/A114 Specification
2000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
http://onsemi.com
2









No Preview Available !

SZNUD3160DMT1G Даташит, Описание, Даташиты
NUD3160, SZNUD3160
THERMAL CHARACTERISTICS
Symbol
Rating
TA
TJ
TSTG
PD
Operating Ambient Temperature
Maximum Junction Temperature
Storage Temperature Range
Total Power Dissipation (Note 4)
Derating above 25°C
PD Total Power Dissipation (Note 4)
Derating above 25°C
RqJA
Thermal Resistance, Junction–to–Ambient
Minimum Copper
SOT23
SC74
SOT23
SC74 One Device Powered
SC74 Both Devices Equally Powered
300 mm2 Copper
1. Nonrepetitive current square pulse 1.0 ms duration.
2. For different square pulse durations, see Figure 12.
3. Nonrepetitive load dump pulse per Figure 3.
4. Mounted onto minimum pad board.
SOT23
SC74 One Device Powered
SC74 Both Devices Equally Powered
Value
40 to 125
150
65 to 150
225
1.8
380
3.0
556
556
398
395
420
270
Unit
°C
°C
°C
mW
mW/°C
mW
mW/°C
°C/W
http://onsemi.com
3










Скачать PDF:

[ SZNUD3160DMT1G.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
SZNUD3160DMT1GIndustrial Inductive Load DriverON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск