SZNUD3160DMT1G PDF даташит
Спецификация SZNUD3160DMT1G изготовлена «ON Semiconductor» и имеет функцию, называемую «Industrial Inductive Load Driver». |
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Детали детали
Номер произв | SZNUD3160DMT1G |
Описание | Industrial Inductive Load Driver |
Производители | ON Semiconductor |
логотип |
10 Pages
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NUD3160, SZNUD3160
Industrial Inductive
Load Driver
This micro−integrated part provides a single component solution to
switch inductive loads such as relays, solenoids, and small DC motors
without the need of a free−wheeling diode. It accepts logic level
inputs, thus allowing it to be driven by a large variety of devices
including logic gates, inverters, and microcontrollers.
Features
• Provides Robust Interface between D.C. Relay Coils and Sensitive
Logic
• Capable of Driving Relay Coils Rated up to 150 mA at 12 V, 24 V
or 48 V
• Replaces 3 or 4 Discrete Components for Lower Cost
• Internal Zener Eliminates Need for Free−Wheeling Diode
• Meets Load Dump and other Automotive Specs
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These are Pb−Free Devices
Typical Applications
• Automotive and Industrial Environment
• Drives Window, Latch, Door, and Antenna Relays
Benefits
• Reduced PCB Space
• Standardized Driver for Wide Range of Relays
• Simplifies Circuit Design and PCB Layout
• Compliance with Automotive Specifications
http://onsemi.com
MARKING DIAGRAMS
3
1
2
SOT−23
CASE 318
STYLE 21
JW8 MG
G
JW8 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
6
1
SC−74
CASE 318F
STYLE 7
JW8 MG
G
JW8 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping†
NUD3160LT1G
SZNUD3160LT1G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
3000 / Tape &
Reel
3000 / Tape &
Reel
NUD3160DMT1G
SC−74 3000 / Tape &
(Pb−Free)
Reel
SZNUD3160DMT1G SC−74 3000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Drain (3)
Drain (6)
Drain (3)
Gate (1)
10 k
100 k
Source (2)
CASE 318
Gate (2)
10 k
100 k
10 k
100 k
Source (1)
Source (4)
Figure 1. Internal Circuit DiagramsCASE 318F
Gate (5)
© Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 6
1
Publication Order Number:
NUD3160/D
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NUD3160, SZNUD3160
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Symbol
Rating
Value
Unit
VDSS
VGSS
ID
Drain−to−Source Voltage – Continuous (TJ = 125°C)
Gate−to−Source Voltage – Continuous (TJ = 125°C)
Drain Current – Continuous (TJ = 125°C)
Minimum copper, double sided board, TA = 80°C
SOT−23
SC74 Single device driven
SC74 Both devices driven
1 in2 copper, double sided board, TA = 25°C
SOT−23
SC74 Single device driven
SC74 Both devices driven
60
12
158
157
132 ea
272
263
230 ea
V
V
mA
EZ
PPK
ELD1
ELD2
ELD3
Rev−Bat
Single Pulse Drain−to−Source Avalanche Energy
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
Peak Power Dissipation, Drain−to−Source (Notes 1 and 2)
(TJ Initial = 85°C)
Load Dump Pulse, Drain−to−Source (Note 3)
RSOURCE = 0.5 W, T = 300 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
Inductive Switching Transient 1, Drain−to−Source
(Waveform: RSOURCE = 10 W, T = 2.0 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
Inductive Switching Transient 2, Drain−to−Source
(Waveform: RSOURCE = 4.0 W, T = 50 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
Reverse Battery, 10 Minutes (Drain−to−Source)
(For Relay’s Coils/Inductive Loads of 80 W or more)
200 mJ
20 W
60 V
100 V
300 V
−14 V
Dual−Volt
Dual Voltage Jump Start, 10 Minutes (Drain−to−Source)
28 V
ESD
Human Body Model (HBM)
According to EIA/JESD22/A114 Specification
2000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
http://onsemi.com
2
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NUD3160, SZNUD3160
THERMAL CHARACTERISTICS
Symbol
Rating
TA
TJ
TSTG
PD
Operating Ambient Temperature
Maximum Junction Temperature
Storage Temperature Range
Total Power Dissipation (Note 4)
Derating above 25°C
PD Total Power Dissipation (Note 4)
Derating above 25°C
RqJA
Thermal Resistance, Junction–to–Ambient
Minimum Copper
SOT−23
SC−74
SOT−23
SC−74 One Device Powered
SC−74 Both Devices Equally Powered
300 mm2 Copper
1. Nonrepetitive current square pulse 1.0 ms duration.
2. For different square pulse durations, see Figure 12.
3. Nonrepetitive load dump pulse per Figure 3.
4. Mounted onto minimum pad board.
SOT−23
SC−74 One Device Powered
SC−74 Both Devices Equally Powered
Value
−40 to 125
150
−65 to 150
225
1.8
380
3.0
556
556
398
395
420
270
Unit
°C
°C
°C
mW
mW/°C
mW
mW/°C
°C/W
http://onsemi.com
3
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Номер в каталоге | Описание | Производители |
SZNUD3160DMT1G | Industrial Inductive Load Driver | ON Semiconductor |
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