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Спецификация D2641 изготовлена «Sanken Electric» и имеет функцию, называемую «Silicon NPN Triple Diffused Planar Transistor». |
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Детали детали
Номер произв | D2641 |
Описание | Silicon NPN Triple Diffused Planar Transistor |
Производители | Sanken Electric |
логотип |
1 Pages
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2SD2641Darlington
Equivalent circuit
B
C
(70Ω)
E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685)
Application : Audio, Series Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C)
Symbol
Ratings
Unit
Symbol
Conditions
Ratings
Unit
VCBO 110 V ICBO
VCB=110V
100max
µA
VCEO 110 V IEBO
VEB=5V
100max
µA
VEBO
5
V V(BR)CEO
IC=30mA
110min
V
IC
6
A hFE
VCE=4V, IC=5A
5000min∗
IB
1
A VCE(sat)
IC=5A, IB=5mA
2.5max
V
PC
60(Tc=25°C)
W
VBE(sat)
IC=5A, IB=5mA
3.0max
V
Tj
150 °C fT
VCE=12V, IE=–2A
60typ
MHz
Tstg
–55 to +150
°C
COB
VCB=10V, f=1MHz
55typ
pF
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC
RL IC
VBB1
VBB2
IB1
IB2
ton tstg
tf
(V)
(Ω) (A)
(V)
(V)
(mA)
(mA)
(µs)
(µs)
(µs)
30 6 5 10 –5 5 –5 0.8typ 6.2typ 1.1typ
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
BCE
1.4
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I C– V CE Characteristics (Typical)
6
0.5mA
0.4mA
0.3mA
4
0.2mA
2
IB=0.1mA
0
02 4 6
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
6
24
IC=5A
12
IC=3A
0
0.1
0.5 1
5 10
Base Current IB(mA)
50 100
0
0 1 2 2.5
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
50000
(VCE=4V)
10000
5000
h FE– I C Temperature Characteristics (Typical)
50000
(VCE=4V)
125˚C
10000
5000 25˚C
θ j-a– t Characteristics
5
1000
500
100
0.01
0.1 0.5 1
Collector Current IC(A)
1000
500
100
5 6 0.01
–30˚C
0.1 0.5 1
Collector Current IC(A)
1
0.5
56 1
5 10
50 100
Time t(ms)
500 1000 2000
f T– I E Characteristics (Typical)
(VCE=12V)
80
Typ
60
40
20
0
–0.02
160
–0.1
–1
Emitter Current IE(A)
–6
Safe Operating Area (Single Pulse)
20
10
5
DC
1
0.5
0.1
0.05
3
Without Heatsink
Natural Cooling
5 10
50 100
Collector-Emitter Voltage VCE(V)
200
Pc–Ta Derating
60
40
20
Without Heatsink
3.5
0
0 25 50
75 100 125
Ambient Temperature Ta(˚C)
150
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Номер в каталоге | Описание | Производители |
D2641 | Silicon NPN Triple Diffused Planar Transistor | Sanken Electric |
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D2646 | NPN Transistor - 2SD2646 | Sanyo Semiconductor |
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DataSheet26.com | 2020 | Контакты | Поиск |