GE4953 PDF даташит
Спецификация GE4953 изготовлена «GEMOS» и имеет функцию, называемую «P-CHANNEL MOS FIELD EFFECT TRANSISTOR». |
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Детали детали
Номер произв | GE4953 |
Описание | P-CHANNEL MOS FIELD EFFECT TRANSISTOR |
Производители | GEMOS |
логотип |
4 Pages
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GEMOS
MOS FIELD EFFECT TRANSISTOR
GE4953
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The GE4953 uses advanced trench technology to provide
excellent RDS(ON), low gate charge. It has been optimized for
power management applications requiring a wide range of
gave drive voltage ratings (4.5V – 25V).
GENERAL FEATURES
● VDS = -30V,ID = -4.9A RDS(ON) < 85mΩ @ VGS=-4.5V
RDS(ON) < 53mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
APPLICATIONS
● Battery protection
● Load switch
● Power management
Schematic diagram
Marking and pin Assignment
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
4953
Device
GE4953
Package
SOP-8
Reel Size
Ø330mm
Tape width
12mm
ABSOLUTE MAXIMUM RATLNGS(TA=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ Current-Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
-30
±20
-4.9
-30
2.0
-55 to 150
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient
(Note 2)
RθJA
62.5
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
Drain-Source On-State Resistance RDS(ON)
Forward Transconductance
gFS
Condition
VGS=0V,ID=-250µA
VDS=-30V,VGS=0V
VGS=±20V,VDS=0V
VDS=VGS,,ID=-250µA
VGS=-10V, ID=-4.9A
VGS=-4.5V, ID=-3.5A
VDS=-15V, ID=-4.5A
Min
-30
-1
5
Typ
43
64
10
Max
-1
±100
-2
53
85
Quantity
3000 units
Unit
V
V
A
A
W
℃
℃/W
Unit
V
µA
nA
V
mΩ
mΩ
S
捷拓科技有限公司
地 址:廣東省深圳市福田區南園路 68 号上步大廈 18 樓 I-L 室
電 話:0755-83661391
郵政編碼:518031
傳 真:0755-83661909
公司網站:www.gemostech.com
GEMOS(SHEN ZHEN) TECHNOLOGY LIMITED COMPANY
ADD:Room I-L,18F,Shangbu Bldg.,NO.68 Nanyuan Road, Futian District,Shenzhen China.
Tel:0755-83661391
Fax:0755-83661909
Postcode:518031
Website:www.gemostech.com
© GEMOS TECH CO., LTD. 2007
No Preview Available ! |
GEMOS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 4)
Clss
Coss
Crss
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
VDS=-15V,VGS=0V,
F=1.0MHz
VDD=-15V,ID=-1A
VGS=-10V,RGEN=6Ω
VDS=-15V,ID=-4.5A,
VGS=-10V
VGS=0V,IS=-1.7A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
550
90
60
12
3
22
4
10
3.3
1.8
-0.8
24
6
44
8
13
-1.2
-1.7
GE4953
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
Figure 1: Switching Test Circuit
Figure 2: Switching Waveforms
Figure 3: Normalized Maximum Transient Thermal Impedance
©GEMOS TECH CO.,LTD.
2006.9.6
Version:1.1
Page 2 of 4
No Preview Available ! |
GEMOS
GE4953
SOP-8 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
NOTES:
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©GEMOS TECH CO.,LTD.
2006.9.6
Version:1.1
Page 3 of 4
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GE4953 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR | GEMOS |
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