|
|
PDF FDB5800 Data sheet ( Hoja de datos )
| Número de pieza | FDB5800 | |
| Descripción | N-Channel Logic Level PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDB5800 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
FDB5800
N-Channel Logic Level PowerTrench® MOSFET
60 V, 80 A, 6 mΩ
November 2013
Features
• RDS(on) = 4.6 mΩ (Typ.), VGS = 10 V, ID = 80 A
• High Performance Trench Technology for Extermly
Low RDS(on)
• Low Gate Charge
• High Power and Current Handing Capability
• RoHs Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process
that has been tailored to minimize the on-state
resistance while maintaining superior switching
performance.
Applications
• Power tools
• Motor drives and Uninterruptible Power Supplies
D
D
G
S
D2-PAK
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current
- Continuous (TC < 102oC, VGS = 10 V)
- Continuous (TC < 90oC, VGS = 5 V)
- Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W)
- Pulsed
EAS Single Pulse Avalanche Energy
PD
- Power Dissipation
- Derate above 25oC
TJ, TSTG - Operating and Storage Temperature
(Note 1)
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-263, Max.
Thermal Resistance Junction to Ambient TO-263, Max.
( Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
FDB5800
60
±20
80
80
14
Figure 4
652
242
1.61
-55 to 175
0.62
62.5
43
Unit
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
©2005 Fairchild Semiconductor Corporation
FDB5800 Rev. C2
1
www.fairchildsemi.com
1 page  
Typical Characteristics TC = 25°C unless otherwise noted
1.4
VGS = VDS
1.2 ID = 250µA
1.0
1.2
ID = 250µA
1.1
0.8
0.6 1.0
0.4
0.2
- 80
- 40 0 40 80 120 160
TJ, AMBIENT TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.9
- 80
- 40 0 40 80 120 160
TJ, AMBIENT TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
20000
10000
CISS
10
VDD =30V
8
1000
COSS
f = 1MHz
VGS = 0V
CRSS
100
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 13. Capacitance vs Drain to Source
Voltage
6
4
WAVEFORMS IN
ASCENDING ORDER:
2 ID = 80A
ID = 1A
0
0
20 40 60 80
Qg, GATE CHARGE (nC)
100
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2005 Fairchild Semiconductor Corporation
FDB5800 Rev. C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDB5800.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDB5800 | N-Channel Logic Level PowerTrench MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |