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Número de pieza | NCV33079 | |
Descripción | Low Noise Dual/Quad Operational Amplifiers | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! MC33078, MC33079,
NCV33078, NCV33079
Low Noise Dual/Quad
Operational Amplifiers
The MC33078/9 series is a family of high quality monolithic
amplifiers employing Bipolar technology with innovative high
performance concepts for quality audio and data signal processing
applications. This family incorporates the use of high frequency PNP
input transistors to produce amplifiers exhibiting low input voltage
noise with high gain bandwidth product and slew rate. The all NPN
output stage exhibits no deadband crossover distortion, large output
voltage swing, excellent phase and gain margins, low open loop high
frequency output impedance and symmetrical source and sink AC
frequency performance.
The MC33078/9 family offers both dual and quad amplifier
versions and is available in the plastic DIP and SOIC packages (P and
D suffixes).
Features
• Dual Supply Operation: $5.0 V to $18 V
• Low Voltage Noise: 4.5 nV/ǸHz
• Low Input Offset Voltage: 0.15 mV
• Low T.C. of Input Offset Voltage: 2.0 mV/°C
• Low Total Harmonic Distortion: 0.002%
• High Gain Bandwidth Product: 16 MHz
• High Slew Rate: 7.0 V/ms
• High Open Loop AC Gain: 800 @ 20 kHz
• Excellent Frequency Stability
• Large Output Voltage Swing: +14.1 V/ −14.6 V
• ESD Diodes Provided on the Inputs
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
D1 R2
Q4
VCC
Q9
Q3 Q5
D3
Neg Pos C2
Q11
R7
J1 Amplifier
Biasing
Q3
Q8 D4 C3 R9
Q2
Q6
D2
R4
Q10
R6
Q12 Vout
Z1 Q1
Q7
R1 C1 R3
R5
VEE
Figure 1. Representative Schematic Diagram
(Each Amplifier)
http://onsemi.com
MARKING
DIAGRAMS
DUAL
8
1
PDIP−8
P SUFFIX
CASE 626
8
1
SOIC−8
D SUFFIX
CASE 751
8
MC33078P
AWL
YYWWG
1
8
33078
ALYW
G
1
14
1
QUAD
14
PDIP−14
P SUFFIX
CASE 646
1
MC33079P
AWLYYWWG
14
1
14
SOIC−14
D SUFFIX
CASE 751A
1
MC33079DG
AWLYWW
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G or G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 9
1
Publication Order Number:
MC33078/D
1 page MC33078, MC33079, NCV33078, NCV33079
600
500
400
300
200
100
0
-15
VCC = +15 V
VEE = -15 V
TA = 25°C
-10 - 5.0 0
5.0 10
VCM, COMMON MODE VOLTAGE (V)
Figure 6. Input Bias Current versus
Common Mode Voltage
15
VCC -0
VCC -0.5
VCC -1.0
VCC -1.5
VEE +1.5
VEE +1.0
VEE +0.5
VEE
+0
- 55
+VCM
Voltage
Range
VCC = +3.0 V to +15 V
VEE = -3.0 V to -15 V
DVIO = 5.0 mV
VO = 0 V
-VCM
- 25 0 25 50 75 100
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Input Common Mode Voltage
Range versus Temperature
125
VCC -1.0 -55°C
VCC -3.0
25°C
VCC = +15 V
VEE = -15 V
VCC -5.0
125°C
VEE +5.0
VEE +3.0
VEE +1.0
125°C
25°C
-55°C
0 1.0 2.0 3.0 4.0
RL, LOAD RESISTANCE TO GROUND (kW)
Figure 8. Output Saturation Voltage versus
Load Resistance to Ground
50
Sink
40
Source
30
VCC = +15 V
VEE = -15 V
RL < 100 W
VID = 1.0 V
20
10
- 55
- 25
0
25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
Figure 9. Output Short Circuit Current
versus Temperature
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
- 55
±15 V
±5.0 V
±15 V
±5.0 V
±4.0 V
±10 V
±10 V
VCM = 0 V
RL = ∞
VO = 0 V
MC33079
MC33078
Supply Voltages
- 25 0
25 50
75 100
TA, AMBIENT TEMPERATURE (°C)
Figure 10. Supply Current versus
Temperature
125
160
-
140
D VCM
ADM
+
D VO
120 CMR = 20Log D VCM × ADM
100 D VO
80 VCC = +15 V
VEE = -15 V
60
VCM = 0 V
DVCM = ±1.5 V
40 TA = 25°C
20
100
1.0 k
10 k
100 k
1.0 M
10 M
f, FREQUENCY (Hz)
Figure 11. Common Mode Rejection
versus Frequency
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5
5 Page MC33078, MC33079, NCV33078, NCV33079
PACKAGE DIMENSIONS
D
D1
A
NOTE 5
85
E1
14
F
TOP VIEW
e/2 A
PDIP−8
N SUFFIX
CASE 626−05
ISSUE M
E
c
E2
END VIEW
NOTE 3
L
A1
C
SEATING
PLANE
e
8X b
SIDE VIEW
0.010 M C A
E3
END VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION E IS MEASURED WITH THE LEADS RE-
STRAINED PARALLEL AT WIDTH E2.
4. DIMENSION E1 DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
INCHES
DIM MIN NOM MAX
A −−−− −−−− 0.210
A1 0.015 −−−− −−−−
b 0.014 0.018 0.022
C 0.008 0.010 0.014
D 0.355 0.365 0.400
D1 0.005 −−−− −−−−
E 0.300 0.310 0.325
E1 0.240 0.250 0.280
E2 0.300 BSC
E3 −−−− −−−− 0.430
e 0.100 BSC
L 0.115 0.130 0.150
MILLIMETERS
MIN NOM MAX
−−−− −−−− 5.33
0.38 −−−− −−−−
0.35 0.46 0.56
0.20 0.25 0.36
9.02 9.27 10.02
0.13 −−−− −−−−
7.62 7.87 8.26
6.10 6.35 7.11
7.62 BSC
−−−− −−−− 10.92
2.54 BSC
2.92 3.30 3.81
http://onsemi.com
11
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet NCV33079.PDF ] |
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