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CAV93C66 PDF даташит

Спецификация CAV93C66 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «EEPROM».

Детали детали

Номер произв CAV93C66
Описание EEPROM
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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CAV93C66 Даташит, Описание, Даташиты
CAV93C66
4 Kb Microwire Serial CMOS
EEPROM
Description
The CAV93C66 is a 4 Kb CMOS Serial EEPROM device which is
organized as either 256 registers of 16 bits (ORG pin at VCC) or 512
registers of 8 bits (ORG pin at GND). Each register can be written (or
read) serially by using the DI (or DO) pin. The device features
sequential read and selftimed internal write with autoclear. Onchip
PowerOn Reset circuitry protects the internal logic against powering
up in the wrong state.
Features
Automotive Temperature Grade 1 (40°C to +125°C)
High Speed Operation: 2 MHz
2.5 V to 5.5 V Supply Voltage Range
Selectable x8 or x16 Memory Organization
Selftimed Write Cycle with Autoclear
Sequential Read
Software Write Protection
Powerup Inadvertent Write Protection
Low Power CMOS Technology
1,000,000 Program/Erase Cycles
100 Year Data Retention
8lead SOIC and TSSOP Packages
These Devices are PbFree, Halogen Free/BFR Free, and RoHS
Compliant
VCC
ORG
CS
SK
DI
CAV93C66
DO
GND
Figure 1. Functional Symbol
Note: When the ORG pin is connected to VCC, the x16 organization is
selected. When it is connected to ground, the x8 organization is
selected. If the ORG pin is left unconnected, then an internal pullup
device will select the x16 organization.
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SOIC8
V SUFFIX
CASE 751BD
TSSOP8
Y SUFFIX
CASE 948AL
PIN CONFIGURATIONS
CS 1
SK
DI
DO
VCC
NC
ORG
GND
SOIC (V), TSSOP (Y)
(Top View)
Pin Name
CS
SK
DI
DO
VCC
GND
ORG
NC
PIN FUNCTION
Function
Chip Select
Clock Input
Serial Data Input
Serial Data Output
Power Supply
Ground
Memory Organization
No Connection
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
December, 2013 Rev. P0
1
Publication Order Number:
CAV93C66/D









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CAV93C66 Даташит, Описание, Даташиты
CAV93C66
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Storage Temperature
65 to +150
°C
Voltage on Any Pin with Respect to Ground (Note 1)
0.5 to +6.5
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than 0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than 1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min Units
NEND (Note 3) Endurance
1,000,000
Program / Erase Cycles
TDR Data Retention
100 Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100
and JEDEC test methods.
3. Block Mode, VCC = 5 V, 25°C.
Table 3. D.C. OPERATING CHARACTERISTICS (VCC = +2.5 V to +5.5 V, TA=40°C to +125°C unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min Max Units
ICC1
ICC2
ISB1
Supply Current (Write)
Supply Current (Read)
Standby Current
(x8 Mode)
VCC = 5.0 V
DO open, fSK = 2 MHz, VCC = 5.0 V
VIN = GND or VCC
CS = GND, ORG = GND
1 mA
500 mA
5 mA
ISB2
ILI
ILO
VIL1
VIH1
VIL2
VIH2
VOL1
VOH1
VOL2
VOH2
Standby Current
(x16 Mode)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
VCISN
=
=
GND or
GND,
VCC
ORG = Float or VCC
VIN = GND to VCC
VOUT = GND to VCC CS = GND
4.5 V VCC < 5.5 V
4.5 V VCC < 5.5 V
2.5 V VCC < 4.5 V
2.5 V VCC < 4.5 V
4.5 V VCC < 5.5 V, IOL = 3 mA
4.5 V VCC < 5.5 V, IOH = 400 mA
2.5 V VCC < 4.5 V, IOL = 1 mA
2.5 V VCC < 4.5 V, IOH = 100 mA
3 mA
0.1
2
0
VCC x 0.7
2.4
VCC 0.2
2
2
0.8
VCC + 1
VCC x 0.2
VCC + 1
0.4
0.2
mA
mA
V
V
V
V
V
V
V
V
Table 4. PIN CAPACITANCE (TA = 25°C, f = 1.0 MHz, VCC = +5.0 V)
Symbol
Test
Conditions
Min Typ
Max Units
COUT (Note 4)
Output Capacitance (DO)
VOUT = 0 V
5 pF
CIN (Note 4)
Input Capacitance (CS, SK, DI, ORG)
VIN = 0 V
5 pF
4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100
and JEDEC test methods.
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CAV93C66 Даташит, Описание, Даташиты
CAV93C66
Table 5. POWERUP TIMING (Notes 5, 6)
Symbol
Parameter
Max Units
tPUR
Powerup to Read Operation
1 ms
tPUW
Powerup to Write Operation
1 ms
5. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate
AECQ100 and JEDEC test methods.
6. tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated.
Table 6. A.C. TEST CONDITIONS
Input Rise and Fall Times
Input Pulse Voltages
Timing Reference Voltages
Input Pulse Voltages
Timing Reference Voltages
Output Load
50 ns
0.4 V to 2.4 V
0.8 V, 2.0 V
0.2 VCC to 0.7 VCC
0.5 VCC
Current Source IOLmax/IOHmax; CL = 100 pF
4.5 V VCC 5.5 V
4.5 V VCC 5.5 V
2.5 V VCC 4.5 V
2.5 V VCC 4.5 V
Table 7. A.C. CHARACTERISTICS (VCC = +2.5 V to +5.5 V, TA = 40°C to +125°C, unless otherwise specified.)
Symbol
Parameter
Min Max
Units
tCSS
CS Setup Time
50
tCSH
CS Hold Time
0
tDIS DI Setup Time
100
tDIH DI Hold Time
100
tPD1 Output Delay to 1
0.25
tPD0 Output Delay to 0
0.25
tHZ (Note 7) Output Delay to HighZ
100
tEW Program/Erase Pulse Width
5
tCSMIN
Minimum CS Low Time
0.25
tSKHI
Minimum SK High Time
0.25
tSKLOW
Minimum SK Low Time
0.25
tSV Output Delay to Status Valid
0.25
SKMAX
Maximum Clock Frequency
DC 2000
7. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate
AECQ100 and JEDEC test methods.
ns
ns
ns
ns
ms
ms
ns
ms
ms
ms
ms
ms
kHz
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CAV93C66EEPROMON Semiconductor
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