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PDF NP55N03SUG Data sheet ( Hoja de datos )
| Número de pieza | NP55N03SUG | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP55N03SUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
NP55N03SUG-E1-AY Note
NP55N03SUG-E2-AY Note
Pure Sn (Tin)
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-252 (MP-3ZK) typ. 0.27 g
FEATURES
• Channel temperature 175 degree rated
• Low on-state resistance
RDS(on) = 5.0 mΩ MAX. (VGS = 10 V, ID = 28 A)
• Low input capacitance
Ciss = 3500 pF TYP. (VDS = 25 V)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30 V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20 V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±55
±220
A
A
Total Power Dissipation (TC = 25°C)
PT1
77 W
Total Power Dissipation (TA = 25°C)
PT2
1.2 W
Channel Temperature
Tch 175 °C
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg
−55 to +175
°C
IAR 33 A
EAR 109 mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
(TO-252)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.95
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18320EJ2V0DS00 (2nd edition)
Date Published May 2008 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006, 2007
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
8
VGS = 10 V
ID = 28 A
6
4
2
0
-75
Pulsed
-25 25 75 125 175
Tch - Channel Temperature - °C
225
SWITCHING CHARACTERISTICS
1000
100
td(on)
td(off)
tr
10
VDD = 15 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
tf
10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10 VGS = 10 V
0V
1
0.1
0.01
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
NP55N03SUG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
100
0.1
1
Crss
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
35
30
25
20
15
10
5
0
0
VDD = 24 V
15 V
6V
12
9
6
VGS
3
VDS
ID = 55 A
0
10 20 30 40 50 60 70
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
VGS = 0 V
di/dt = 100 A/μs
1 10
IF - Diode Forward Current - A
100
Data Sheet D18320EJ2V0DS
5
5 Page | ||
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| PDF Descargar | [ Datasheet NP55N03SUG.PDF ] | |
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