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NCV4264-2C PDF даташит

Спецификация NCV4264-2C изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Low Dropout Linear Regulator».

Детали детали

Номер произв NCV4264-2C
Описание Low Dropout Linear Regulator
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NCV4264-2C Даташит, Описание, Даташиты
NCV4264-2C
Low IQ Low Dropout
Linear Regulator
The NCV4264−2C is a low quiescent current consumption LDO
regulator. Its output stage supplies 100 mA with ±2.0% output
voltage accuracy.
Maximum dropout voltage is 500 mV at 100 mA load current.
It is internally protected against 45 V input transients, input supply
reversal, output overcurrent faults, and excess die temperature. No
external components are required to enable these features.
Features
3.3 V and 5.0 V Fixed Output
"2.0% Output Accuracy, Over Full Temperature Range
33 mA Typical Quiescent Current
500 mV Maximum Dropout Voltage at 100 mA Load Current
Wide Input Voltage Operating Range of 4.5 V to 45 V
Internal Fault Protection
−42 V Reverse Voltage
Short Circuit/Overcurrent
Thermal Overload
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
This is a Pb−Free Device
www.onsemi.com
MARKING
DIAGRAM
TAB
1 23
SOT−223
ST SUFFIX
CASE 318E
AYW
642CxG
G
1
x = 5 (5.0 V Version)
= 3 (3.3 V Version)
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
TAB
1
VIN GND VOUT
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
October, 2015 − Rev. 1
1
Publication Order Number:
NCV4264−2C/D









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NCV4264-2C Даташит, Описание, Даташиты
NCV4264−2C
IN OUT
1.3 V
Reference
+
Error
Amp
-
Thermal
Shutdown
GND
Figure 1. Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
Symbol
Function
1 VIN Unregulated input voltage; 4.5 V to 45 V.
2
GND
Ground; substrate.
3
VOUT
Regulated output voltage; collector of the internal PNP pass transistor.
TAB
GND
Ground; substrate and best thermal connection to the die.
OPERATING RANGE
Rating
Symbol
Min Max
Unit
VIN, DC Input Operating Voltage (Note 3)
VIN
4.5 +45
V
Junction Temperature Operating Range
TJ
−40 +150
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the
Recommended Operating Ranges limits may affect device reliability.
MAXIMUM RATINGS
Rating
Symbol
Min Max
Unit
VIN, DC Input Voltage
VIN
−42 +45
V
VOUT, DC Voltage
Storage Temperature
Moisture Sensitivity Level
VOUT
Tstg
MSL
−0.3 +32
−55 +150
3
V
°C
ESD Capability, Human Body Model (Note 1)
ESD Capability, Machine Model (Note 1)
Lead Temperature Soldering
Reflow (SMD Styles Only), Lead Free (Note 2)
VESDHB
VESDMIM
Tsld
4000
200
265 pk
V
V
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device series incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AEC−Q100−002 (EIA/JESD22−A 114C)
ESD MM tested per AEC−Q100−003 (EIA/JESD22−A 115C)
2. Lead Free, 60 sec – 150 sec above 217°C, 40 sec max at peak.
3. See specific conditions for DC operating input voltage lower than 4.5 V in ELECTRICAL CHARACTERISTICS table at page 3
www.onsemi.com
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NCV4264-2C Даташит, Описание, Даташиты
NCV4264−2C
THERMAL RESISTANCE
Parameter
Junction−to−Ambient
Junction−to−Tab (psi−JL4)
SOT−223
SOT−223
Symbol
RqJA
YJL4
Min Max Unit
− 109 (Note 4)
°C/W
− 10.9
ELECTRICAL CHARACTERISTICS (VIN = 13.5 V, TJ = −40°C to +150°C, unless otherwise noted.)
Characteristic
Symbol
Test Conditions
Min Typ Max Unit
Output Voltage
5.0 V Version
VOUT
5.0 mA v IOUT v 100 mA (Note 5)
6.0 V v VIN v 28 V
4.900 5.000 5.100
V
Output Voltage
3.3 V Version
Output Voltage
3.3 V Version
VOUT
VOUT
5.0 mA v IOUT v 100 mA (Note 5)
4.5 V v VIN v 28 V
IOUT = 5 mA, VIN = 4 V (Note 7)
3.234 3.300 3.366
3.234 3.300 3.366
V
V
Line Regulation
5.0 V Version
Line Regulation
3.3 V Version
Load Regulation
Dropout Voltage − 5.0 V Version
Quiescent Current
Active Ground Current
Power Supply Rejection
PROTECTION
DVOUT vs. VIN
IOUT = 5.0 mA
6.0 V v VIN v 28 V
−30 5.0 +30 mV
DVOUT vs. VIN
IOUT = 5.0 mA
4.5 V v VIN v 28 V
−30 5.0 +30 mV
DVOUT vs. IOUT
1.0 mA v IOUT v 100 mA (Note 5)
−40
5.0
+40
mV
VIN−VOUT
IOUT = 100 mA (Notes 5 & 6)
− 270 500 mV
Iq IOUT = 100 mA
mA
TJ = 25°C
− 33 55
TJ = −40°C to +85°C
− 33 60
TJ = −40°C to 150°C
− 33 70
IG(ON)
IOUT = 50 mA (Note 5)
− 1.5 4.0 mA
PSRR
VRIPPLE = 0.5 VP−P, F = 100 Hz
− 67 − dB
Current Limit
IOUT(LIM) VOUT = 4.5 V (5.0 V Version) (Note 5) 150 − 500 mA
VOUT = 3.0 V (3.3 V Version) (Note 5) 150 − 500
Short Circuit Current Limit
IOUT(SC)
VOUT = 0 V (Note 5)
40 − 500 mA
Thermal Shutdown Threshold
TTSD
(Note 7)
150 − 200 °C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. 1 oz., 100 mm2 copper area.
5. Use pulse loading to limit power dissipation.
6. Dropout voltage = (VIN–VOUT), measured when the output voltage has dropped 100 mV relative to the nominal value obtained with
VIN = 13.5 V.
7. Not tested in production. Limits are guaranteed by design.
4.5−45 V
Input
CIN
100 nF
Vin 1 4264−2C 3 Vout
2
COUT
10 mF
Output
GND
Figure 2. Applications Circuit
www.onsemi.com
3










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