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PDF NCV4299A Data sheet ( Hoja de datos )
| Número de pieza | NCV4299A | |
| Descripción | 150mA Low-Dropout Voltage Regulator | |
| Fabricantes | ON Semiconductor | |
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NCV4299A
150 mA Low-Dropout
Voltage Regulator
The NCV4299A is a family of precision micropower voltage
regulators with an output current capability of 150 mA. It is available in
5.0 V or 3.3 V output voltage.
The output voltage is accurate within "2% with a maximum
dropout voltage of 0.5 V at 100 mA. Low Quiescent current is a
feature drawing only 65 mA with a 100 mA load. This part is ideal for
any and all battery operated microprocessor equipment.
The device features microprocessor interfaces including an
adjustable reset output and adjustable system monitor to provide
shutdown early warning. An inhibit function is available. With inhibit
active, the regulator turns off and the device consumes less than
1.0 mA of quiescent current.
The part can withstand load dump transients making it suitable for
use in automotive environments.
Features
• 5.0 V, 3.3 V ±2%, 150 mA
• Extremely Low Current Consumption
♦ 65 mA (Typ) in the ON Mode
♦ t1.0 mA in the Off Mode
• Early Warning
• Reset Output Low Down to VQ = 1.0 V
• Adjustable Reset Threshold
• Wide Temperature Range
• Fault Protection
♦ 60 V Peak Transient Voltage
♦ −40 V Reverse Voltage
♦ Short Circuit
♦ Thermal Overload
• Internally Fused Leads
• Inhibit Function with mA Current Consumption in the Off Mode
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These are Pb−Free Devices
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14
1
14
SO−14
D SUFFIX
CASE 751A
1
MARKING
DIAGRAM
V4299AxxG
AWLYWW
14
1
14
TSSOP−14 EP
PA SUFFIX
CASE 948AW
V429
9Axx
ALYWG
G
1
xx = 33 (3.3 V Version)
= 50 (5.0 V Version)
A = Assembly Location
WL, L = Wafer Lot
Y = Year
WW, W = Work Week
G or G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
1
RADJ
D
GND
GND
GND
INH
RO
14
SI
I
GND
GND
GND
Q
SO
SOIC−14
RADJ
NC
D
GND
INH
NC
RO
1
EPAD
14
SI
I
NC
Q
NC
NC
SO
TSSOP−14 EP
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 18 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 3
1
Publication Order Number:
NCV4299A/D
1 page  
NCV4299A
ELECTRICAL CHARACTERISTICS (continued) (−40°C < TJ < 150°C; VI = 13.5 V unless otherwise noted.)
Characteristic
Symbol
Test Conditions
Min Typ
Reset (RO)
Delay Output Low Voltage
5.0 V Version
3.3 V Version
Delay Charge Current
Power On Reset Delay Time
Reset Reaction Time
Reset Adjust Switching Threshold
5.0 V Version
3.3 V Version
Input Voltage Sense (SI and SO)
VD,sat
VQ = 4.5 V, Internal RRO
VQ = 2.96 V, Internal RRO
ID VD = 1.0 V
td CD = 100 nF
tRR CD = 100 nF
VRADJ,TH
VQ = 3.5 V
VQ = 2.3 V
−−
− 0.017
4.0 7.1
17 28
0.5 2.2
1.26 1.36
1.26 1.36
Sense Input Threshold High
Sense Input Threshold Low
Sense Input Hysteresis
VSI,High
VSI,Low
−
−
−
(Sense Threshold High) −
(Sense Threshold Low)
1.34 1.45
1.26 1.36
50 90
Sense Input Current
Sense Output Resistance
Sense Output Low Voltage
Allowable External Sense Out
Pullup Resistor
ISI
RSO
VSO
RSOext
VSI = 1.2 V
−
VSI = 1.2 V, VI = 5.5 V, ISO = 0 mA
−
−1.0 0.1
10 20
− 0.1
5.6 −
SI High to SO High Reaction Time
SI Low to SO Low Reaction Time
tPSOLH
tPSOHL
RSOext = 5.6 kW
RSOext = 5.6 kW
− 1.3
− 3.8
Max
0.1
0.1
12
35
4.0
1.44
1.44
1.54
1.44
130
1.0
40
0.4
−
8.0
5.0
Unit
V
mA
ms
ms
V
V
V
mV
mA
kW
V
kW
ms
ms
THERMAL SHUTDOWN
Characteristic
Symbol
Test Conditions
Min Typ Max Unit
Thermal Shutdown Temperature
TSD Iout = 100 mA
150 − 200 °C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
II IQ
VI
IQ
VQ
VINH
VRADJ
VSI
IINH
CD
100 nF
IRADJ
ISI
INH
D
ID
RO
RADJ
SI
SO
GND
Iq
Figure 2. Measurement Circuit
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5
VRO
VSO
5 Page 
NCV4299A
TYPICAL PERFORMANCE CHARACTERISTICS − 3.3 V OPTION
40 7.0
VI = 13.5 V
6.8 VD = 1 V
IQ = 100 mA
30
6.6
6.4
20
6.2
10
−40
6.0
0
40
80 120 160
−40 −20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 30. Resistance vs. Junction
Temperature
Figure 31. Charge Current vs. Junction
Temperature
100
Unstable Region
VI = 13.5 V
TJ = 25°C
10
1 1 mF to 100 mF
0.1 Stable Region
0.01
0 20 40 60 80 100 120 140 160
IQ, OUTPUT CURRENT (mA)
Figure 32. Output Capacitor ESR vs. Output
Current
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