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PDF NCV8570 Data sheet ( Hoja de datos )
| Número de pieza | NCV8570 | |
| Descripción | BiCMOS RF LDO Regulator | |
| Fabricantes | ON Semiconductor | |
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NCV8570
200 mA, Ultra Low Noise,
High PSRR, BiCMOS RF LDO
Regulator
Noise sensitive RF applications such as Power Amplifiers in satellite
radios, infotainment equipment, and precision instrumentation for
automotive applications require very clean power supplies.
The NCV8570 is 200 mA LDO that provides the engineer with a
very stable, accurate voltage with ultra low noise and very high Power
Supply Rejection Ratio (PSRR) suitable for RF applications. In order
to optimize performance for battery operated portable applications,
the NCV8570 employs an advanced BiCMOS process to combine the
benefits of low noise and superior dynamic performance of bipolar
elements with very low ground current consumption at full loads
offered by CMOS.
Furthermore, in order to provide a small footprint for
space−conscious applications, the NCV8570 is stable with small, low
value capacitors and is available in very small DFN6 2x2.2 and
TSOP−5 packages.
Features
Output Voltage Options:
1.8 V, 2.5 V, 2.75 V, 2.8 V, 3.0 V, 3.3 V
Contact Factory for Other Voltage Options
Output Current Limit 200 mA
Ultra Low Noise (typ 15 mVrms)
Very High PSRR (typ 80 dB)
Stable with Ceramic Output Capacitors as low as 1 mF
Low Sleep Mode Current (max 1 mA)
Active Discharge Circuit
Current Limit Protection
Thermal Shutdown Protection
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These are Pb−Free Devices
Typical Applications
Satellite and HD Radio
Noise Sensitive Applications (Video, Audio)
Analog Power Supplies
Portable/Built−in DVD Entertainment Systems
GPS
Vin
Cin
Vin NCV8570 Vout
CE Cnoise
GND
Cnoise
Vout
Cout
Figure 1. Typical Application Schematic
Semiconductor Components Industries, LLC, 2013
June, 2013 − Rev. 4
1
http://onsemi.com
DFN6
MN SUFFIX
CASE 506BA
TSOP−5
SN SUFFIX
CASE 483
PIN ASSIGNMENTS
CE
GND
1
2
6 Cnoise
5 GND
Vin 3
4 Vout
DFN6
(Top View)
1
Vin
5
Vout
GND
CE Cnoise
TSOP−5
(Top View)
ÉÉMARKING DIAGRAMS
XXMG
G
XX = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
5
XXXAYWG
G
1
XXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
Publication Order Number:
NCV8570/D
1 page  
NCV8570
TYPICAL CHARACTERISTICS
4.0
3.5 3.3 V
3.0 3.0 V
2.8 V
2.5 2.5 V
2.0
1.8 V
1.5
1.0
0.5 TA = 25C
0.0 Iout = 1 mA
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Vin, INPUT VOLTAGE (V)
Figure 9. Output Voltage vs. Input Voltage
200
180 TA = 25C Vout = 2.8 V
160
140 Vout = 2.5 V
Vout = 3.3 V
Vout = 3.0 V
120 Iout = 150 mA
100
80
Vout = 1.8 V
Iout = 1 mA
60
40
20
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Vin, INPUT VOLTAGE (V)
Figure 11. Ground Current vs. Input Voltage
140
130
120 Iout = 150 mA
110
100
90
80
70 Iout = 1 mA
60
50
40
−40 −20 0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (C)
Figure 10. Ground Current vs. Temperature
135
130 Vout = 2.5 V
125
120 TA = 85C
115
110
105 TA = 25C
100
95 TA = −40C
90
85
0 25 50 75 100 125 150
Iout, OUTPUT CURRENT (mA)
Figure 12. Dropout Voltage vs. Output Current
125
120 Vout = 2.8 V
TA = 85C
115
110
105 TA = 25C
100
95 TA = −40C
90
85
80
75
0 25 50 75 100 125 150
Iout, OUTPUT CURRENT (mA)
Figure 13. Dropout Voltage vs. Output Current
125
120 Vout = 3.0 V
115
TA = 85C
110
105 TA = 25C
100
95 TA = −40C
90
85
80
75
0 25 50 75 100 125 150
Iout, OUTPUT CURRENT (mA)
Figure 14. Dropout Voltage vs. Output Current
http://onsemi.com
5
5 Page 
NCV8570
PACKAGE DIMENSIONS
TSOP−5
CASE 483−02
ISSUE K
NOTE 5
2X 0.10 T
2X 0.20 T B 5 4
1 23
BG
AA
TOP VIEW
D 5X
0.20 C A B
S
M
K
DETAIL Z
C
0.05 H
SIDE VIEW
C
SEATING
PLANE
DETAIL Z
J
END VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE. DIMENSION A.
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2
FROM BODY.
MILLIMETERS
DIM MIN MAX
A 3.00 BSC
B 1.50 BSC
C 0.90 1.10
D 0.25 0.50
G 0.95 BSC
H 0.01 0.10
J 0.10 0.26
K 0.20 0.60
M 0 _ 10 _
S 2.50 3.00
SOLDERING FOOTPRINT*
0.95
0.037
1.9
0.074
2.4
0.094
1.0
0.039
0.7
0.028
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
The products described herein (NCV8570), may be covered by one or more U.S. patents.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
11
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NCV8570/D
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet NCV8570.PDF ] | |
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