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PDF NP55N055SUG Data sheet ( Hoja de datos )
| Número de pieza | NP55N055SUG | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP55N055SUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP55N055SUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP55N055SUG
TO-252 (MP-3ZK)
FEATURES
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 28 A)
• Low Ciss: Ciss = 3500 pF TYP.
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±55
±220
Total Power Dissipation (TC = 25°C)
PT1 77
Total Power Dissipation (TA = 25°C)
Channel Temperature
PT2 1.2
Tch 175
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg −55 to +175
IAR 27
EAR 73
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Tch < 150°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.95
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16863EJ2V0DS00 (2nd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2004
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
18
16
14
12
10
8
6 VGS = 10 V
4 ID = 28 A
2 Pulsed
0
-100 -50 0 50 100 150 200
Tch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
VDD = 28 V
VGS = 10 V
RG = 0 Ω
td(off)
td(on)
tr
tf
1
0.1
1000
1 10
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
100
10 VGS = 10 V
1
0V
0.1
0.01
0
Pulsed
0.5 1
VF(S-D) - Source to Drain Voltage - V
1.5
NP55N055SUG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
100
0.1
1
Crss
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
45
40
35
30
25
20
15
10
5
0
0
VDD = 44 V
28 V
11 V
VGS
10
8
6
4
2
VDS
ID = 55 A
0
10 20 30 40 50 60 70
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
0.1
VGS = 0 V
di/dt = 100 A/µs
1 10
IF - Diode Forward Current - A
100
Data Sheet D16863EJ2V0DS
5
5 Page | ||
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| PDF Descargar | [ Datasheet NP55N055SUG.PDF ] | |
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