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PDF NP40N055MLE Data sheet ( Hoja de datos )
| Número de pieza | NP40N055MLE | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP40N055ELE, NP40N055KLE
NP40N055CLE, NP40N055DLE, NP40N055MLE, NP40N055NLE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R> ORDERING INFORMATION
PART NUMBER
NP40N055ELE-E1-AY Note1, 2
NP40N055ELE-E2-AY Note1, 2
NP40N055KLE-E1-AY Note1
NP40N055KLE-E2-AY Note1
NP40N055CLE-S12-AZ Note1, 2
NP40N055DLE-S12-AY Note1, 2
NP40N055MLE-S18-AY Note1
NP40N055NLE-S18-AY Note1
LEAD PLATING
Pure Sn (Tin)
Sn-Ag-Cu
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 20 A)
RDS(on)2 = 28 mΩ MAX. (VGS = 5.0 V, ID = 20 A)
RDS(on)3 = 32 mΩ MAX. (VGS = 4.5 V, ID = 20 A)
• Low input capacitance
Ciss = 1300 pF TYP.
• Built-in gate protection diode
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14093EJ7V0DS00 (7th edition)
Date Published October 2007 NS
1999, 2007
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1 page  
NP40N055ELE, NP40N055KLE, NP40N055CLE, NP40N055DLE, NP40N055MLE, NP40N055NLE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000 Pulsed
100
10
TA = −55°C
25°C
75°C
150°C
1 175°C
0.1
1
VDS = 10 V
234 5 6
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 VDS = 10 V
Pulsed
10
TA = 175°C
1 75°C
25°C
−55°C
0.1
0.01
0.01
0.1 1 10
ID - Drain Current - A
100
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
50
Pulsed
40
VGS = 10 V
30 5.0 V
4.5 V
20
10
0
0.1 1
10 100
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
120
100
80
60
40
20
0
0
VGS = 10 V
5.0 V
4.5 V
Pulsed
1 2 34
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
50
Pulsed
40
30
20 ID = 20 A
10
0
0 2 4 6 8 10 12 14 16 18
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
3.0
VDS = VGS
ID = 250 μA
2.5
2.0
1.5
1.0
0.5
0
−50 0 50 100 150
Tch - Channel Temperature - °C
Data Sheet D14093EJ7V0DS
5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet NP40N055MLE.PDF ] | |
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