NVDD5894NL PDF даташит
Спецификация NVDD5894NL изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NVDD5894NL |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
6 Pages
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NVDD5894NL
Power MOSFET
40 V, 10 mW, 64 A, Dual N−Channel
DPAK−5L
Features
• Low RDS(on) to Minimize Conduction Losses
• High Current Capability
• Avalanche Energy Specified
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent RqJC (Notes 1 & 3)
Power Dissipation
(Note 1)
RqJC
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Continuous Drain
C(Nuortreesnt1R, 2qJ&A 3)
Power
(Notes
Dissipation
1 & 2)
RqJA
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
40
"20
64
45
75
38
14
10
3.8
1.9
324
−55 to
+175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 75 A
Single Pulse Drain−to−Source Avalanche
EAS 94 mJ
Energy (TJ = 25°C, IL(pk) = 25 A, L = 0.3 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State (Drain)
RqJC
2.0 °C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
40
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
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V(BR)DSS
40 V
RDS(on) Max
10 mW @ 10 V
14.5 mW @ 4.5 V
Dual N−Channel
D
ID Max
64 A
G1 G2
S1 S2
DPAK 5−LEAD
CASE 175AA
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
x
S1 G1 G2 S2
Y
WW
5894L
G
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NVDD5894NLT4G DPAK−5 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 0
1
Publication Order Number:
NVDD5894NL/D
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NVDD5894NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
V(BR)DSS
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V
VDS = 40 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
40
1
100
±100
V
mA
nA
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
RDS(on)
gFS
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 50 A
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 10 A
1.5 2.5 V
8.3 10 mW
11.2 14.5
8.8 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS
Ciss
Coss
Crss
QG(TOT)
QG(TOT)
QG(TH)
QGS
QGD
VGP
VGS = 0 V, f = 1 MHz
VDS = 25 V
VGS = 4.5 V, VDS = 32 V, ID = 20 A
VGS = 10 V, VDS = 32 V, ID = 20 A
VGS = 10 V, VDS = 32 V, ID = 20 A
2103
259
183
21
41
1.7
6.9
11.3
3.5
pF
nC
nC
V
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 32 V
ID = 20 A, RG = 2.5 W
12.4 ns
30.2
36
54
Forward Diode Voltage
VSD VGS = 0 V TJ = 25°C
IS = 20 A
TJ = 125°C
0.88 1.0
0.76
V
Reverse Recovery Time
tRR
22.8 ns
Charge Time
Discharge Time
ta VGS = 0 V, dIs/dt = 100 A/ms
tb IS = 20A
11.2
11.6
Reverse Recovery Charge
QRR
13.7 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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NVDD5894NL
TYPICAL CHARACTERISTICS
120
110
10 to 5.2
V
VGS = 4.8 V
100
90
4.4 V
80
70 4.0 V
60
50
40 3.6 V
30
20 3.2 V
10 2.8 V
0
012 3 4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
5
120
110
100
90
80
70
60
50
40
30
20
10
0
1
VDS = 5 V
TJ = 25°C
TJ = 150°C
TJ = −55°C
23
45
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
6
0.040
0.036
0.032
ID = 50 A
TJ = 25°C
0.028
0.024
0.020
0.016
0.012
0.008
3.5 4.5 5.5 6.5 7.5 8.5 9.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.00
1.75
1.50
VGS = 10 V
ID = 50 A
1.25
1.00
0.030
0.025
TJ = 25°C
0.020
0.015
VGS = 4.5 V
0.010
VGS = 10 V
0.005
0 10 20 30 40 50 60 70 80 90 100 110
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100,000
10,000
1000
TJ = 150°C
TJ = 125°C
0.75
0.50
−50 −25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
175
100
5 10 15 20 25 30 35 40
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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