DataSheet26.com

NTMD6N04R2G PDF даташит

Спецификация NTMD6N04R2G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTMD6N04R2G
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

5 Pages
scroll

No Preview Available !

NTMD6N04R2G Даташит, Описание, Даташиты
NTMD6N04, NVMD6N04
Power MOSFET
40 V, 5.8 A, Dual NChannel SOIC8
Features
Designed for use in low voltage, high speed switching applications
Ultra Low OnResistance Provides
Higher Efficiency and Extends Battery Life
RDS(on) = 0.027 W, VGS = 10 V (Typ)
RDS(on) = 0.034 W, VGS = 4.5 V (Typ)
Miniature SOIC8 Surface Mount Package Saves Board Space
Diode is Characterized for Use in Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
NVMD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable*
These Devices are PbFree and are RoHS Compliant
Applications
DCDC Converters
Computers
Printers
Cellular and Cordless Phones
Disk Drives and Tape Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current (Note 1)
Continuous @ TA = 25°C
Single Pulse (tp 10 ms)
Drain Current (Note 2)
Continuous @ TA = 25°C
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
Operating and Storage Temperature
Range
VDSS
VGS
ID
IDM
ID
40
"20
5.8
29
4.6
V
V
Adc
Apk
Adc
PD
TJ, Tstg
2.0
1.29
55 to +150
W
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 40 Vdc, VGS = 5.0 Vdc,
Vdc, Peak IL = 7.0 Apk,
L = 10 mH, RG = 25 W)
Thermal Resistance
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
EAS
RqJA
245 mJ
°C/W
62.5
97
Maximum Lead Temperature for
Soldering Purposes for 10 Sec
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1pad size, t 10 s
2. When surface mounted to an FR4 board using 1pad size, t = steady state
http://onsemi.com
VDSS
40 V
RDS(ON) Typ
27 mW @ VGS = 10 V
ID Max
5.8 A
NChannel
D
D
GG
SS
8
1
SOIC8
CASE 751
STYLE 11
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 D1 D2 D2
8
E6N04
AYWW G
G
1
S1 G1 S2 G2
E6N04 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMD6N04R2G
NVMD6N04R2G*
SOIC8
(PbFree)
SOIC8
(PbFree)
2500 / Tape &
Reel
2500 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 Rev. 2
1
Publication Order Number:
NTMD6N04R2/D









No Preview Available !

NTMD6N04R2G Даташит, Описание, Даташиты
NTMD6N04, NVMD6N04
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mA)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 40 Vdc, VGS = 0 Vdc, TJ = 25°C)
(VDS = 40 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
V(BR)DSS
V(BR)DSS/TJ
IDSS
IGSS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
Static DraintoSource OnState Resistance
(VGS = 10 Vdc, ID = 5.8 Adc)
(VGS = 4.5 Vdc, ID = 3.9 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 5.8 Adc)
VGS(th)
VGS(th)/TJ
RDS(on)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 32 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Notes 3 & 4)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDD = 20 Vdc, ID = 5.8 A,
VGS = 10 V,
RG = 6 W)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDD = 20 Vdc, ID = 5.8 A,
VGS = 4.5 V,
RG = 6 W)
Gate Charge
(VDS = 20 Vdc,
VGS = 10 Vdc,
ID = 5.8 A)
BODYDRAIN DIODE RATINGS (Note 3)
Diode Forward OnVoltage
(IS = 1.7 Adc, VGS = 0 V)
(IS = 1.7 Adc, VGS = 0 V, TJ = 150°C)
Reverse Recovery Time
(IS = 1.7 A, VGS = 0 V,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
(IS = 1.7 A, dIS/dt = 100 A/ms, VGS = 0 V)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Qgs
Qgd
VSD
trr
ta
tb
QRR
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperature.
Min
40
1.0
Typ Max Unit
Vdc
47
45 mV/°C
mAdc
1.0
10
nAdc
"100
1.9
4.7
0.027
0.034
8.12
3.0
0.034
0.043
Vdc
mV/°C
W
Mhos
723 900 pF
156 225
53 75
10 18 ns
20 35
45 70
40 65
15 ns
55
30
35
20 30 nC
2.5
5.5
0.76 1.1 Vdc
0.56
23 ns
16
7
20 nC
http://onsemi.com
2









No Preview Available !

NTMD6N04R2G Даташит, Описание, Даташиты
NTMD6N04, NVMD6N04
14
6 V 10 V
12 4.0 V
3.8 V
10
TJ = 25°C
3.4 V
8 3.6 V
3.2 V
6
4 3.0 V
2
2.4 V
2.8 V
0 VGS = 2.6 V
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
0.2
0.15
20
18 VDS w 10 V
16
14
12
10
8 TJ = 100°C
6
4
TJ = 25°C
TJ = 55°C
2
0
1.5
2
2.5 3
3.5
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
4
VGS = 10 V
TJ = 25°C
0.1
0.05
0
23456789
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. OnResistance vs. GatetoSource
Voltage
10
1.8
1.7 ID = 5.8 A
1.6 VGS = 10 V
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
50 25 0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. On Resistance Variation with
Temperature
10000
VGS = 0 V
1000
TJ = 150°C
100
TJ = 100°C
10
1
150 0 3 6 9 12 15 18 21 24 27 30 33 36 39 42
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 5. DraintoSource Leakage Current
vs. Voltage
http://onsemi.com
3










Скачать PDF:

[ NTMD6N04R2G.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTMD6N04R2GPower MOSFET ( Transistor )ON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск