NTMD6N04R2G PDF даташит
Спецификация NTMD6N04R2G изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTMD6N04R2G |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
5 Pages
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NTMD6N04, NVMD6N04
Power MOSFET
40 V, 5.8 A, Dual N−Channel SOIC−8
Features
• Designed for use in low voltage, high speed switching applications
• Ultra Low On−Resistance Provides
Higher Efficiency and Extends Battery Life
− RDS(on) = 0.027 W, VGS = 10 V (Typ)
− RDS(on) = 0.034 W, VGS = 4.5 V (Typ)
• Miniature SOIC−8 Surface Mount Package Saves Board Space
• Diode is Characterized for Use in Bridge Circuits
• Diode Exhibits High Speed, with Soft Recovery
• NVMD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC−DC Converters
• Computers
• Printers
• Cellular and Cordless Phones
• Disk Drives and Tape Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current (Note 1)
− Continuous @ TA = 25°C
− Single Pulse (tp ≤ 10 ms)
Drain Current (Note 2)
− Continuous @ TA = 25°C
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
Operating and Storage Temperature
Range
VDSS
VGS
ID
IDM
ID
40
"20
5.8
29
4.6
V
V
Adc
Apk
Adc
PD
TJ, Tstg
2.0
1.29
−55 to +150
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 40 Vdc, VGS = 5.0 Vdc,
Vdc, Peak IL = 7.0 Apk,
L = 10 mH, RG = 25 W)
Thermal Resistance
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
EAS
RqJA
245 mJ
°C/W
62.5
97
Maximum Lead Temperature for
Soldering Purposes for 10 Sec
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1″ pad size, t ≤ 10 s
2. When surface mounted to an FR4 board using 1″ pad size, t = steady state
http://onsemi.com
VDSS
40 V
RDS(ON) Typ
27 mW @ VGS = 10 V
ID Max
5.8 A
N−Channel
D
D
GG
SS
8
1
SOIC−8
CASE 751
STYLE 11
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 D1 D2 D2
8
E6N04
AYWW G
G
1
S1 G1 S2 G2
E6N04 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMD6N04R2G
NVMD6N04R2G*
SOIC−8
(Pb−Free)
SOIC−8
(Pb−Free)
2500 / Tape &
Reel
2500 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 2
1
Publication Order Number:
NTMD6N04R2/D
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NTMD6N04, NVMD6N04
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mA)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 40 Vdc, VGS = 0 Vdc, TJ = 25°C)
(VDS = 40 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
V(BR)DSS
V(BR)DSS/TJ
IDSS
IGSS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
(VGS = 10 Vdc, ID = 5.8 Adc)
(VGS = 4.5 Vdc, ID = 3.9 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 5.8 Adc)
VGS(th)
VGS(th)/TJ
RDS(on)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 32 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 20 Vdc, ID = 5.8 A,
VGS = 10 V,
RG = 6 W)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 20 Vdc, ID = 5.8 A,
VGS = 4.5 V,
RG = 6 W)
Gate Charge
(VDS = 20 Vdc,
VGS = 10 Vdc,
ID = 5.8 A)
BODY−DRAIN DIODE RATINGS (Note 3)
Diode Forward On−Voltage
(IS = 1.7 Adc, VGS = 0 V)
(IS = 1.7 Adc, VGS = 0 V, TJ = 150°C)
Reverse Recovery Time
(IS = 1.7 A, VGS = 0 V,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
(IS = 1.7 A, dIS/dt = 100 A/ms, VGS = 0 V)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Qgs
Qgd
VSD
trr
ta
tb
QRR
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
Min
40
−
−
−
−
1.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ Max Unit
Vdc
47 −
45 − mV/°C
mAdc
− 1.0
− 10
nAdc
− "100
1.9
4.7
0.027
0.034
8.12
3.0
−
0.034
0.043
−
Vdc
mV/°C
W
Mhos
723 900 pF
156 225
53 75
10 18 ns
20 35
45 70
40 65
15 − ns
55 −
30 −
35 −
20 30 nC
2.5 −
5.5 −
0.76 1.1 Vdc
0.56 −
23 − ns
16 −
7−
20 − nC
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NTMD6N04, NVMD6N04
14
6 V − 10 V
12 4.0 V
3.8 V
10
TJ = 25°C
3.4 V
8 3.6 V
3.2 V
6
4 3.0 V
2
2.4 V
2.8 V
0 VGS = 2.6 V
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
0.2
0.15
20
18 VDS w 10 V
16
14
12
10
8 TJ = 100°C
6
4
TJ = 25°C
TJ = −55°C
2
0
1.5
2
2.5 3
3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
4
VGS = 10 V
TJ = 25°C
0.1
0.05
0
23456789
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
10
1.8
1.7 ID = 5.8 A
1.6 VGS = 10 V
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
−50 −25 0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. On Resistance Variation with
Temperature
10000
VGS = 0 V
1000
TJ = 150°C
100
TJ = 100°C
10
1
150 0 3 6 9 12 15 18 21 24 27 30 33 36 39 42
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. Drain−to−Source Leakage Current
vs. Voltage
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NTMD6N04R2G | Power MOSFET ( Transistor ) | ON Semiconductor |
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