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NVMFS4C01NT1G PDF даташит

Спецификация NVMFS4C01NT1G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NVMFS4C01NT1G
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NVMFS4C01NT1G Даташит, Описание, Даташиты
NVMFS4C01N
Power MOSFET
30 V, 0.9 mW, 319 A, Single N−Channel,
Logic Level, SO−8FL
Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS4C01NWF − Wettable Flanks Option for Enhanced Optical
Inspection
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent RqJC (Notes 1, 3)
Power Dissipation
RqJC (Notes 1, 3)
Steady
State
TC = 25°C
TC = 25°C
Continuous Drain Cur-
rent RqJA (Notes 1, 2,
3)
Power Dissipation
RqJA (Notes 1, 2, 3)
Steady
State
TA = 25°C
TA = 25°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
30
"20
319
161
49
PD 3.84
IDM
TJ, Tstg
900
−55 to
175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 110 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 35 A)
EAS 862 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
0.93 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
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V(BR)DSS
30 V
RDS(ON) MAX
0.9 mW @ 10 V
1.2 mW @ 4.5 V
D (5)
ID MAX
319 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
SD
S 4C01xx
S AYWZZ
GD
D
4C01N = Specific Device Code for
NVMFS4C01N
4C01WF= Specific Device Code of
NVMFS4C01NWF
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
ORDERING INFORMATION
Device
NVMFS4C01NT1G
Package
SO−8 FL
(Pb−Free)
Shipping
1500 /
Tape & Reel
NVMFS4C01NT3G
NVMFS4C01NWFT1G
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
1500 /
Tape & Reel
NVMFS4C01NWFT3G SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 1
1
Publication Order Number:
NVMFS4C01N/D









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NVMFS4C01NT1G Даташит, Описание, Даташиты
NVMFS4C01N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
30
16.3
V
mV/°C
VGS = 0 V,
VDS = 24 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = 20 V
1
mA
100
100 nA
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
Gate Resistance
CHARGES AND CAPACITANCES
gFS
RG
VGS = VDS, ID = 250 mA
VGS = 10 V
ID = 30 A
VGS = 4.5 V
ID = 30 A
VDS = 3 V, ID = 30 A
TA = 25 °C
1.3
5.8
0.71
0.94
183
1.0
2.2 V
mV/°C
0.9
mW
1.2
S
W
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 10 V, VDS = 15 V,
ID = 30 A
10144
5073
148
63
18
29
13
139
pF
nC
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
29
68
53
36
ns
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 10 A
TJ = 125°C
0.73 1.1
0.55
V
Reverse Recovery Time
tRR
87
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms, 43 ns
tb IS = 30 A
44
Reverse Recovery Charge
QRR
147 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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NVMFS4C01NT1G Даташит, Описание, Даташиты
NVMFS4C01N
TYPICAL CHARACTERISTICS
400
10 V
350
300
250
3.6 V
3.4 V
4.5 V
3.2 V
200 3.0 V
150
100 2.8 V
50
0
0.0
VGS = 2.6 V
0.5 1.0 1.5 2.0 2.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
3.0
400
350 VDS = 3 V
300
250
200 TJ = 25°C
150
100
50
0
1.5
TJ = 150°C
TJ = −55°C
2 2.5 3 3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
4
1.5
1.4 ID = 30 A
TJ = 25°C
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
3 4 5 6 7 8 9 10
VGS, GATE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.5
1.4 TJ = 25°C
1.3
1.2
1.1
1.0 VGS = 4.5 V
0.9
0.8
0.7 VGS = 10 V
0.6
0
50 100 150 200 250 300 350 400
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
VGS = 10 V
1.6 ID = 30 A
1.4
1.2
100000
10000
1000
TJ = 125°C
TJ = 100°C
1.0
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
TJ = 85°C
100
10
0
5 10 15 20 25 30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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Номер в каталогеОписаниеПроизводители
NVMFS4C01NT1GPower MOSFET ( Transistor )ON Semiconductor
ON Semiconductor

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