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PDF NVMFS4C01NT3G Data sheet ( Hoja de datos )
| Número de pieza | NVMFS4C01NT3G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NVMFS4C01N
Power MOSFET
30 V, 0.9 mW, 319 A, Single N−Channel,
Logic Level, SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• NVMFS4C01NWF − Wettable Flanks Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent RqJC (Notes 1, 3)
Power Dissipation
RqJC (Notes 1, 3)
Steady
State
TC = 25°C
TC = 25°C
Continuous Drain Cur-
rent RqJA (Notes 1, 2,
3)
Power Dissipation
RqJA (Notes 1, 2, 3)
Steady
State
TA = 25°C
TA = 25°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
30
"20
319
161
49
PD 3.84
IDM
TJ, Tstg
900
−55 to
175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 110 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 35 A)
EAS 862 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
0.93 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
0.9 mW @ 10 V
1.2 mW @ 4.5 V
D (5)
ID MAX
319 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
SD
S 4C01xx
S AYWZZ
GD
D
4C01N = Specific Device Code for
NVMFS4C01N
4C01WF= Specific Device Code of
NVMFS4C01NWF
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
ORDERING INFORMATION
Device
NVMFS4C01NT1G
Package
SO−8 FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
NVMFS4C01NT3G
NVMFS4C01NWFT1G
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
1500 /
Tape & Reel
NVMFS4C01NWFT3G SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 1
1
Publication Order Number:
NVMFS4C01N/D
1 page  
NVMFS4C01N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
10 0.2
0.1
0.05
1 0.02
0.01
0.1
RqJA = Steady State = 39°C/W
PCB Cu Area = 650 mm2
PCB Cu Thk = 2 oz
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
t, TIME (s)
Figure 12. Thermal Impedance (Junction−to−Ambient)
10
100 1000
1000
100
TJ(initial) = 25°C
10
TJ(initial) = 100°C
1
1.00E−04
1.00E−03
1.00E−02
TIME IN AVALANCHE (s)
Figure 13. Avalanche Characteristics
http://onsemi.com
5
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