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PDF NVMFS4C05NT1G Data sheet ( Hoja de datos )
| Número de pieza | NVMFS4C05NT1G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NVMFS4C05N
Power MOSFET
30 V, 116 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• NVMFS4C05NWF − Wettable Flanks Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Notes 1, 2 and 4)
TA = 25°C
TA = 80°C
VDSS
VGS
ID
30
±20
24.7
19.6
Power Dissipation
RqJA (Notes 1, 2
and 4)
TA = 25°C
PD
3.61
Continuous Drain
Current RqJC
(Notes 1, 2, 3
and 4)
Continuous Drain
Current RqJC
(Notes 1, 2, 3
and 4)
Steady
State
TC = 25°C
TC = 80°C
ID
116
92
Power Dissipation
RqJC (Notes 1, 2, 3
and 4)
TC = 25°C
PD
79
Pulsed Drain
Current
TA = 25°C, tp = 10 ms
IDM
174
Unit
V
V
A
W
A
W
A
Operating Junction and Storage
Temperature
TJ,
TSTG
−55 to
+175
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, IL = 29 Apk, L = 0.1 mH)
IS
EAS
72 A
42 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using 650 mm2, 2 oz Cu pad.
3. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
4. Continuous DC current rating. Maximum current for pulses as long as one
second is higher but dependent on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
3.4 mW @ 10 V
5.0 mW @ 4.5 V
D (5−8)
ID MAX
116 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1S
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
S 4C05xx
S AYWZZ
G
D
4C05N = Specific Device Code for
NVMFS4C05N
4C05WF= Specific Device Code of
NVMFS4C05NWF
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
D
D
ORDERING INFORMATION
Device
NVMFS4C05NT1G
Package
SO−8 FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
NVMFS4C05NT3G
NVMFS4C05NWFT1G
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
1500 /
Tape & Reel
NVMFS4C05NWFT3G SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 1
1
Publication Order Number:
NVMFS4C05N/D
1 page  
NVMFS4C05N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
10 20%
10%
5%
1 2%
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 12. Thermal Response
1
10 100 1000
120 1000
100
80 100
TA = 25°C
60
TA = 85°C
40 10
20
0
0 10 20 30 40 50 60 70 80
ID (A)
Figure 13. GFS vs. ID
1
1.E−06
1.E−05
1.E−04
1.E−03
PULSE WIDTH (SECONDS)
Figure 14. Avalanche Characteristics
http://onsemi.com
5
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