NVD5890NL PDF даташит
Спецификация NVD5890NL изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NVD5890NL |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
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NVD5890NL
Power MOSFET
40 V, 3.7 mW, 123 A, Single N−Channel
DPAK
Features
• Low RDS(on) to Minimize Conduction Losses
• MSL 1 @ 260°C
• 100% Avalanche Tested
• AEC Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent
3)
(RqJC)
(Notes
1
&
TC = 25°C
TC = 85°C
VDSS
VGS
ID
40
"20
123
95
V
V
A
Power Dissipation
(RqJC) (Note 1)
Continuous Drain Cur-
rent
3)
(RqJA)
(Notes
1,
2,
Steady
State
TC = 25°C
TA = 25°C
TA = 85°C
PD
ID
107 W
24 A
18.5
Power Dissipation
(RqJA) (Notes 1 & 2)
Pulsed Drain Current tp=10ms
Current Limited by Package
(Note 3)
TA = 25°C
TA = 25°C
TA = 25°C
PD
IDM
IDmaxPkg
4.0
400
100
W
A
A
Operating Junction and Storage Temperature
TJ, Tstg
−55 to
175
°C
Source Current (Body Diode)
IS 100 A
Single Pulse Drain−to−Source Avalanche
Energy (VGS = 10 V, L = 0.3 mH, IL(pk) =
46.2 A, RG = 25 W)
EAS 320 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and suty cycle.
http://onsemi.com
V(BR)DSS
40 V
RDS(ON) MAX
3.7 mW @ 10 V
5.5 mW @ 4.5 V
ID MAX
123 A
D
N−Channel
G
S
4
12
3
CASE 369C
DPAK
(Bent Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y = Year
WW = Work Week
5890NL = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 0
1
Publication Order Number:
NVD5890NL/D
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NVD5890NL
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient − Steady State (Note 2)
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
IDSS
IGSS
VGS = 0 V,
VDS = 40 V
TJ = 25°C
TJ = 150°C
VDS = 0 V, VGS = "20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 10 V, ID = 50 A
VGS = 4.5 V, ID = 50 A
VDS = 15 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
QG(TOT)
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 5)
VGS
= 0 V,
VDS
f
=
= 1.0
25 V
MHz,
VGS = 10 V, VDS = 15 V,
ID = 50 A
VGS = 4.5 V, VDS = 15 V,
ID = 50 A
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
tr
td(off)
VGS = 10 V, VDS = 20 V,
ID = 50 A, RG = 2.0 W
Fall Time
tf
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
Symbol
RqJC
RqJA
Value
1.4
37
Unit
°C/W
Min Typ Max Unit
40
40
V
mV/°C
1.0
100
"100
mA
nA
1.5 2.5 V
7.4 mV/°C
2.9 3.7 mW
4.4 5.5
16.3 S
4760
580
385
84
42
4.2
13.7
18.8
pF
nC
nC
12 ns
35
38
11
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NVD5890NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 50 A
0.86 1.2
V
VGS = 0 V,
IS = 20 A
TJ = 25°C
0.78 1.0
Reverse Recovery Time
Charge Time
Discharge Time
tRR
ta VGS = 0 V, dIs/dt = 100 A/ms,
tb IS = 50 A
35
19
16
ns
Reverse Recovery Charge
QRR
34 nC
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NVD5890N | Power MOSFET ( Transistor ) | ON Semiconductor |
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