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NVD5806N PDF даташит

Спецификация NVD5806N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NVD5806N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NVD5806N Даташит, Описание, Даташиты
NTD5806N, NVD5806N
Power MOSFET
40 V, 33 A, Single N−Channel, DPAK/IPAK
Features
Low RDS(on)
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable − NVD5806N
These Devices are Pb−Free and are RoHS Compliant
Applications
CCFL Backlight
DC Motor Control
Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 mS)
Continuous Drain
Current (RqJC)
(Note 1)
Power Dissipation
(RqJC) (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
40
±20
±30
33
23
40
67
−55 to
175
V
V
V
A
W
A
°C
Source Current (Body Diode)
IS 33 A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 28 A, L = 0.1 mH, VDS = 40 V)
EAS
39 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Junction−to−Case (Drain)
RqJC
Junction−to−Ambient − Steady State (Note 1) RqJA
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
Value
3.7
57.5
Unit
°C/W
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 6
1
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V(BR)DSS
40 V
RDS(on) MAX
26 mW @ 4.5 V
19 mW @ 10 V
D
ID MAX
33 A
N−CHANNEL MOSFET
G
S
4
4
12
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1
2
3
IPAK
CASE 369D
(Straight Lead DPAK)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
A = Assembly Location*
Y = Year
WW = Work Week
5806N = Device Code
G = Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTD5806N/D









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NVD5806N Даташит, Описание, Даташиты
NTD5806N, NVD5806N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
40 45.5
29.5
V
mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V,
VDS = 40 V
TJ = 25°C
TJ = 150°C
VDS = 0 V, VGS = ±20 V
1.0
100
±100
mA
nA
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
1.4 2.5 V
5.8 mV/°C
Drain−to−Source On Resistance
RDS(on)
CHARGES, CAPACITANCES AND GATE RESISTANCES
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 10 A
12.7 19 mW
17.8 26
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VGS = 10 V, VDS = 20 V,
ID = 30 A
860 pF
130
100
17 38 nC
0.95
3.4
4.5
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDD = 20 V,
ID = 30 A, RG = 2.5 W
VGS = 10 V, VDD = 20 V,
ID = 30 A, RG = 2.5 W
10.6 ns
93.7
14.2
4.3
8.0 ns
49
19.8
2.6
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
VSD
VGS = 0 V,
TJ = 25°C
IS = 10 A
TJ = 150°C
tRR
ta VGS = 0 V, dIs/dt = 100 A/ms,
tb IS = 30 A
0.86 1.2
V
0.69
18.8 ns
11.8
7.0
Reverse Recovery Charge
QRR
10.9 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
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NVD5806N Даташит, Описание, Даташиты
NTD5806N, NVD5806N
TYPICAL PERFORMANCE CHARACTERISTICS
70
10 V
60
TJ = 25°C
4.5 V
50
VGS = 7, 6, 5.8, 5.5, 5.2, 5 V
40
4.0 V
30
20
3.5 V
10
0
0 0.5 1 1.5
2 2.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
3
70
VDS 10 V
60
50
40
30
20 TJ = 100°C
TJ = 25°C
10
0 TJ = −55°C
23
4
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
6
0.021
0.019
ID = 15 A
TJ = 25°C
0.05
0.04
TJ = 25°C
0.017
0.015
0.03
0.02
VGS = 4.5 V
0.013
0.01
VGS = 10 V
0.011
0
4 5 6 7 8 9 10
10 20 30 40 50 60 70
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Drain Current
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
1.9 ID = 30 A
1.8 VGS = 10 V
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50 −25 0
10,000
VGS = 0 V
1000
100
25 50 75 100 125 150 175
10
2
12
TJ = 150°C
TJ = 100°C
22
32
42
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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