NTP5860N PDF даташит
Спецификация NTP5860N изготовлена «ON Semiconductor» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor». |
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Детали детали
Номер произв | NTP5860N |
Описание | N-Channel Power MOSFET / Transistor |
Производители | ON Semiconductor |
логотип |
7 Pages
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NTB5860N, NTP5860N,
NVB5860N
N-Channel Power MOSFET
60 V, 220 A, 3.0 mW
Features
• Low RDS(on)
• High Current Capability
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
• NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
Current, RqJC
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation,
RqJC
Steady
State
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Current Limited by Package
Operating and Storage Temperature Range
VDSS
VGS
ID
PD
IDM
IDMmax
TJ, Tstg
60
$20
220
156
283
660
130
−55 to
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.3 mH)
IS 130
EAS 735
Lead Temperature for Soldering
Purposes (1/8″ from Case for 10 Seconds)
TL 260
Unit
V
V
A
W
A
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) Steady State
RqJC
0.53 °C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
28
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 2
1
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V(BR)DSS
60 V
RDS(on) MAX
3.0 mW @ 10 V
ID MAX
220 A
D
G
S
N−CHANNEL MOSFET
4
4
12
3
12
3
TO−220AB
CASE 221A
STYLE 5
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTP
5860NG
AYWW
1
Gate
3
Source
NTB
5860NG
AYWW
1
Gate
2
Drain
3
Source
2
Drain
G = Pb−Free Device
A = Assembly Location*
Y = Year
WW = Work Week
*Could be one or two digit alpha or numeric code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTB5860N/D
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NTB5860N, NTP5860N, NVB5860N
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VDS = 0 V, ID = 250 mA
ID = 250 mA
Zero Gate Voltage Drain Current
Gate−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V
VDS = 60 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = $20 V
Gate Threshold Voltage
VGS(th)
Threshold Temperature Coefficient
VGS(th)/TJ
Drain−to−Source On−Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 75 A
VDS = 15 V, ID = 30 A
Input Capacitance
Ciss
Output Capacitance
Coss
Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VDS
=
25
f=
1V,MVHGzS
=
0
V,
VGS = 10 V, VDS = 48 V,
ID = 65 A
VGS = 10 V, VDD = 48 V,
ID = 65 A, RG = 2.5 W
Forward Diode Voltage
VSD
VISGS=
=0V
20 A
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
trr
Charge Time
Discharge Time
ta VGS = 0 V, IS = 65 A,
tb dIS/dt = 100 A/ms
Reverse Recovery Stored Charge
QRR
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min Typ Max Unit
60
5.0
V
mV/°C
1.0
100
$100
mA
nA
2.0 4.0 V
−10.1
mV/°C
2.5 3.0 mW
38 S
10760
1125
700
180
11
45
57
pF
nC
27 ns
117
66
150
0.76 1.1
0.63
55
29
26
76
Vdc
ns
nC
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NTB5860N, NTP5860N, NVB5860N
TYPICAL CHARACTERISTICS
350 VGS =
300 10 V
250
VGS = 6 V
TJ = 25°C
5.5 V
200
150
5.0 V
100
50
4.5 V
0
012345
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
350
VDS ≥ 10 V
300
250
200
150
100 TJ = 25°C
50
0
TJ = 125°C
TJ = −55°C
23 45
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
6
0.008
0.006
0.004
ID = 20 A
TJ = 25°C
0.0035
TJ = 25°C
0.0030
0.0025
VGS = 10 V
0.002
0.0020
0.000
4
6 8 10
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate Voltage
0.0020
10 30 50 70 90 110 130 150
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current
170
2.0
1.8
ID = 20 A
VGS = 10 V
1.6
100000
VGS = 0 V
TJ = 150°C
1.4
10000
1.2
1.0 TJ = 125°C
0.8
0.6
−50
−25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
175
1000
10 20 30 40 50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
60
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Номер в каталоге | Описание | Производители |
NTP5860N | N-Channel Power MOSFET / Transistor | ON Semiconductor |
NTP5860NL | N-Channel Power MOSFET / Transistor | ON Semiconductor |
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