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NVD5862N PDF даташит

Спецификация NVD5862N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NVD5862N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NVD5862N Даташит, Описание, Даташиты
NVD5862N
Power MOSFET
60 V, 5.7 mW, 98 A, Single N−Channel
Features
Low RDS(on) to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
Gate−to−Source Voltage
VGS
Continuous Drain Cur-
rent RqJC (Note 1)
Power Dissipation RqJC
(Note 1)
Continuous Drain Cur-
rent RqJA (Notes 1 & 2)
Power Dissipation RqJA
(Notes 1 & 2)
Pulsed Drain Current
Current Limited by
Package (Note 3)
TC = 25°C
Steady TC = 100°C
State TC = 25°C
TC = 100°C
TA = 25°C
Steady TA = 100°C
State TA = 25°C
TA = 100°C
TA = 25°C, tp = 10 ms
TA = 25°C
ID
PD
ID
PD
IDM
IDmaxpkg
60
"20
98
69
115
58
18
13
4.1
2.0
367
60
V
V
A
W
A
W
A
A
Operating Junction and Storage Temperature
TJ, Tstg − 55 to °C
175
Source Current (Body Diode)
IS 96 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 37 A, L = 0.3 mH, RG = 25 W)
EAS 205 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State (Drain)
RqJC
1.3 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
37
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as 1
second are higher but are dependent on pulse duration and duty cycle.
www.onsemi.com
V(BR)DSS
60 V
RDS(on)
5.7 mW @ 10 V
ID
98 A
D
N−Channel
G
S
4
12
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y = Year
WW = Work Week
V5862N = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
June, 2015 − Rev. 2
1
Publication Order Number:
NVD5862N/D









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NVD5862N Даташит, Описание, Даташиты
NVD5862N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
60
47
V
mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
IDSS
IGSS
VGS = 0 V,
VDS = 60 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
1.0
100
±100
mA
nA
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)
VGS(TH)/TJ
RDS(on)
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCES
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 48 A
VDS = 15 V, ID = 10 A
2.0 4.0 V
−9.7 mV/°C
4.4 5.7 mW
18 S
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Gate Resistance
RG
SWITCHING CHARACTERISTICS (Note 5)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VGS = 10 V, VDS = 48 V,
ID = 48 A
5050
500
300
82
5.2
24
27
0.6
6000
600
420
pF
nC
W
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDD = 48 V,
ID = 48 A, RG = 2.5 W
18 ns
70
35
60
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
VSD
VGS = 0 V,
TJ = 25°C
IS = 48 A
TJ = 100°C
tRR
ta VGS = 0 V, dIs/dt = 100 A/ms,
tb IS = 48 A
0.9 1.2 V
0.75
38 ns
20
18
Reverse Recovery Charge
QRR
40 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
5. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Order Number
Package
Shipping
NVD5862NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2









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NVD5862N Даташит, Описание, Даташиты
NVD5862N
TYPICAL CHARACTERISTICS
200
TJ = 25°C VGS = 10 V
160
120
80
6.2 V
6.0 V
5.8 V
5.6 V
40 5.2 V
0
01234
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
5
200
180 VDS 5 V
160
140
120
100
80
60 TJ = 25°C
40
20 TJ = 125°C
0
34
TJ = −55°C
56
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
7
0.030
0.025
ID = 45 A
TJ = 25°C
0.006
VGS = 10 V
TJ = 25°C
0.020
0.005
0.015
0.010
0.004
0.005
0.000
4
56789
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate Voltage
0.003
10 10 20 30 40 50 60 70 80 90 100
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current
2.2
2.0 ID = 45 A
VGS = 10 V
1.8
1.6
100000
VGS = 0 V
TJ = 150°C
1.4 10000
1.2
1.0 TJ = 125°C
0.8
0.6
−50
−25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1000
175 10 20 30 40 50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
60
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