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NVB60N06 PDF даташит

Спецификация NVB60N06 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NVB60N06
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NVB60N06 Даташит, Описание, Даташиты
NTB60N06, NVB60N06
Power MOSFET
60 V, 60 A, NChannel D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
AECQ101 Qualified and PPAP Capable NVB60N06
These Devices are PbFree and are RoHS Compliant
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DraintoSource Voltage
DraintoGate Voltage (RGS = 10 MW)
GatetoSource Voltage
Continuous
NonRepetitive (tpv10 ms)
Drain Current
Continuous @ TA = 25°C
Continuous @ TA = 100°C
Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
60
60
"20
"30
Vdc
Vdc
Vdc
ID
ID
IDM
PD
TJ, Tstg
60
42.3
180
150
1.0
2.4
55 to
+175
Adc
Apk
W
W/°C
W
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 75 Vdc, VGS = 10 Vdc, L = 0.3 mH
IL(pk) = 55 A, VDS = 60 Vdc)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
EAS 454 mJ
RqJC
RqJA
TL
°C/W
1.0
62.5
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in2).
http://onsemi.com
60 VOLTS, 60 AMPERES
RDS(on) = 14 mW
NChannel
D
G
S
MARKING
DIAGRAM
4
Drain
4
D2PAK
NTx60N06
2
CASE 418B
STYLE 2
AYWW
3
1
Gate
2
Drain
3
Source
NTx60N06
x
A
Y
WW
= Device Code
= P or B
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 0
1
Publication Order Number:
NTP60N06/D









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NVB60N06 Даташит, Описание, Даташиты
NTB60N06, NVB60N06
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 2)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
Static DraintoSource OnResistance (Note 2)
(VGS = 10 Vdc, ID = 30 Adc)
RDS(on)
Static DraintoSource OnVoltage (Note 2)
(VGS = 10 Vdc, ID = 60 Adc)
(VGS = 10 Vdc, ID = 30 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (Note 2) (VDS = 8.0 Vdc, ID = 12 Adc)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time
td(on)
Rise Time
TurnOff Delay Time
(VDD = 30 Vdc, ID = 60 Adc,
VGS = 10 Vdc, RG = 9.1 W) (Note 2)
tr
td(off)
Fall Time
tf
Gate Charge
(VDS = 48 Vdc, ID = 60 Adc,
VGS = 10 Vdc) (Note 2)
QT
Q1
Q2
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 60 Adc, VGS = 0 Vdc) (Note 2)
(IS = 45 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
Reverse Recovery Time
(IS = 60 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 2)
trr
ta
tb
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
QRR
Min Typ Max Unit
60 72.3
69.8
Vdc
mV/°C
mAdc
− − 1.0
− − 10
±100
nAdc
Vdc
2.0 2.85 4.0
8.0 mV/°C
mW
11.5 14
Vdc
0.715
1.01
1.43
35 mhos
2300
3220
pF
660 925
144 300
25.5 50 ns
180.7
360
94.5 200
142.5
300
62 81 nC
10.8
29.4
0.99 1.05 Vdc
0.87
64.9
ns
44.1
20.8
0.146
mC
http://onsemi.com
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NVB60N06 Даташит, Описание, Даташиты
NTB60N06, NVB60N06
120 VGS = 10 V
100 9 V
80 8 V
7V
6V
60 5.5 V
40 5 V
20 4.5 V
00 1 2 3 4 5
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
120
VDS 10 V
100
80
60
40
TJ = 25°C
20 TJ = 100°C
0 TJ = 55°C
34
56
7
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
8
0.026
0.022
VDS = 10 V
0.018
TJ = 100°C
0.026
0.022
VGS = 15 V
0.018
TJ = 100°C
0.014
TJ = 25°C
0.01
TJ = 55°C
0.006 0
20 40 60 80 100
ID, DRAIN CURRENT (AMPS)
120
Figure 3. OnResistance versus GatetoSource
Voltage
0.014
TJ = 25°C
0.01
0.006 0
TJ = 55°C
20 40 60 80 100
ID, DRAIN CURRENT (AMPS)
120
Figure 4. OnResistance versus Drain Current
and Gate Voltage
2.2
2
ID = 30 A
VGS = 10 V
1.8
1.6
1.4
1.2
1
0.8
0.6
50
25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
175
10,000 VGS = 0 V
1000
100
TJ = 150°C
TJ = 125°C
TJ = 100°C
10
0 10 20 30 40 50 60
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage Current
versus Voltage
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NVB60N06Power MOSFET ( Transistor )ON Semiconductor
ON Semiconductor

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