NVB60N06 PDF даташит
Спецификация NVB60N06 изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
|
Детали детали
Номер произв | NVB60N06 |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
9 Pages
No Preview Available ! |
NTB60N06, NVB60N06
Power MOSFET
60 V, 60 A, N−Channel D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• AEC−Q101 Qualified and PPAP Capable − NVB60N06
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
60
60
"20
"30
Vdc
Vdc
Vdc
ID
ID
IDM
PD
TJ, Tstg
60
42.3
180
150
1.0
2.4
−55 to
+175
Adc
Apk
W
W/°C
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 75 Vdc, VGS = 10 Vdc, L = 0.3 mH
IL(pk) = 55 A, VDS = 60 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
EAS 454 mJ
RqJC
RqJA
TL
°C/W
1.0
62.5
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in2).
http://onsemi.com
60 VOLTS, 60 AMPERES
RDS(on) = 14 mW
N−Channel
D
G
S
MARKING
DIAGRAM
4
Drain
4
D2PAK
NTx60N06
2
CASE 418B
STYLE 2
AYWW
3
1
Gate
2
Drain
3
Source
NTx60N06
x
A
Y
WW
= Device Code
= P or B
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 0
1
Publication Order Number:
NTP60N06/D
No Preview Available ! |
NTB60N06, NVB60N06
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 2)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
Static Drain−to−Source On−Resistance (Note 2)
(VGS = 10 Vdc, ID = 30 Adc)
RDS(on)
Static Drain−to−Source On−Voltage (Note 2)
(VGS = 10 Vdc, ID = 60 Adc)
(VGS = 10 Vdc, ID = 30 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (Note 2) (VDS = 8.0 Vdc, ID = 12 Adc)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 60 Adc,
VGS = 10 Vdc, RG = 9.1 W) (Note 2)
tr
td(off)
Fall Time
tf
Gate Charge
(VDS = 48 Vdc, ID = 60 Adc,
VGS = 10 Vdc) (Note 2)
QT
Q1
Q2
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 60 Adc, VGS = 0 Vdc) (Note 2)
(IS = 45 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
Reverse Recovery Time
(IS = 60 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 2)
trr
ta
tb
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
QRR
Min Typ Max Unit
60 72.3
− 69.8
Vdc
−
− mV/°C
mAdc
− − 1.0
− − 10
−
−
±100
nAdc
Vdc
2.0 2.85 4.0
− 8.0 − mV/°C
mW
− 11.5 14
Vdc
−
0.715
1.01
− 1.43 −
− 35 − mhos
−
2300
3220
pF
− 660 925
− 144 300
− 25.5 50 ns
−
180.7
360
− 94.5 200
−
142.5
300
− 62 81 nC
− 10.8 −
− 29.4 −
− 0.99 1.05 Vdc
− 0.87 −
− 64.9 −
ns
− 44.1 −
− 20.8 −
− 0.146 −
mC
http://onsemi.com
2
No Preview Available ! |
NTB60N06, NVB60N06
120 VGS = 10 V
100 9 V
80 8 V
7V
6V
60 5.5 V
40 5 V
20 4.5 V
00 1 2 3 4 5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
120
VDS ≥ 10 V
100
80
60
40
TJ = 25°C
20 TJ = 100°C
0 TJ = −55°C
34
56
7
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
8
0.026
0.022
VDS = 10 V
0.018
TJ = 100°C
0.026
0.022
VGS = 15 V
0.018
TJ = 100°C
0.014
TJ = 25°C
0.01
TJ = −55°C
0.006 0
20 40 60 80 100
ID, DRAIN CURRENT (AMPS)
120
Figure 3. On−Resistance versus Gate−to−Source
Voltage
0.014
TJ = 25°C
0.01
0.006 0
TJ = −55°C
20 40 60 80 100
ID, DRAIN CURRENT (AMPS)
120
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.2
2
ID = 30 A
VGS = 10 V
1.8
1.6
1.4
1.2
1
0.8
0.6
−50
−25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
175
10,000 VGS = 0 V
1000
100
TJ = 150°C
TJ = 125°C
TJ = 100°C
10
0 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
http://onsemi.com
3
Скачать PDF:
[ NVB60N06.PDF Даташит ]
Номер в каталоге | Описание | Производители |
NVB60N06 | Power MOSFET ( Transistor ) | ON Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |