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Спецификация NVD5865NL изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NVD5865NL |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
6 Pages
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NVD5865NL
Power MOSFET
60 V, 46 A, 16 mW, Single N−Channel
Features
• Low RDS(on) to Minimize Conduction Losses
• High Current Capability
• Avalanche Energy Specified
• AEC−Q101 Qualified
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent RqJC (Notes 1 & 3)
Power Dissipation
(Note 1)
RqJC
Continuous Drain Cur-
rent
3)
RqJA
(Notes
1,
2
&
Power
(Notes
Dissipation
1 & 2)
RqJA
Pulsed Drain Current
Current Limited by
Package (Note 3)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
TA = 25°C
Steady TA = 100°C
State TA = 25°C
TA = 100°C
TA = 25°C, tp = 10 ms
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
IDM
IDmaxpkg
60
"20
46
33
71
36
10
7.0
3.1
1.5
203
60
V
V
A
W
A
W
A
A
Operating Junction and Storage Temperature
TJ, Tstg
−55 to
175
°C
Source Current (Body Diode)
IS 46 A
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH)
EAS 36 mJ
IAS 27 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Drain) (Note 1)
RqJC
2.1 °C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
49
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
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V(BR)DSS
60 V
RDS(on)
16 mW @ 10 V
19 mW @ 4.5 V
D
ID
46 A
G
S
N−CHANNEL MOSFET
4
12
3
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y = Year
WW = Work Week
V5865L = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
January, 2013 − Rev. 2
1
Publication Order Number:
NVD5865NL/D
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NVD5865NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
IDSS
IGSS
VVDGSS
=
=
0 V,
60 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
Drain−to−Source on Resistance
Forward Transconductance
RDS(on)
RDS(on)
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCES
VGS = 10 V, ID = 19 A
VGS = 4.5 V, ID = 19 A
VDS = 15 V, ID = 19 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Ciss
Coss
Crss
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
Gate Resistance
RG
SWITCHING CHARACTERISTICS (Note 5)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VGS = 10 V, VDS = 48 V,
ID = 38 A
VGS = 4.5 V, VDS = 48 V,
ID = 38 A
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDD = 48 V,
ID = 38 A, RG = 2.5 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
VSD
VGS = 0 V,
TJ = 25°C
IS = 38 A
TJ = 125°C
tRR
ta VGS = 0 V, dIs/dt = 100 A/ms,
tb IS = 38 A
Reverse Recovery Charge
QRR
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
Min
60
1.0
Typ
55
5.6
13
16
15
1400
137
95
29
1.1
4
8
15
1.3
8.4
12.4
26
4.4
0.95
0.85
20
13
7
13
Max Unit
1.0
100
±100
V
mV/°C
mA
nA
2.0 V
mV/°C
16 mW
19 mW
S
pF
nC
nC
W
ns
1.2 V
ns
nC
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NVD5865NL
TYPICAL CHARACTERISTICS
80
70 VGS = 10 V
4.5 V
60
50
40
30
4V
3.8 V
3.6 V
3.4 V
3.2 V
TJ = 25°C
20 3 V
10 2.8 V
0 2.6 V
01234
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
5
80
70 VDS ≥ 10 V
60
50
40
30 TJ = 25°C
20
10
TJ = 125°C
TJ = −55°C
0
1234
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.030
0.025
ID = 38 A
TJ = 25°C
0.018
TJ = 25°C
0.016
VGS = 4.5 V
5
0.020
0.015
0.014
0.012
VGS = 10 V
0.010
2
3456789
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate Voltage
0.010
10 5
10 15 20 25 30 35
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current
40
2.2
2.0
ID = 38 A
VGS = 10 V
1.8
10000
VGS = 0 V
TJ = 150°C
1.6
1.4 1000
1.2 TJ = 125°C
1.0
0.8
0.6
−50
−25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100
10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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