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NVD5867NL PDF даташит

Спецификация NVD5867NL изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NVD5867NL
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NVD5867NL Даташит, Описание, Даташиты
NVD5867NL
Power MOSFET
60 V, 22 A, 39 mW, Single N−Channel
Features
Low RDS(on) to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent RqJC (Notes 1 & 3)
Power Dissipation RqJC
(Note 1)
Continuous Drain Cur-
rent RqJA (Notes 1, 2 &
3)
Power Dissipation RqJA
(Notes 1 & 2)
Pulsed Drain Current
Current Limited by
Package (Note 3)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
TA = 25°C
Steady TA = 100°C
State TA = 25°C
TA = 100°C
TA = 25°C, tp = 10 ms
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
IDM
IDmaxpkg
60
"20
22
16
43
21
6.0
4.0
3.3
1.7
85
30
V
V
A
W
A
W
A
A
Operating Junction and Storage Temperature
TJ, Tstg − 55 to °C
175
Source Current (Body Diode)
IS 36 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 19 A, L = 0.1 mH, RG = 25 W)
EAS 18 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Drain) (Note 1)
RqJC
3.5 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
45
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
60 V
RDS(on)
39 mW @ 10 V
50 mW @ 4.5 V
D
ID
22 A
G
S
N−CHANNEL MOSFET
4
12
3
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y = Year
WW = Work Week
V5867L = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 2
1
Publication Order Number:
NVD5867NL/D









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NVD5867NL Даташит, Описание, Даташиты
NVD5867NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
IDSS
IGSS
VGS = 0 V,
VDS = 60 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCES
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 11 A
VGS = 4.5 V, ID = 11 A
VDS = 15 V, ID = 11 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Gate Resistance
SWITCHING CHARACTERISTICS (Note 5)
Ciss
Coss
Crss
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
RG
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VGS = 10 V, VDS = 48 V,
ID = 22 A
VGS = 4.5 V, VDS = 48 V,
ID = 22 A
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
VGS = 10 V, VDD = 48 V,
ID = 22 A, RG = 2.5 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
VSD
VGS = 0 V,
TJ = 25°C
IS = 10 A
TJ = 125°C
tRR
ta VGS = 0 V, dIs/dt = 100 A/ms,
tb IS = 22 A
Reverse Recovery Charge
QRR
4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
5. Switching characteristics are independent of operating junction temperatures.
Min
60
1.5
Typ Max Unit
V
60 mV/°C
1.0
100
±100
mA
nA
1.8 2.5
V
5.2 mV/°C
26 39 mW
33 50
8.0 S
675 pF
68
47
15 nC
1.0
2.2
4.3
7.6 nC
1.3 W
6.5 ns
12.6
18.2
2.4
0.87 1.2
V
0.78
17 ns
13
4.0
12 nC
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NVD5867NL Даташит, Описание, Даташиты
NVD5867NL
TYPICAL PERFORMANCE CURVES
40
10V
35
4.5 V
TJ = 25°C
4V
30
3.8 V
25
3.6 V
20
3.4 V
15
3.2 V
10
3.0 V
5
2.8 V
0
0 123 45
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
40
VDS 10 V
35
30
25
20
15 TJ = 125°C
10 TJ = 25°C
5
TJ = −55°C
0
23
4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
5
0.060
0.050
ID = 22 A
TJ = 25°C
0.040
TJ = 25°C
0.035
VGS = 4.5 V
0.040
0.030
0.030
0.025
VGS = 10 V
0.020
3
4567
8 9 10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.020
5 10 15 20
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.4
2.2
ID = 22 A
VGS = 10 V
2.0
1.8
10000
VGS = 0 V
1000
TJ = 150°C
1.6
1.4
1.2 100 TJ = 125°C
1.0
0.8
0.6 10
−50 −25 0 25 50 75 100 125 150 175
10
20 30
40
50 60
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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