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NTD20N06L PDF даташит

Спецификация NTD20N06L изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTD20N06L
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTD20N06L Даташит, Описание, Даташиты
NTD20N06L, NTDV20N06L
Power MOSFET
20 A, 60 V, Logic Level, N−Channel
DPAK/IPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
AEC Q101 Qualified − NTDV20N06L
These Devices are Pb−Free and are RoHS Compliant
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
60 Vdc
60 Vdc
Vdc
±15
±20
20 Adc
10
60 Apk
60 W
0.40 W/°C
1.88 W
1.36 W
Operating and Storage Temperature Range
TJ, Tstg − 55 to
+175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
L = 1.0 mH, IL(pk) = 16 A, VDS = 60 Vdc)
EAS 128 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
°C/W
2.5
80
110
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1 in pad size, (Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using recommended pad size,
(Cu Area 0.412 in2).
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 4
1
http://onsemi.com
V(BR)DSS
60 V
RDS(on) TYP
39 mW@5.0 V
ID MAX
20 A
(Note 1)
D
N−Channel
G
S
4
4
12
3
DPAK
CASE 369C
STYLE 2
1
2
3
IPAK
CASE 369D
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
1
Gate
2
Drain
3
Source
12 3
Gate Drain Source
A
Y
WW
20N6L
G
= Assembly Location*
= Year
= Work Week
= Device Code
= Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Publication Order Number:
NTD20N06L/D









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NTD20N06L Даташит, Описание, Даташиты
NTD20N06L, NTDV20N06L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60 71.3
− 71.2
Vdc
− mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
mAdc
− − 1.0
− − 10
±100
nAdc
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Vdc
1.0 1.6 2.0
− 4.6 − mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 10 Adc)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 20 Adc)
(VGS = 5.0 Vdc, ID = 10 Adc, TJ = 150°C)
Forward Transconductance (Note 3) (VDS = 4.0 Vdc, ID = 10 Adc)
DYNAMIC CHARACTERISTICS
RDS(on)
VDS(on)
gFS
mW
− 39 48
Vdc
− 0.81 1.66
− 0.72 −
− 17.5 − mhos
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4)
Ciss
Coss
Crss
− 707 990 pF
− 224 320
− 72 105
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(VDD = 30 Vdc, ID = 20 Adc,
VGS = 5.0 Vdc,
RG = 9.1 W) (Note 3)
(VDS = 48 Vdc, ID = 20 Adc,
VGS = 5.0 Vdc) (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
QT
Q1
Q2
− 9.6 20 ns
− 98 200
− 25 50
− 62 120
− 16.6 32
nC
− 5.5 −
− 8.5 −
Forward On−Voltage
(IS = 20 Adc, VGS = 0 Vdc) (Note 3)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
− 0.97 1.2 Vdc
− 0.85 −
Reverse Recovery Time
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
trr
− 42 −
ns
ta − 30 −
tb − 12 −
Reverse Recovery Stored Charge
QRR
− 0.066 −
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NTD20N06LG
Package
DPAK
(Pb−Free)
Shipping
75 Units / Rail
NTD20N06L−1G
NTD20N06LT4G
IPAK (Straight Lead)
(Pb−Free)
DPAK
(Pb−Free)
75 Units / Rail
2500 / Tape & Reel
NTDV20N06LT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2









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NTD20N06L Даташит, Описание, Даташиты
NTD20N06L, NTDV20N06L
40
VGS = 10 V
8V
30
20
5V
6V
4.5 V
4V
3.5 V
10
3V
0
01 234
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
5
40
VDS 10 V
30
20
10
0
1.6
TJ = 25°C
TJ = 100°C
TJ = −55°C
2.4 3.2 4
4.8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
5.6
0.085
0.075
VGS = 5 V
0.065
TJ = 100°C
0.055
0.045
TJ = 25°C
0.035
0.025
TJ = −55°C
0.015
0
10 20 30
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
0.085
0.075
VGS = 10 V
0.065
0.055
0.045
0.035
TJ = 100°C
TJ = 25°C
0.025
TJ = −55°C
0.015
40 0 10 20 30 40
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
ID = 10 A
1.8 VGS = 5 V
1.6
1.4
10000
VGS = 0 V
1000
TJ = 150°C
1.2
100
1
0.8 TJ = 100°C
0.6
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10
0 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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