NVD5490NL PDF даташит
Спецификация NVD5490NL изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NVD5490NL |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
6 Pages
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NVD5490NL
Power MOSFET
60 V, 64 mW, 17 A, Single N−Channel
Features
• Low RDS(on) to Minimize Conduction Losses
• High Current Capability
• Avalanche Energy Specified
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent RqJC (Notes 1 & 3)
Power Dissipation
(Note 1)
RqJC
Continuous Drain Cur-
rent
3)
RqJA
(Notes
1,
2
&
Power
(Notes
Dissipation
1 & 2)
RqJA
Pulsed Drain Current
Current Limited by
Package (Note 3)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
TA = 25°C
Steady TA = 100°C
State TA = 25°C
TA = 100°C
TA = 25°C, tp = 10 ms
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
IDM
IDmaxpkg
60
"20
17
12
49
24
5.0
3.0
3.4
1.7
71
30
V
V
A
W
A
W
A
A
Operating Junction and Storage Temperature
TJ, Tstg
−55 to
175
°C
Source Current (Body Diode)
IS 41 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL(pk) = 9.0 A, L = 1.0 mH, RG = 25 W)
EAS 41 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State (Drain)
RqJC
3.1 °C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
44
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
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V(BR)DSS
60 V
RDS(on)
64 mW @ 10 V
85 mW @ 4.5 V
D (2,4)
ID
17 A
G (1)
N−Channel
S (3)
4
12
3
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y
WW
5490L
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 1
1
Publication Order Number:
NVD5490NL/D
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NVD5490NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V(BR)DSS
IDSS
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 60 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = "20 V
Gate Threshold Voltage
Drain−to−Source On Resistance
VGS(TH)
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 9 A
VGS = 4.5 V, ID = 9 A
VDS = 15 V, ID = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Gate Resistance
RG
SWITCHING CHARACTERISTICS (Note 5)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VDS = 48 V,
ID = 9 A
VGS = 4.5 V
VGS = 10 V
VDS = 48 V, ID = 9 A
VGS = 10 V
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VDS = 48 V, VGS = 4.5 V,
ID = 9 A, RG = 10 W
VDS = 48 V, VGS = 10 V,
ID = 9 A, RG = 10 W
Forward Diode Voltage
VSD
VGISS==90AV,
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
trr
Charge Time
Discharge Time
ta IS = 20.5 Adc, VGS = 0 Vdc,
tb dIS/dt = 100 A/ms
Reverse Recovery Stored Charge
QRR
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
Min
60
1.5
Typ Max Unit
1.0
10
"100
V
mA
nA
2.5 V
46 64 mW
66 85
15 S
365 pF
91
46
7.8 nC
14
0.4 nC
1.5 nC
5.4 nC
7W
9.4 ns
57
24
35
6.7 ns
17
34
34
0.97 1.2
V
0.87
25 ns
20
5.0
27 nC
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NVD5490NL
30
TJ = 25°C
25
VGS = 10 V
20
15
VGS = 7.5 V
TYPICAL CHARACTERISTICS
VGS = 4.5 V
VGS = 4.0 V
30
VDS ≥ 5 V
25
20
15
10 VGS = 3.6 V
5
VGS = 3.0 V
0
0123 45
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
10
5
0
2
TJ = 25°C
TJ = 100°C
TJ = −55°C
34
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
5
0.13
0.12
0.11
0.10
ID = 17 A
TJ = 25°C
0.09
0.08
0.07
0.06
0.05
0.04
4 5 6 7 8 9 10
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.10
0.09
0.08
TJ = 25°C
VGS = 4.5 V
0.07
0.06
0.05
VGS = 10 V
0.04
5 10 15 20
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.5
ID = 9 A
VGS = 10 V
2.0
100,000
VGS = 0 V
10,000
TJ = 175°C
1.5 1000
TJ = 125°C
1.0 100
0.5
−50 −25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
175
10
10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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