DataSheet26.com

NVD5490NL PDF даташит

Спецификация NVD5490NL изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NVD5490NL
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

6 Pages
scroll

No Preview Available !

NVD5490NL Даташит, Описание, Даташиты
NVD5490NL
Power MOSFET
60 V, 64 mW, 17 A, Single NChannel
Features
Low RDS(on) to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AECQ101 Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain Cur-
rent RqJC (Notes 1 & 3)
Power Dissipation
(Note 1)
RqJC
Continuous Drain Cur-
rent
3)
RqJA
(Notes
1,
2
&
Power
(Notes
Dissipation
1 & 2)
RqJA
Pulsed Drain Current
Current Limited by
Package (Note 3)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
TA = 25°C
Steady TA = 100°C
State TA = 25°C
TA = 100°C
TA = 25°C, tp = 10 ms
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
IDM
IDmaxpkg
60
"20
17
12
49
24
5.0
3.0
3.4
1.7
71
30
V
V
A
W
A
W
A
A
Operating Junction and Storage Temperature
TJ, Tstg
55 to
175
°C
Source Current (Body Diode)
IS 41 A
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL(pk) = 9.0 A, L = 1.0 mH, RG = 25 W)
EAS 41 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoCase Steady State (Drain)
RqJC
3.1 °C/W
JunctiontoAmbient Steady State (Note 2)
RqJA
44
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
60 V
RDS(on)
64 mW @ 10 V
85 mW @ 4.5 V
D (2,4)
ID
17 A
G (1)
NChannel
S (3)
4
12
3
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y
WW
5490L
G
= Year
= Work Week
= Device Code
= PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
November, 2012 Rev. 1
1
Publication Order Number:
NVD5490NL/D









No Preview Available !

NVD5490NL Даташит, Описание, Даташиты
NVD5490NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
Zero Gate Voltage Drain Current
V(BR)DSS
IDSS
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 4)
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 60 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = "20 V
Gate Threshold Voltage
DraintoSource On Resistance
VGS(TH)
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 9 A
VGS = 4.5 V, ID = 9 A
VDS = 15 V, ID = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Gate Resistance
RG
SWITCHING CHARACTERISTICS (Note 5)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VDS = 48 V,
ID = 9 A
VGS = 4.5 V
VGS = 10 V
VDS = 48 V, ID = 9 A
VGS = 10 V
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VDS = 48 V, VGS = 4.5 V,
ID = 9 A, RG = 10 W
VDS = 48 V, VGS = 10 V,
ID = 9 A, RG = 10 W
Forward Diode Voltage
VSD
VGISS==90AV,
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
trr
Charge Time
Discharge Time
ta IS = 20.5 Adc, VGS = 0 Vdc,
tb dIS/dt = 100 A/ms
Reverse Recovery Stored Charge
QRR
4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
5. Switching characteristics are independent of operating junction temperatures.
Min
60
1.5
Typ Max Unit
1.0
10
"100
V
mA
nA
2.5 V
46 64 mW
66 85
15 S
365 pF
91
46
7.8 nC
14
0.4 nC
1.5 nC
5.4 nC
7W
9.4 ns
57
24
35
6.7 ns
17
34
34
0.97 1.2
V
0.87
25 ns
20
5.0
27 nC
http://onsemi.com
2









No Preview Available !

NVD5490NL Даташит, Описание, Даташиты
NVD5490NL
30
TJ = 25°C
25
VGS = 10 V
20
15
VGS = 7.5 V
TYPICAL CHARACTERISTICS
VGS = 4.5 V
VGS = 4.0 V
30
VDS 5 V
25
20
15
10 VGS = 3.6 V
5
VGS = 3.0 V
0
0123 45
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
10
5
0
2
TJ = 25°C
TJ = 100°C
TJ = 55°C
34
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
5
0.13
0.12
0.11
0.10
ID = 17 A
TJ = 25°C
0.09
0.08
0.07
0.06
0.05
0.04
4 5 6 7 8 9 10
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. OnResistance vs. GatetoSource
Voltage
0.10
0.09
0.08
TJ = 25°C
VGS = 4.5 V
0.07
0.06
0.05
VGS = 10 V
0.04
5 10 15 20
ID, DRAIN CURRENT (A)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
2.5
ID = 9 A
VGS = 10 V
2.0
100,000
VGS = 0 V
10,000
TJ = 175°C
1.5 1000
TJ = 125°C
1.0 100
0.5
50 25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
175
10
10 20 30 40 50 60
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage Current
vs. Voltage
http://onsemi.com
3










Скачать PDF:

[ NVD5490NL.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NVD5490NLPower MOSFET ( Transistor )ON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск