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PDF NVF3055L108 Data sheet ( Hoja de datos )
| Número de pieza | NVF3055L108 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTF3055L108,
NVF3055L108
Power MOSFET
3.0 A, 60 V, Logic Level, N−Channel
SOT−223
Designed for low voltage, high speed switching applications in power
supplies, converters and power motor controls and bridge circuits.
Features
• NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
VDSS
60
Drain−to−Gate Voltage (RGS = 1.0 MW)
VDGR
60
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 10 ms)
VGS ± 15
± 20
Drain Current
− Continuous @ TA = 25°C (Note 1)
− Continuous @ TA = 100°C (Note 2)
− Single Pulse (tp ≤ 10 ms)
ID 3.0
ID 1.4
IDM 9.0
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Derate above 25°C
PD 2.1
1.3
0.014
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg − 55
to 175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc)
Thermal Resistance
−Junction−to−Ambient (Note 1)
−Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
EAS
RqJA
RqJA
TL
74 mJ
°C/W
66
75
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.
(Cu. Area 1 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2 oz. (Cu. Area 0.272 in2).
http://onsemi.com
3.0 A, 60 V
RDS(on) = 120 mW
N−Channel
D
G
S
4
SOT−223
1
2
3
CASE 318E
STYLE 3
MARKING DIAGRAM
3055L = Device Code
A = Assembly Location
Y = Year
AYW
3055LG
G
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
4 Drain
123
Gate Drain Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 8
1
Publication Order Number:
NTF3055L108/D
1 page  
NTF3055L108, NVF3055L108
TYPICAL ELECTRICAL CHARACTERISTICS
100
D = 0.5
0.2
10 0.1
0.05
0.02
1
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
Figure 13. Thermal Response
1
10 100 1000
ORDERING INFORMATION
Device
Package
Shipping†
NTF3055L108T1G
SOT−223 (TO−261)
(Pb−Free)
1000 / Tape & Reel
NVF3055L108T1G
SOT−223 (TO−261)
(Pb−Free)
1000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NVF3055L108.PDF ] | |
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