NVB6411AN PDF даташит
Спецификация NVB6411AN изготовлена «ON Semiconductor» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor». |
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Детали детали
Номер произв | NVB6411AN |
Описание | N-Channel Power MOSFET / Transistor |
Производители | ON Semiconductor |
логотип |
7 Pages
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NTB6411AN, NTP6411AN,
NVB6411AN
N-Channel Power MOSFET
100 V, 77 A, 14 mW
Features
• Low RDS(on)
• High Current Capability
• 100% Avalanche Tested
• NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
Current RqJC
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation
RqJC
Steady TC = 25°C
State
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Range
VDSS
VGS
ID
PD
IDM
TJ, Tstg
100
$20
77
54
217
285
−55 to
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) =
56 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
IS
EAS
TL
77
470
260
Unit
V
V
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) Steady State
RqJC
0.69 °C/W
Junction−to−Ambient (Note 1)
RqJA
33
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 2
1
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V(BR)DSS
100 V
RDS(ON) MAX
14 mW @ 10 V
ID MAX
(Note 1)
77 A
N−Channel
D
G
S
4
12
3
TO−220AB
CASE 221A
STYLE 5
4
12
3
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
Drain
NTP
6411ANG
AYWW
1
Gate
3
Source
NTB
6411ANG
AYWW
1
Gate
2
Drain
3
Source
2
Drain
6411AN = Specific Device Code
G = Pb−Free Device
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTB6411AN/D
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NTB6411AN, NTP6411AN, NVB6411AN
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temper-
ature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
100
113
V
mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V,
VDS = 100 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = $20 V
1.0
100
$100
mA
nA
Gate Threshold Voltage
VGS(th)
Negative Threshold Temperature Coefficient
VGS(th)/TJ
Drain−to−Source On−Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 72 A
VDS = 5 V, ID = 10 A
2.0 4.0 V
8.6 mV/°C
12.7 14
mW
24 S
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
Gate Resistance
RG
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VGS = 10 V, VDS = 80 V,
ID = 72 A
VGS = 10 V, VDD = 80 V,
ID = 72 A, RG = 6.2 W
3700
550
200
100
4.0
16
47
5.2
3.1
16
144
107
157
pF
nC
V
W
ns
Forward Diode Voltage
VSD
IS = 72 A
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
trr
Charge Time
Discharge Time
ta VGS = 0 V, IS = 72 A,
tb dIS/dt = 100 A/ms
Reverse Recovery Charge
QRR
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
0.92 1.3
0.86
94
64
30
330
V
ns
nC
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NTB6411AN, NTP6411AN, NVB6411AN
160
TJ = 25°C
140
120
100
10 V
7.5 V
6.5 V
6.0 V
80 5.6 V
60
40 5.0 V
20 VGS = 4.4 V
0
01234
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
5
0.035
ID = 72 A
TJ = 25°C
0.025
0.015
160
140 VDS w 10 V
120
100
80
60
TJ = 25°C
40 TJ = 125°C
20 TJ = −55°C
0
234567
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.04
VGS = 10 V
0.03
TJ = 175°C
TJ = 125°C
0.02
0.01
TJ = 25°C
TJ = −55°C
8
0.005
5
6789
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Region versus Gate Voltage
10
0
10 20 30 40 50 60 70 80
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Temperature
3
ID = 72 A
VGS = 10 V
2.5
100000
VGS = 0 V
2
10000
TJ = 150°C
1.5
TJ = 125°C
1
0.5
−50 −25 0
1000
25 50 75 100 125 150 175
10 20 30 40 50 60 70 80 90 100
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
versus Voltage
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