|
|
PDF NVD6824NLT4G Data sheet ( Hoja de datos )
| Número de pieza | NVD6824NLT4G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NVD6824NLT4G (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
NVD6824NL
Power MOSFET
100 V, 20 mW, 41 A, Single N−Channel
Features
• Low RDS(on) to Minimize Conduction Losses
• High Current Capability
• Avalanche Energy Specified
• AEC−Q101 Qualified
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent RqJC (Note 1)
Power Dissipation
(Note 1)
RqJC
Continuous Drain Cur-
rent RqJA (Notes 1 & 2)
Power
(Notes
Dissipation
1 & 2)
RqJA
Pulsed Drain Current
Current Limited by
Package (Note 3)
TC = 25°C
Steady TC = 100°C
State TC = 25°C
TC = 100°C
TA = 25°C
Steady TA = 100°C
State TA = 25°C
TA = 100°C
TA = 25°C, tp = 10 ms
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
IDM
IDmaxpkg
100
"20
41
29
90
45
8.5
6.0
3.9
1.9
238
60
V
V
A
W
A
W
A
A
Operating Junction and Storage Temperature
TJ, Tstg
−55 to
175
°C
Source Current (Body Diode)
IS 41 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V,
IL(pk) = 40 A, L = 0.1 mH, RG = 25 W)
EAS 80 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State (Drain)
RqJC
1.7 °C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
100 V
RDS(on)
20 mW @ 10 V
23 mW @ 4.5 V
D
ID
41 A
N−Channel
G
S
4
12
3
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y
WW
6824L
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NVD6824NLT4G DPAK 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 1
1
Publication Order Number:
NVD6824NL/D
1 page  
10
1 Duty Cycle = 0.5
0.20
0.10
0.1 0.05
0.02
0.01
Single Pulse
0.01
0.000001 0.00001
NVD6824NL
TYPICAL CHARACTERISTICS
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 12. Thermal Response
0.1
1 10
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NVD6824NLT4G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NVD6824NLT4G | Power MOSFET ( Transistor ) | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |