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NVMS5P02R2G PDF даташит

Спецификация NVMS5P02R2G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NVMS5P02R2G
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NVMS5P02R2G Даташит, Описание, Даташиты
NTMS5P02, NVMS5P02
Power MOSFET
-5.4 Amps, -20 Volts
PChannel EnhancementMode
Single SOIC8 Package
Features
High Density Power MOSFET with Ultra Low RDS(on)
Providing Higher Efficiency
Miniature SOIC8 Surface Mount Package Saves Board Space
Diode Exhibits High Speed with Soft Recovery
IDSS Specified at Elevated Temperature
DraintoSource Avalanche Energy Specified
Mounting Information for the SOIC8 Package is Provided
These Devices are PbFree and are RoHS Compliant
NVMS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
Applications
Power Management in Portable and BatteryPowered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
http://onsemi.com
VDSS
20 V
RDS(ON) TYP
26 mW @ 4.5 V
ID MAX
5.4 A
Single PChannel
D
G
8
1
SOIC8
CASE 751
STYLE 13
S
MARKING DIAGRAM &
PIN ASSIGNMENT
D D DD
8
E5P02x
AYWW G
G
1
NC S S G
E5P02 = Specific Device Code
x = Blank or S
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMS5P02R2G
NVMS5P02R2G
Package
Shipping
SOIC8 2500 / Tape & Reel
(PbFree)
SOIC8 2500 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
© Semiconductor Components Industries, LLC, 2012
December, 2012 Rev. 3
1
Publication Order Number:
NTMS5P02R2/D









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NVMS5P02R2G Даташит, Описание, Даташиты
NTMS5P02, NVMS5P02
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
DraintoGate Voltage (RGS = 1.0 mW)
GatetoSource Voltage Continuous
Thermal Resistance
JunctiontoAmbient (Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Thermal Resistance
JunctiontoAmbient (Note 2)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Thermal Resistance
JunctiontoAmbient (Note 3)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Operating and Storage Temperature Range
Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 8.5 Apk, L = 10 mH, RG = 25 W)
VDSS
VDGR
VGS
RPqDJA
ID
ID
PD
ID
IDM
RPqDJA
ID
ID
PD
ID
IDM
RPqDJA
ID
ID
PD
ID
IDM
TJ, Tstg
EAS
20 V
20 V
±10 V
50
2.5
7.05
5.62
1.2
4.85
28
°C/W
W
A
A
W
A
A
85
1.47
5.40
4.30
0.7
3.72
20
°C/W
W
A
A
W
A
A
159
0.79
3.95
3.15
0.38
2.75
12
55 to +150
360
°C/W
W
A
A
W
A
A
°C
mJ
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Mounted onto a 2square FR4 Board (1sq. 2 oz Cu 0.06thick single sided), t 10 seconds.
2. Mounted onto a 2square FR4 Board (1sq. 2 oz Cu 0.06thick single sided), t = steady state.
3. Minimum FR4 or G10 PCB, t = Steady State.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
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NVMS5P02R2G Даташит, Описание, Даташиты
NTMS5P02, NVMS5P02
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 5)
Characteristic
Symbol
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 25°C)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 25°C)
GateBody Leakage Current
(VGS = 10 Vdc, VDS = 0 Vdc)
GateBody Leakage Current
(VGS = +10 Vdc, VDS = 0 Vdc)
IDSS
IGSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
Static DraintoSource OnState Resistance
(VGS = 4.5 Vdc, ID = 5.4 Adc)
(VGS = 2.5 Vdc, ID = 2.7 Adc)
Forward Transconductance (VDS = 9.0 Vdc, ID = 5.4 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Notes 6 & 7)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDD = 16 Vdc, ID = 1.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 W)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDD = 16 Vdc, ID = 5.4 Adc,
VGS = 4.5 Vdc,
RG = 6.0 W)
Total Gate Charge
GateSource Charge
GateDrain Charge
(VDS = 16 Vdc,
VGS = 4.5 Vdc,
ID = 5.4 Adc)
BODYDRAIN DIODE RATINGS (Note 6)
Diode Forward OnVoltage
(IS = 5.4 Adc, VGS = 0 V)
(IS = 5.4 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 5.4 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
5. Handling precautions to protect against electrostatic discharge is mandatory.
6. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qtot
Qgs
Qgd
VSD
trr
ta
tb
QRR
Min
20
0.65
Typ
15
0.2
0.9
2.9
0.026
0.037
15
1375
510
200
18
25
70
55
22
70
65
90
20
4.0
7.0
0.95
0.72
40
20
20
0.03
Max Unit
1.0
10
100
100
Vdc
mV/°C
mAdc
nAdc
nAdc
1.25
0.033
0.048
Vdc
mV/°C
W
Mhos
1900
900
380
pF
35 ns
50
125
100
ns
35 nC
1.25
75
Vdc
ns
mC
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NVMS5P02R2GPower MOSFET ( Transistor )ON Semiconductor
ON Semiconductor

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