NVMS5P02R2G PDF даташит
Спецификация NVMS5P02R2G изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NVMS5P02R2G |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
7 Pages
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NTMS5P02, NVMS5P02
Power MOSFET
-5.4 Amps, -20 Volts
P−Channel Enhancement−Mode
Single SOIC−8 Package
Features
• High Density Power MOSFET with Ultra Low RDS(on)
Providing Higher Efficiency
• Miniature SOIC−8 Surface Mount Package − Saves Board Space
• Diode Exhibits High Speed with Soft Recovery
• IDSS Specified at Elevated Temperature
• Drain−to−Source Avalanche Energy Specified
• Mounting Information for the SOIC−8 Package is Provided
• These Devices are Pb−Free and are RoHS Compliant
• NVMS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
http://onsemi.com
VDSS
−20 V
RDS(ON) TYP
26 mW @ −4.5 V
ID MAX
−5.4 A
Single P−Channel
D
G
8
1
SOIC−8
CASE 751
STYLE 13
S
MARKING DIAGRAM &
PIN ASSIGNMENT
D D DD
8
E5P02x
AYWW G
G
1
NC S S G
E5P02 = Specific Device Code
x = Blank or S
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMS5P02R2G
NVMS5P02R2G
Package
Shipping†
SOIC−8 2500 / Tape & Reel
(Pb−Free)
SOIC−8 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
© Semiconductor Components Industries, LLC, 2012
December, 2012 − Rev. 3
1
Publication Order Number:
NTMS5P02R2/D
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NTMS5P02, NVMS5P02
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 mW)
Gate−to−Source Voltage − Continuous
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Thermal Resistance −
Junction−to−Ambient (Note 3)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C
(VDD = −20 Vdc, VGS = −5.0 Vdc, Peak IL = −8.5 Apk, L = 10 mH, RG = 25 W)
VDSS
VDGR
VGS
RPqDJA
ID
ID
PD
ID
IDM
RPqDJA
ID
ID
PD
ID
IDM
RPqDJA
ID
ID
PD
ID
IDM
TJ, Tstg
EAS
−20 V
−20 V
±10 V
50
2.5
−7.05
−5.62
1.2
−4.85
−28
°C/W
W
A
A
W
A
A
85
1.47
−5.40
−4.30
0.7
−3.72
−20
°C/W
W
A
A
W
A
A
159
0.79
−3.95
−3.15
0.38
−2.75
−12
−55 to +150
360
°C/W
W
A
A
W
A
A
°C
mJ
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t = steady state.
3. Minimum FR−4 or G−10 PCB, t = Steady State.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
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NTMS5P02, NVMS5P02
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 5)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = −250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = −16 Vdc, VGS = 0 Vdc, TJ = 25°C)
(VDS = −16 Vdc, VGS = 0 Vdc, TJ = 125°C)
(VDS = −20 Vdc, VGS = 0 Vdc, TJ = 25°C)
Gate−Body Leakage Current
(VGS = −10 Vdc, VDS = 0 Vdc)
Gate−Body Leakage Current
(VGS = +10 Vdc, VDS = 0 Vdc)
IDSS
IGSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = −250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−State Resistance
(VGS = −4.5 Vdc, ID = −5.4 Adc)
(VGS = −2.5 Vdc, ID = −2.7 Adc)
Forward Transconductance (VDS = −9.0 Vdc, ID = −5.4 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = −16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Notes 6 & 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = −16 Vdc, ID = −1.0 Adc,
VGS = −4.5 Vdc,
RG = 6.0 W)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = −16 Vdc, ID = −5.4 Adc,
VGS = −4.5 Vdc,
RG = 6.0 W)
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(VDS = −16 Vdc,
VGS = −4.5 Vdc,
ID = −5.4 Adc)
BODY−DRAIN DIODE RATINGS (Note 6)
Diode Forward On−Voltage
(IS = −5.4 Adc, VGS = 0 V)
(IS = −5.4 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = −5.4 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
5. Handling precautions to protect against electrostatic discharge is mandatory.
6. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qtot
Qgs
Qgd
VSD
trr
ta
tb
QRR
Min
−20
−
−
−
−
−
−
−0.65
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
−
−15
−
−
−0.2
−
−
−0.9
2.9
0.026
0.037
15
1375
510
200
18
25
70
55
22
70
65
90
20
4.0
7.0
−0.95
−0.72
40
20
20
0.03
Max Unit
−
−
−1.0
−10
−
−100
100
Vdc
mV/°C
mAdc
nAdc
nAdc
−1.25
−
0.033
0.048
−
Vdc
mV/°C
W
Mhos
1900
900
380
pF
35 ns
50
125
100
− ns
−
−
−
35 nC
−
−
−1.25
−
75
−
−
−
Vdc
ns
mC
http://onsemi.com
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NVMS5P02R2G | Power MOSFET ( Transistor ) | ON Semiconductor |
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