NTR1P02T1G PDF даташит
Спецификация NTR1P02T1G изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTR1P02T1G |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
5 Pages
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NTR1P02, NVR1P02
Power MOSFET
−20 V, −1 A, P−Channel SOT−23 Package
Features
• Ultra Low On−Resistance Provides Higher Efficiency
and Extends Battery Life
RDS(on) = 0.180 W, VGS = −10 V
RDS(on) = 0.280 W, VGS = −4.5 V
• Power Management in Portable and Battery−Powered Products
• Miniature SOT−23 Surface Mount Package Saves Board Space
• Mounting Information for SOT−23 Package Provided
• NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC−DC Converters
• Computers
• Printers
• PCMCIA Cards
• Cellular and Cordless Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp ≤ 1 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
−20
±20
−1.0
−2.67
400
− 55 to
150
V
V
A
mW
°C
Thermal Resistance; Junction−to−Ambient
RqJA
300 °C/W
Maximum Lead Temperature for Soldering
Purposes, (1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
−20 V
RDS(on) TYP
148 mW @ −10 V
ID MAX
−1.0 A
P−Channel
D
G
3
1
2
SOT−23
CASE 318
STYLE 21
S
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
P2 G
G
1
Gate
2
Source
P2 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTR1P02T1G SOT−23 3000 / Tape & Reel
(Pb−Free)
NTR1P02T3G SOT−23 10000 / Tape & Reel
(Pb−Free)
NVR1P02T1G* SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 7
1
Publication Order Number:
NTR1P02T1/D
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NTR1P02, NVR1P02
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 V, ID = −10 mA)
(Positive Temperature Coefficient)
Zero Gate Voltage Drain Current
(VDS = −20 V, VGS = 0 V, TJ = 25°C)
(VDS = −20 V, VGS = 0 V, TJ = 150°C)
Gate−Body Leakage Current (VGS = ±20 V, VDS = 0 V)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = −250 mA)
(Negative Temperature Coefficient)
Static Drain−to−Source On−State Resistance
(VGS = −10 V, ID = −1.5 A)
(VGS = −4.5 V, ID = −0.75 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = −5 V, VGS = 0 V, f = 1.0 MHz)
Output Capacitance
(VDS = −5 V, VGS = 0 V, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = −5 V, VGS = 0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
(VDD = −15 V, ID = −1 A, VGS = −5 V, RG = 2.5 W)
Rise Time
(VDD = −15 V, ID = −1 A, VGS = −5 V, RG = 2.5 W)
Turn−Off Delay Time
(VDD = −15 V, ID = −1 A, VGS = −5 V, RG = 2.5 W)
Fall Time
(VDD = −15 V, ID = −1 A, VGS = −5 V, RG = 2.5 W)
Total Gate Charge
(VDS = −15 V, VGS = −5 V, ID = −0.8 A)
Gate−Source Charge
(VDS = −15 V, VGS = −5 V, ID = −0.8 A)
Gate−Drain Charge
(VDS = −15 V, VGS = −5 V, ID = −0.8 A)
BODY−DRAIN DIODE RATINGS (Note 1)
Diode Forward On−Voltage (Note 2)
(IS = −0.6 A, VGS = 0 V)
(IS = −0.6 A, VGS = 0 V, TJ = 150°C)
Reverse Recovery Time
(IS = −1 A, dIS/dt = 100 A/ms, VGS = 0 V)
Reverse Recovery Stored Charge
(IS = −1 A, dIS/dt = 100 A/ms, VGS = 0 V)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qtot
Qgs
Qgd
VSD
trr
ta
tb
QRR
Min Typ Max Unit
−20
32
V
mV/°C
mA
−1.0
−10
±100
nA
−1.1
−1.9
−4.0
0.148
0.235
−2.3
0.180
0.280
V
mV/°C
W
165 pF
110
35
7.0 ns
9.0
9.0
3.0
2.5 nC
0.75
1.0
−0.8
−0.6
13.5
10.5
3.0
0.008
−1.0
V
ns
mC
http://onsemi.com
2
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NTR1P02, NVR1P02
2.5
2.25
2 −4 V
1.75 −4.5 V
TJ = 25°C
−3.5 V
1.5
1.25
1
0.75 −3 V
0.5
0.25
0
0
VGS = −2.5 V
0.25 0.5 0.75 1 1.25 1.5 1.75
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
Figure 1. On−Region Characteristics
2
1.75
VDS ≥ −10 V
TJ = 25°C
1.5
1.25
1
0.75
0.5
TJ = 125°C
TJ = −40°C
0.25
0
1 1.5 2 2.5 3 3.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
4
0.45
0.4
0.35
0.3
VGS = −4.5 V
TJ = 150°C
0.25
0.2
0.15
TJ = 25°C
TJ = −40°C
0.1
0.05
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.275
0.25
VGS = −10 V
0.225
0.2
TJ = 150°C
0.175
0.15
0.125
TJ = 25°C
0.1
0.075
0.05
0.2
TJ = −40°C
0.4 0.6 0.8 1 1.2
−ID, DRAIN CURRENT (AMPS)
1.4
1.6
Figure 4. On−Resistance versus Drain Current
and Temperature
2.5
2
ID = −1.5 A
VGS = −10 V
1.5
1
0.5
1000
VGS = 0 V
100
10
TJ = 150°C
TJ = 125°C
0
−45 −20 5 30 55 80 105 130
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
155
1
1 3 5 7 9 11 13 15 17 19 21
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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Номер в каталоге | Описание | Производители |
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