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NTR1P02T1G PDF даташит

Спецификация NTR1P02T1G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTR1P02T1G
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTR1P02T1G Даташит, Описание, Даташиты
NTR1P02, NVR1P02
Power MOSFET
20 V, 1 A, PChannel SOT23 Package
Features
Ultra Low OnResistance Provides Higher Efficiency
and Extends Battery Life
RDS(on) = 0.180 W, VGS = 10 V
RDS(on) = 0.280 W, VGS = 4.5 V
Power Management in Portable and BatteryPowered Products
Miniature SOT23 Surface Mount Package Saves Board Space
Mounting Information for SOT23 Package Provided
NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable*
These Devices are PbFree and are RoHS Compliant
Applications
DCDC Converters
Computers
Printers
PCMCIA Cards
Cellular and Cordless Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current
Continuous @ TA = 25°C
Pulsed Drain Current (tp 1 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
20
±20
1.0
2.67
400
55 to
150
V
V
A
mW
°C
Thermal Resistance; JunctiontoAmbient
RqJA
300 °C/W
Maximum Lead Temperature for Soldering
Purposes, (1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
20 V
RDS(on) TYP
148 mW @ 10 V
ID MAX
1.0 A
PChannel
D
G
3
1
2
SOT23
CASE 318
STYLE 21
S
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
P2 G
G
1
Gate
2
Source
P2 = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTR1P02T1G SOT23 3000 / Tape & Reel
(PbFree)
NTR1P02T3G SOT23 10000 / Tape & Reel
(PbFree)
NVR1P02T1G* SOT23 3000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 Rev. 7
1
Publication Order Number:
NTR1P02T1/D









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NTR1P02T1G Даташит, Описание, Даташиты
NTR1P02, NVR1P02
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 V, ID = 10 mA)
(Positive Temperature Coefficient)
Zero Gate Voltage Drain Current
(VDS = 20 V, VGS = 0 V, TJ = 25°C)
(VDS = 20 V, VGS = 0 V, TJ = 150°C)
GateBody Leakage Current (VGS = ±20 V, VDS = 0 V)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mA)
(Negative Temperature Coefficient)
Static DraintoSource OnState Resistance
(VGS = 10 V, ID = 1.5 A)
(VGS = 4.5 V, ID = 0.75 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5 V, VGS = 0 V, f = 1.0 MHz)
Output Capacitance
(VDS = 5 V, VGS = 0 V, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 5 V, VGS = 0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 15 V, ID = 1 A, VGS = 5 V, RG = 2.5 W)
Rise Time
(VDD = 15 V, ID = 1 A, VGS = 5 V, RG = 2.5 W)
TurnOff Delay Time
(VDD = 15 V, ID = 1 A, VGS = 5 V, RG = 2.5 W)
Fall Time
(VDD = 15 V, ID = 1 A, VGS = 5 V, RG = 2.5 W)
Total Gate Charge
(VDS = 15 V, VGS = 5 V, ID = 0.8 A)
GateSource Charge
(VDS = 15 V, VGS = 5 V, ID = 0.8 A)
GateDrain Charge
(VDS = 15 V, VGS = 5 V, ID = 0.8 A)
BODYDRAIN DIODE RATINGS (Note 1)
Diode Forward OnVoltage (Note 2)
(IS = 0.6 A, VGS = 0 V)
(IS = 0.6 A, VGS = 0 V, TJ = 150°C)
Reverse Recovery Time
(IS = 1 A, dIS/dt = 100 A/ms, VGS = 0 V)
Reverse Recovery Stored Charge
(IS = 1 A, dIS/dt = 100 A/ms, VGS = 0 V)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qtot
Qgs
Qgd
VSD
trr
ta
tb
QRR
Min Typ Max Unit
20
32
V
mV/°C
mA
1.0
10
±100
nA
1.1
1.9
4.0
0.148
0.235
2.3
0.180
0.280
V
mV/°C
W
165 pF
110
35
7.0 ns
9.0
9.0
3.0
2.5 nC
0.75
1.0
0.8
0.6
13.5
10.5
3.0
0.008
1.0
V
ns
mC
http://onsemi.com
2









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NTR1P02T1G Даташит, Описание, Даташиты
NTR1P02, NVR1P02
2.5
2.25
2 4 V
1.75 4.5 V
TJ = 25°C
3.5 V
1.5
1.25
1
0.75 3 V
0.5
0.25
0
0
VGS = 2.5 V
0.25 0.5 0.75 1 1.25 1.5 1.75
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
2
Figure 1. OnRegion Characteristics
2
1.75
VDS 10 V
TJ = 25°C
1.5
1.25
1
0.75
0.5
TJ = 125°C
TJ = 40°C
0.25
0
1 1.5 2 2.5 3 3.5
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
4
0.45
0.4
0.35
0.3
VGS = 4.5 V
TJ = 150°C
0.25
0.2
0.15
TJ = 25°C
TJ = 40°C
0.1
0.05
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
0.275
0.25
VGS = 10 V
0.225
0.2
TJ = 150°C
0.175
0.15
0.125
TJ = 25°C
0.1
0.075
0.05
0.2
TJ = 40°C
0.4 0.6 0.8 1 1.2
ID, DRAIN CURRENT (AMPS)
1.4
1.6
Figure 4. OnResistance versus Drain Current
and Temperature
2.5
2
ID = 1.5 A
VGS = 10 V
1.5
1
0.5
1000
VGS = 0 V
100
10
TJ = 150°C
TJ = 125°C
0
45 20 5 30 55 80 105 130
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
155
1
1 3 5 7 9 11 13 15 17 19 21
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage Current
versus Voltage
http://onsemi.com
3










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