DataSheet26.com

NP32N055SHE PDF даташит

Спецификация NP32N055SHE изготовлена ​​​​«Renesas» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв NP32N055SHE
Описание N-CHANNEL POWER MOSFET
Производители Renesas
логотип Renesas логотип 

6 Pages
scroll

No Preview Available !

NP32N055SHE Даташит, Описание, Даташиты
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HHE, NP32N055IHE, NP32N055SHE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-Channel MOS Field Effect
Transistors designed for high current switching applications.
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on) = 25 mMAX. (VGS = 10 V, ID = 16 A)
Low Ciss : Ciss = 1100 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP32N055HHE
NP32N055IHE Note
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
NP32N055SHE
TO-252 (JEDEC) / MP-3ZK
Note Not for new design.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
Gate to Source Voltage
VGSS
±20
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±32
±100
Total Power Dissipation (TA = 25°C)
PT
1.2
Total Power Dissipation (TC = 25°C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
PT 66
IAS 26 / 21 / 7
EAS 6.7 / 44 / 49
Channel Temperature
Tch 175
Storage Temperature
Tstg –55 to + 175
V
V
A
A
W
W
A
mJ
°C
°C
(TO-251)
(TO-252)
Notes 1. PW 10 µ s, Duty Cycle 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
2.27 °C/W
125 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14155EJ4V0DS00 (4th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
1999, 2005









No Preview Available !

NP32N055SHE Даташит, Описание, Даташиты
NP32N055HHE, NP32N055IHE, NP32N055SHE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
VDS = 55 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
VDS = 10 V, ID = 16 A
VGS = 10 V, ID = 16 A
VDS = 25 V
VGS = 0 V
f = 1 MHz
VDD = 28 V, ID = 16 A
VGS = 10 V
RG = 1
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
VDD = 44 V
VGS = 10 V
ID = 32 A
IF = 32 A, VGS = 0 V
IF = 32 A, VGS = 0 V
di/dt = 100 A/µs
MIN.
2.0
6
TYP.
3.0
12
19
1100
180
95
16
11
29
10
21
6
8
1.0
40
57
MAX.
10
±10
4.0
25
1600
270
170
35
27
58
24
32
UNIT
µA
µA
V
S
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D14155EJ4V0DS









No Preview Available !

NP32N055SHE Даташит, Описание, Даташиты
NP32N055HHE, NP32N055IHE, NP32N055SHE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
100
10
R(aDSt(oVnG) SLi=m1it0edV)LiPmoitweIdeDrDD(DiCsCsip)ation
ID(pulse)
1 ms
PW
100 µs
=
10
µs
1
TC = 25˚C
Single Pulse
0.1
0.1 1
10
VDS - Drain to Source Voltage - V
100
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
60
50 49 mJ
44 mJ
40
30
IAS = 7 A
21 A
26 A
20
10 6.7 mJ
0
25 50 75 100 125 150 175
Starting Tch - Starting Channel Temperature - ˚C
1000
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Rth(ch-A) = 125 ˚C/W
10
Rth(ch-C) = 2.27 ˚C/W
1
0.1
0.01
10µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
TC = 25˚C
10 100 1000
Data Sheet D14155EJ4V0DS
3










Скачать PDF:

[ NP32N055SHE.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NP32N055SHEN-CHANNEL POWER MOSFETRenesas
Renesas

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск