PDF NTDV20P06L Data sheet ( Hoja de datos )

Número de pieza	NTDV20P06L
Descripción	Power MOSFET ( Transistor )
Fabricantes	ON Semiconductor
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No Preview Available ! NTD20P06L, NTDV20P06L Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK Features • Withstands High Energy in Avalanche and Commutation Modes • Low Gate Charge for Fast Switching • AEC Q101 Qualified − NTDV20P06L • These Devices are Pb−Free and are RoHS Compliant Applications • Bridge Circuits • Power Supplies, Power Motor Controls • DC−DC Conversion MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Continuous Non−Repetitive tp v10 ms Steady State TA = 25°C VDSS VGS VGSM ID −60 $20 $30 −15.5 V V A Power Dissipa- tion (Note 1) Steady State TA = 25°C PD 65 W Pulsed Drain Current tp = 10 ms IDM $50 A Operating Junction and Storage Temperature Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 V, VGS = 5 V, IPK = 15 A, L = 2.7 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TJ, TSTG EAS −55 to 175 304 °C mJ TL 260 °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Case (Drain) RqJC 2.3 °C/W Junction−to−Ambient – Steady State (Note 1) RqJA 80 Junction−to−Ambient – Steady State (Note 2) RqJA 110 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces) 2. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 in sq.) http://onsemi.com V(BR)DSS −60 V RDS(on) TYP 130 mW @ −5.0 V ID MAX (Note 1) −15.5 A P−Channel D G 4 12 3 DPAK CASE 369C STYLE 2 4 S MARKING DIAGRAMS 4 Drain 1 Gate 2 Drain 3 Source 4 Drain 1 23 IPAK/DPAK CASE 369D STYLE 2 12 3 Gate Drain Source 20P06L A Y WW G Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2011 August, 2011 − Rev. 6 1 Publication Order Number: NTD20P06L/D 1 page NTD20P06L, NTDV20P06L 1000 100 VGS = −15 V Single Pulse TC = 25°C 100 10 1 10 ms 1 0.1 0.1 RDS(on) Limit Thermal Limit Package Limit dc 1 10 100 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area 350 ID = −15 A 300 250 200 150 100 50 0 25 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 10 D = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 t, TIME (s) Figure 13. Thermal Response 0.1 1 ORDERING INFORMATION Device Package Shipping† NTD20P06LG NTD20P06LT4G NTDV20P06LT4G DPAK (Pb−Free) 75 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 5 Page

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