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NTF5P03 PDF даташит

Спецификация NTF5P03 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTF5P03
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTF5P03 Даташит, Описание, Даташиты
NTF5P03, NVF5P03
Power MOSFET
-5.2 A, -30 V
PChannel SOT223
Features
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature SOT223 Surface Mount Package
Avalanche Energy Specified
AECQ101 Qualified and PPAP Capable NVF5P03T3G
These Devices are PbFree and are RoHS Compliant
Applications
DCDC Converters
Power Management
Motor Controls
Inductive Loads
Replaces MMFT5P03HD
© Semiconductor Components Industries, LLC, 2013
August, 2013 Rev. 6
1
http://onsemi.com
5.2 AMPERES, 30 VOLTS
RDS(on) = 100 mW
S
G
D
PChannel MOSFET
4
12
3
SOT223
CASE 318E
STYLE 3
MARKING
DIAGRAM
& PIN
ASSIGNMENT
Drain
4
AYM
5P03 G
G
1 23
Gate Drain Source
A = Assembly Location
Y = Year
M = Date Code
5P03 = Specific Device Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTF5P03T3G
Package
SOT223
(PbFree)
Shipping
4000 / Tape &
Reel
NVF5P03T3G
SOT223
(PbFree)
4000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTF5P03T3/D









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NTF5P03 Даташит, Описание, Даташиты
NTF5P03, NVF5P03
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Negative sign for PChannel devices omitted for clarity
Rating
Symbol
Max
Unit
DraintoSource Voltage
DraintoGate Voltage (RGS = 1.0 MW)
GatetoSource Voltage Continuous
1 sq in
FR4 or G10 PCB
10 seconds
Thermal Resistance Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1)
Minimum
FR4 or G10 PCB
10 seconds
Thermal Resistance Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1)
VDSS
VDGR
VGS
RTHJA
PD
ID
ID
IDM
RTHJA
PD
ID
ID
IDM
30
30
± 20
40
3.13
25
5.2
4.1
26
80
1.56
12.5
3.7
2.9
19
V
V
V
°C/W
Watts
mW/°C
A
A
A
°C/W
Watts
mW/°C
A
A
A
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.5 mH, RG = 25 W)
EAS mJ
250
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Repetitive rating; pulse width limited by maximum junction temperature.
http://onsemi.com
2









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NTF5P03 Даташит, Описание, Даташиты
NTF5P03, NVF5P03
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Cpk 2.0) (Notes 2 and 4)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
Gate Threshold Voltage (Cpk 2.0) (Notes 2 and 4)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static DraintoSource OnResistance (Cpk 2.0) (Notes 2 and 4)
(VGS = 10 Vdc, ID = 5.2 Adc)
(VGS = 4.5 Vdc, ID = 2.6Adc)
RDS(on)
Forward Transconductance (Note 2)
(VDS = 15 Vdc, ID = 2.0 Adc)
DYNAMIC CHARACTERISTICS
gfs
Input Capacitance
Output Capacitance
(VDS = 25 Vdc, VGS = 0 V,
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3)
Ciss
Coss
Crss
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(VDD = 15 Vdc, ID = 4.0 Adc,
VGS = 10 Vdc,
RG = 6.0 W) (Note 2)
(VDD = 15 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0 W) (Note 2)
(VDS = 24 Vdc, ID = 4.0 Adc,
VGS = 10 Vdc) (Note 2)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
Reverse Recovery Time
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 4.0 Adc, VGS = 0 Vdc,
TJ = 125°C) (Note 2)
(IS = 4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 2)
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
3. Switching characteristics are independent of operating junction temperatures.
4. Reflects typical values.
Ť ŤCpk +
Max limit * Typ
3 SIGMA
VSD
trr
ta
tb
QRR
http://onsemi.com
3
Min Typ Max Unit
30
28
Vdc
mV/°C
mAdc
− − −1.0
− − −25
± 100
nAdc
Vdc
1.0 1.75 3.0
3.5 mV/°C
mW
76 100
107 150
2.0 3.9
Mhos
500 950
pF
153 440
58 140
10 24 ns
33 48
38 94
20 92
16 38 ns
45 110
23 60
24 80
15 38 nC
1.6
3.5
2.6
Vdc
1.1
1.5
− −0.89
34 ns
20
14
0.036
mC










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