NTF5P03 PDF даташит
Спецификация NTF5P03 изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTF5P03 |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
7 Pages
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NTF5P03, NVF5P03
Power MOSFET
-5.2 A, -30 V
P−Channel SOT−223
Features
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature SOT−223 Surface Mount Package
• Avalanche Energy Specified
• AEC−Q101 Qualified and PPAP Capable − NVF5P03T3G
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC−DC Converters
• Power Management
• Motor Controls
• Inductive Loads
• Replaces MMFT5P03HD
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 6
1
http://onsemi.com
−5.2 AMPERES, −30 VOLTS
RDS(on) = 100 mW
S
G
D
P−Channel MOSFET
4
12
3
SOT−223
CASE 318E
STYLE 3
MARKING
DIAGRAM
& PIN
ASSIGNMENT
Drain
4
AYM
5P03 G
G
1 23
Gate Drain Source
A = Assembly Location
Y = Year
M = Date Code
5P03 = Specific Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTF5P03T3G
Package
SOT−223
(Pb−Free)
Shipping†
4000 / Tape &
Reel
NVF5P03T3G
SOT−223
(Pb−Free)
4000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTF5P03T3/D
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NTF5P03, NVF5P03
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Negative sign for P−Channel devices omitted for clarity
Rating
Symbol
Max
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage − Continuous
1 sq in
FR−4 or G−10 PCB
10 seconds
Thermal Resistance − Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current − Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1)
Minimum
FR−4 or G−10 PCB
10 seconds
Thermal Resistance − Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current − Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1)
VDSS
VDGR
VGS
RTHJA
PD
ID
ID
IDM
RTHJA
PD
ID
ID
IDM
−30
−30
± 20
40
3.13
25
−5.2
−4.1
−26
80
1.56
12.5
−3.7
−2.9
−19
V
V
V
°C/W
Watts
mW/°C
A
A
A
°C/W
Watts
mW/°C
A
A
A
Operating and Storage Temperature Range
TJ, Tstg
− 55 to 150
°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C
(VDD = −30 Vdc, VGS = −10 Vdc, Peak IL = −12 Apk, L = 3.5 mH, RG = 25 W)
EAS mJ
250
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Repetitive rating; pulse width limited by maximum junction temperature.
http://onsemi.com
2
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NTF5P03, NVF5P03
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Cpk ≥ 2.0) (Notes 2 and 4)
(VGS = 0 Vdc, ID = −250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = −24 Vdc, VGS = 0 Vdc)
(VDS = −24 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
Gate Threshold Voltage (Cpk ≥ 2.0) (Notes 2 and 4)
(VDS = VGS, ID = −250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Cpk ≥ 2.0) (Notes 2 and 4)
(VGS = −10 Vdc, ID = −5.2 Adc)
(VGS = −4.5 Vdc, ID = −2.6Adc)
RDS(on)
Forward Transconductance (Note 2)
(VDS = −15 Vdc, ID = −2.0 Adc)
DYNAMIC CHARACTERISTICS
gfs
Input Capacitance
Output Capacitance
(VDS = −25 Vdc, VGS = 0 V,
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3)
Ciss
Coss
Crss
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(VDD = −15 Vdc, ID = −4.0 Adc,
VGS = −10 Vdc,
RG = 6.0 W) (Note 2)
(VDD = −15 Vdc, ID = −2.0 Adc,
VGS = −10 Vdc,
RG = 6.0 W) (Note 2)
(VDS = −24 Vdc, ID = −4.0 Adc,
VGS = −10 Vdc) (Note 2)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
Reverse Recovery Time
(IS = −4.0 Adc, VGS = 0 Vdc)
(IS = −4.0 Adc, VGS = 0 Vdc,
TJ = 125°C) (Note 2)
(IS = −4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 2)
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
3. Switching characteristics are independent of operating junction temperatures.
4. Reflects typical values.
Ť ŤCpk +
Max limit * Typ
3 SIGMA
VSD
trr
ta
tb
QRR
http://onsemi.com
3
Min Typ Max Unit
−30 −
− −28
Vdc
−
− mV/°C
mAdc
− − −1.0
− − −25
−
−
± 100
nAdc
Vdc
−1.0 −1.75 −3.0
− 3.5 − mV/°C
mW
− 76 100
107 150
2.0 3.9
− Mhos
−
500 950
pF
− 153 440
− 58 140
− 10 24 ns
− 33 48
− 38 94
− 20 92
− 16 38 ns
− 45 110
− 23 60
− 24 80
− 15 38 nC
− 1.6 −
− 3.5 −
− 2.6 −
Vdc
−
−1.1
−1.5
− −0.89 −
− 34 − ns
− 20 −
− 14 −
− 0.036 −
mC
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