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PDF NVF5P03T3G Data sheet ( Hoja de datos )
| Número de pieza | NVF5P03T3G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTF5P03, NVF5P03
Power MOSFET
-5.2 A, -30 V
P−Channel SOT−223
Features
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature SOT−223 Surface Mount Package
• Avalanche Energy Specified
• AEC−Q101 Qualified and PPAP Capable − NVF5P03T3G
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC−DC Converters
• Power Management
• Motor Controls
• Inductive Loads
• Replaces MMFT5P03HD
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 6
1
http://onsemi.com
−5.2 AMPERES, −30 VOLTS
RDS(on) = 100 mW
S
G
D
P−Channel MOSFET
4
12
3
SOT−223
CASE 318E
STYLE 3
MARKING
DIAGRAM
& PIN
ASSIGNMENT
Drain
4
AYM
5P03 G
G
1 23
Gate Drain Source
A = Assembly Location
Y = Year
M = Date Code
5P03 = Specific Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTF5P03T3G
Package
SOT−223
(Pb−Free)
Shipping†
4000 / Tape &
Reel
NVF5P03T3G
SOT−223
(Pb−Free)
4000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTF5P03T3/D
1 page  
NTF5P03, NVF5P03
1000
900
800
700
600
500
400
300
200
100
0
0
TYPICAL ELECTRICAL CHARACTERISTICS
TJ = 25°C
VGS = 0 V
12.5
−VDS
10
QT
25
20
Ciss
Coss
Crss
5 10 15 20 25
DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
7.5
5.0 Q1
2.5
Q2
−VGS
ID = −2 A
TJ = 25°C
15
10
5
30
0
0
10 20 30 40 50
0
60
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
1000
VDD = −15 V
ID = −4.0 A
VGS = −10 V
td(off)
4.00
3.50
3.00
2.50
VGS = 0 V
TJ = 25°C
tf 2.00
100 tr 1.50
1.00
10 td(on)
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
0.50
0.00
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus Current
250
ID = −6 A
200
dc
1
10 ms
1 ms
0.1 100 ms
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10 ms
10
100
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Mounted on 2”sq. FR4 board (1”sq. 2 oz. Cu 0.06” thick
single sided) with on die operating, 10 s max.
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
150
100
50
0
25 50 75 100 125
TJ, STARTING JUNCTION TEMPERATURE (°C)
150
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
http://onsemi.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NVF5P03T3G.PDF ] | |
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